Abstract: Apparatuses and methods for providing active an inactive clock signals are disclosed. An example apparatus includes an input clock buffer and a clock divider circuit. The input clock buffer includes a receiver circuit configured to receive first and second clock signals or first and second constant voltages. The receiver circuit is further configured to provide first and second output signals based on the complementary clock signals or the first and second constant voltages. The first and second clock signals are complementary and the second constant voltage is less than the first constant voltage. The clock divider circuit is configured to receive the first and second output signals and provide multiphase clock signals based on the first and second output signals from the input clock buffer.
Abstract: According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining section, and a notification processing section. The non-volatile memory includes a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines. The monitoring section monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines. The determining section determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section. The notification processing section notifies a life of the non-volatile memory in accordance with a determining result by the determining section.
Abstract: A memory device includes a memory cell array having a plurality of memory cell groups with a corresponding plurality of independent channels, and the device and an operating method thereof perform an internal data processing operation for the memory cell groups. The memory device includes an internal command generator configured to generate one or more internal commands in order to perform an internal data processing operation in response to a reception of a command, and an internal common bus for a common internal processing channel which is disposed to be shared by the plurality of memory cell groups and configured to form a transmission path of data between the plurality of memory cell groups when the internal data processing operation is performed.
Abstract: Systems, apparatuses and methods may provide for technology that reads a lower page, one or more intermediate pages and a last page from a set of multi-level non-volatile memory (NVM) cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is substantially similar to an intermediate read time associated with the one or more intermediate pages.
Abstract: The present disclosure includes apparatuses and methods for bank to bank data transfer. An example apparatus includes a plurality of banks of memory cells, an internal bus configured to transfer data between the plurality of banks and an external bus interface, and a bank-to-bank transfer bus configured to transfer data between the plurality of banks.
Abstract: A semiconductor memory device includes a memory structure including a first integrated circuit chip and a plurality of second integrated circuit chips stacked on each other, the first integrated circuit chip is interposed between a pair of the plurality of second integrated circuit chips, an interface unit disposed on the first integrated circuit chip, the memory structure is connected to a third circuit through the interface unit, and the interface unit transfers operation signals to the first integrated circuit chip and the plurality of second integrated circuit chips, at least one inter-chip interconnector connected with the interface unit and the first integrated circuit chip and the plurality of second integrated circuit chips, and an external interconnector connected with the interface unit and the third circuit.
September 1, 2017
Date of Patent:
March 12, 2019
SAMSUNG ELECTRONICS CO., LTD.
Jong-Wan Kim, Sung-Chul Park, Won-Il Bae
Abstract: A memory system includes a memory device, a command clock (CK_t clock) that provides a first clock signal at a first frequency, and a data path clock (WCK_t clock) that provides a second clock signal at a second frequency different than the first frequency. Data path circuitry is synchronized with the WCK_t clock and provides an error detection code (EDC) hold pattern during an idle state. EDC hold pattern synchronization logic synchronizes a start of transmission of the EDC hold pattern synchronous to the CK_t clock.
Abstract: A memory device that checks an error of a memory cell and a memory module including the same are disclosed. The memory module includes a first memory device and a second memory device. The first memory device includes a first area in which normal data are stored, and a second area in which error check data are stored. The second memory device stores reliability information about the normal data that is stored in the first area of the first memory device. The first memory device outputs a result of comparing the normal data read from the first area of the first memory device to the error check data read from the second area of the first memory device.
Abstract: Apparatuses for memory repair for a memory device are described. An example apparatus includes: a non-volatile storage element that stores information; a storage latch circuit coupled to the non-volatile storage element and stores latch information; and a control circuit that, in a first repair mode, receives first repair address information, provides the first repair address information to the non-volatile storage element, and further transmits the first repair address information from the non-volatile storage element to the storage latch circuit. The control circuit, in a second repair mode, receives second repair address information and provides the second repair address information to the storage latch circuit and disables storing the second address information into the non-volatile storage element.
Abstract: Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.
Abstract: According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.
Abstract: A memory arrangement and method to arrange memories are disclosed. The memory arrangement comprises at least two memory chips (M1, M2) arranged on a Printed Circuit Board, PCB. A first memory chip (M1) is arranged on a first surface of the PCB, a second memory chip (M2) is arranged on a second surface of the PCB. The second memory chip (M2) is placed back to back to the first memory chip (M1) and oriented such that respective pins having the same function on the first memory chip (M1) and the second memory chip (M2) are placed opposite to each other and connected by vias to respective signal traces arranged between the first and second surfaces of the PCB.
Abstract: There is provided, for example, a write assist circuit for controlling the voltage level of a memory cell power supply line coupled to an SRAM memory cell to be written in the write operation. The write assist circuit reduces the voltage level of the memory cell power supply line to a predetermined voltage level, in response to a write assist enable signal that is enabled in the write operation. At the same time, the write assist circuit controls the reduction speed of the voltage level of the memory cell power supply line, according to the pulse width of a write assist pulse signal. The pulse width of the write assist pulse signal is defined in such a way that the greater the number of rows (or the longer the length of the memory cell power supply line), the greater the pulse width.
Abstract: Methods and devices for gating an internal data strobe from an input buffer of a memory device. The gating function occurs after a write operation ceases but before an external controller stops driving an external data strobe that is used to generate the internal data strobe. The methods and devices use local counters to count how many pulses have occurred on the data strobe during a write operation. When the local counters indicate that an expected number of cycles for the write operation have elapsed, the local counters indicate that the write operation has completed. This indication causes gating circuitry to cut off the internal data strobe from writing circuitry.
Abstract: A memory module for reporting information about a fail in chip units, an operation of a memory module, and an operation of a memory controller are provided. The memory module includes: first to Mth memory chips (where M is an integer that is equal to or greater than 2) mounted on a module board and storing data, and an (M+1)th memory chip mounted on the module board and storing a parity code for recovering data of a memory chip in which a fail in chip units occurs among the first to Mth memory chips, wherein fail bits are generated from the first to (M+1)th memory chips through an intra-chip error detection operation, and fail information is output according to a result of calculating the fail bits from the first to (M+1)th memory chips.
Abstract: A data storage device includes a nonvolatile memory device including a memory region, the memory region including a plurality of memory units; and a controller suitable for monitoring an elapsed time and a write count of the memory region, and performing a wear leveling operation for at least one memory unit selected among the plurality of memory units depending on a monitoring result.
Abstract: Methods, systems, and apparatus that increase available memory or storage using active boundary areas in quilt architecture are described. A memory array may include memory cells overlying each portion of a substrate layer that includes certain types of support circuitry, such as decoders and sense amplifiers. Active boundary portions, which may be elements of the memory array having a different configuration from other portions of the memory array, may be positioned on two sides of the memory array and may increase available data in a quilt architecture memory. The active boundary portions may include support components to access both memory cells of neighboring memory portions and memory cells overlying the active boundary portions. Address scrambling may produce a uniform increase in number of available data in conjunction with the active boundary portions.
Abstract: The present invention provides a memory cell. The memory cell includes a static random access memory (SRAM) cell located on a substrate. The SRAM cell includes a first storage node. At least one tunneling field-effect transistor (TFET), the gate of the tunneling field-effect transistor is electrically connected to the first storage node of the SRAM cell. A read bit line (RBL) electrically connected the drain of the TFET. A read terminal which is connected to a read port voltage (Vrp) and electrically connects to a source of the TFET.
Abstract: A semiconductor device may be provided. The semiconductor device may include a latch control signal generation circuit configured to compare a count signal counted according to the number of times that a command is inputted to the latch control signal generation circuit with a random signal having a random combination to generate a latch control signal which is enabled, based on an update signal. The semiconductor device may include a storage circuit configured to latch an address to generate a latched address, based on the latch control signal. The semiconductor device may include an internal circuit configured to receive the latched address to execute an internal operation.
Abstract: A memory device includes a memory cell array including a plurality of memory cells; a counting circuit configured to obtain a counting result by performing a counting operation on data read from the plurality of memory cells; and a control logic configured to perform a data restoring operation based on the counting result without involvement of a memory controller.
December 20, 2016
Date of Patent:
December 11, 2018
SAMSUNG ELECTRONICS CO., LTD.
Hye-jin Yim, Seung-jae Lee, Il-han Park, Kang-bin Lee