Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Abstract: A magnet assembly for magnetron sputtering includes a base pole member defining a plane and formed of magnetically permeable material. A center primary magnet is positioned on the base pole member and has its north-south magnetic orientation extending substantially perpendicular to the plane of the base pole member. An outer primary magnet is positioned on the pole member and has a north-south magnetic orientation extending substantially perpendicular to the plane of the base pole member and in a direction opposite to the magnetic orientation of the center primary magnet. A center secondary magnet is positioned between the center primary magnet and the outer primary magnet and has a north-south magnetic orientation extending substantially perpendicular to the plane of the base pole member and in a direction opposite to the magnetic orientation of the center primary magnet.

Abstract: A new technique is provided using only one coating material (pure silicon) to deposit thin films in a high vacuum, and using an ion source with a working gas (or gases) to control the refractive index of the thin film. This new technique can deposit different kinds of optical thin films with different refractive indices or gradient-indices and make different kinds of multilayer interference filters without opening the vacuum chamber during the process. The way of evaporation or sputtering of the coating material or target uses “electron beam evaporation”, “DC or RF magnetron sputtering”, or “ion beam sputtering”, etc. The way of controlling the refractive index of the film involves mixing Ar with O2 and N2 or just the mixture of N2 or O2, and feeding the gases into the ion source, as shown in FIG. 1 and FIG. 2. The amount of gas and the way of feeding are controlled by computer software.

Abstract: There may be used a film-forming apparatus having a substrate 4 that is rotatable around the center of one rotating axis 10 in the vertical direction situated in an inner cylinder 12, and a plurality (four in FIG. 2) of target units each comprising the pair of targets 2A, 2B (2B is under 2A serially arranged in the vertical direction inside an outer cylinder 13 opposite the surface 4a of the substrate 4, which are arranged in parallel in the circumferential direction of the inner wall of the outer cylinder 13. By employing a method whereby voltage is applied while alternatively reversing the polarity to each of the targets 2A, 2B, it is possible to form a coating on the surface of a substrate by glow discharge sputtering, to accomplish destaticizing while the sputtering can be carried out using a small in-line or bell jar apparatus with small space.

Abstract: A magnetron including a target (2) for sputtering onto a substrate in described. The magnetron comprises a magnetic field generator (4) for generating a closed loop magnetic field adapted to generate a plasma race-track above the target (2) and a driving device for establishing relative substantially translational movement between the race-track and the target (2) and adapted to influence the magnetic field generated by the magnetic field generator (4) at least during part of the relative substantially translational movement, the distance between any point on the race track and the momentarily closest part of the one or more pieces (50) of ferromagnetic material varying in accordance with the relative substantially translational movement of the race-track and the target (2).

Abstract: Within a method for forming a metal-silicon layer there is first provided a reactor chamber. There is then positioned within the reactor chamber a substrate spaced from a metal source target. There is also provided within the reactor chamber a minimum of a sputter material and a reactive silicon material. There is then sputtered the metal source target positioned within the reactor chamber with the sputter material provided within the reactor chamber in the presence of the reactive silicon material provided within the reactor chamber to form a metal-silicon layer over the substrate. The method is particularly useful for forming metal silicate layers, metal silicon nitride layers and metal silicon oxynitride layers within microelectronic fabrications. An alternative method employs: (1) a silicon source target rather than a metal source target; and (2) a reactive metal material rather than a reactive silicon material.

Abstract: A system and method for controlling a deposition thickness distribution on a substrate includes a motor that rotates the substrate and at least one deposition thickness sensor that senses the deposition thickness on the rotating substrate at two or more radii. At least one actuator varies a shadow of a mask that is disposed over the rotating substrate, wherein the shadow has a surface area that is less than an unmasked surface area of the rotating substrate. A vapor source deposits material on the rotating substrate. A process controller is coupled to the thickness deposition sensor and the at least one actuator. In response to an output of the deposition thickness sensor, the process controller varies the shadow of the mask along a radius of the substrate to control the deposition thickness distribution.

Abstract: The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.

Abstract: The invention relates to a vapor deposition coating apparatus. More particularly it relates to an apparatus in which the ion current density is carefully controlled to improve coating. This control enhances the versatility and enlarges the range of deposition conditions which can be achieved within a single apparatus, so that coatings with very different properties can be deposited in the same equipment. The vapor deposition apparatus includes a vacuum chamber, at least one coating means or ionization source disposed at or about the periphery of a coating zone, one or more internal magnetic means positioned such that the magnetic field lines are generated across the coating zone and means for altering the strength or position of the magnetic field lines to aid confinement.

Abstract: An arrangement of magnets and stacks of magnets has been developed for use in magnetron sputtering devices. The arrangement may include commercially available or easily manufactured magnets. The arrangement may also include magnetic shunts to tune the magnetic field. The arrangements may be potted to provide protection from the environment, and may be incorporated into a system for cooling the magnets and target. When used in a magnetron sputtering device, the arrangement provides a magnetic field that results in nearly uniform sputtering over most of the target area. Further, the magnet arrangement provides target utilization values that are significantly higher than those provided by prior art magnet systems. Thus, the present invention also provides a method of arranging magnets for optimal performance and a method for improving target utilization.

Abstract: PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.

Abstract: Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.

Abstract: A cathode arc source apparatus for depositing a coating on a substrate is provided with a monitor for monitoring the cathode arc source. The monitor is useful for monitoring position of an arc spot on the target, plasma emission by the source, or current through or potential difference at a secondary anode. A controller can take actions such as shutting down the source, varying the power or restriking the arc in response to output from the monitor.

Abstract: A semiconductor device having a semiconductor element, characterized in that said semiconductor device comprises a stacked body obtained by providing a laminate comprising said semiconductor element and a sealing resin which are interposed between a front surface member and a back face member, evacuating said laminate at a vacuum of 5 Torr or less for 5 to 40 minutes, subjecting the laminate thus treated to thermocompression bonding at a vacuum degree of 5 Torr or less, and cooling the laminate subjected to said thermocompression bonding so as to engage in contact bonding. The laminated semiconductor device is free of the air bubbles therein.

Abstract: A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700° C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400° C. and 1000° C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.

Abstract: A ferromagnetic magnetron target contains a pattern of blind holes with a circular cross-section distributed along a sputtering surface thereof. A process produces the target for a given magnetron source with a given tunnel field and includes determining and storing the tunnel field course when individual blind holes are provided in a new target surface, additively superimposing the determined tunnel field course of plural individual blind holes, comparing the resulting tunnel field course with a DESIRED tunnel field course; and changing, as a function of the comparison result, the relative parameter position of one or more of the individual blind holes, or the like to control the working of blind holes into the plane target sputtering surface.

Abstract: A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material.

Abstract: A fuel cell battery having an electrolyte, and a moving anode having anode material deposited on two sides of an electrically conductive substrate, which can be either a rotating anode disk, or a linearly moving anode, sandwiched between two air electrodes wherein the air electrodes each have at least one recharging portion and at least one discharging portion. The recharging portion of the air electrode is designed for optimum recharging and the discharging portion of the air electrode is designed for optimum discharging such that the fuel cell battery performs to its maximum ability. The recharging air electrode area can be larger than the discharging air electrode area for faster recharge times. The recharging air electrode can be operated at lower current densities to prevent anode densification, anode shape change and dendrite growth. Discharging the anode material on both sides of the anode increases the depth of the discharge and increases the battery's capacity.

Abstract: Hydrogen generation and fuel cell operation are integrated through the use of a low-cost hydrogen generation zone which comprises a pre-reforming zone, a partial oxidation zone, a reforming zone, and a water gas shift zone. Anode waste gas from the fuel cell is burned to provide heat to pre-reform the feed to the hydrogen generation zone while the burner exit temperature and the reforming zone exit temperatures are controlled to eliminate thermal cycling in the hydrogenation zone. This simplified control of the hot side temperatures in the hydrogen generation zone below about 700° C. combined with use of the pre-reforming zone, surprisingly permits the use of carbon steel and/or stainless steel for construction of the hydrogenation zone while providing an efficient system which does not require external fuel and offers a high degree of feedstock flexibility at low cost.