Abstract: A thin film forming apparatus is formed of a vacuum chamber, a partition for separating the vacuum chamber, two ECR plasma generating devices provided on both sides of the vacuum chamber. A base plate is situated in the partition, and targets are disposed on both sides of the base plate in the vacuum chamber. ECR plasma is formed on both side surfaces of the base place in the vacuum chamber, and ions are caused to collide against the targets to thereby spring out atoms and to form thin films on both side surfaces of the base plate through sputtering.

Abstract: A photovoltaic cell comprising a substrate, an n-layer, an i-layer, and a p-layer, wherein the p-layer comprises a first p-layer including micro-crystals adjacent to the i-layer and a second, amorphous p-layer stacked on the first p-layer. A photovoltaic cell is provided in which carrier injection from the upper electrode into the p-layer can be suppressed to obtain a high open circuit voltage.

Abstract: A long distance sputtering apparatus is provided in which a target and a substrate are disposed so as to oppose each other in a vacuum vessel provided with an exhaust system, wherein the target and substrate are separated by a distance of 150 mm or more. The long distance sputtering apparatus includes a gas-introducing tube, a cylindrical shield, and an exhaust hole. The gas-introducing tube introduces gas from a location closer to the target than halfway between the target and the substrate. The shield is disposed so as to surround the space between the target and the substrate. The exhaust hole is formed closer to the substrate than the gas-introducing tube. The pressure distribution of the sputtering gas between the target and the substrate is characterized by a higher pressure toward the target and a lower pressure toward the substrate.

Abstract: A film-forming method and apparatus for forming a deposited film on a substrate employing plasma generated by a raw material gas for film formation in a film-forming chamber involves several steps. The method includes arranging a deposition preventive member in the film-forming chamber so that the deposition preventive member prevents a film from being deposited on an inner wall of the chamber during film formation. A heater and a cooler are alternately arranged on a face of the deposition preventive member. Prior to commencing film deposition, the deposition preventive member is heated using the heater. During film formation, the deposition preventive member is cooled by the cooler to prevent the deposition preventive member from releasing contaminants.

Abstract: A photosensitive resin composition comprising a polymeric binder, an ethylenically unsaturated monomer and a photopolymerization initiator is disclosed. Also, a PS plate using the same is disclosed. The photopolymerization initiator comprises at least one compound selected from specific triazine compounds having a bromine atom on the substituted phenyl nucleus thereof and specific trihalomethyl-containing triazine compounds. The composition has high photosensitivity sufficient for exposure with an argon laser light and satisfactory developability. Additionally disclosed is a photosensitive resin composition comprising a polymeric binder, a monomer having an ethylenically unsaturated double bond and photopolymerization initiators including an acridine compound and a specific triazine compound. This second photosensitive resin composition has high sensitivity, high resolution and a wide development margin.

Abstract: A thermal head producing method in which dispersion of resistance values of heating resistors in each thermal head and dispersion of the resistance values of the heating resistors per dot unit are made uniform to improve printing quality. A glaze layer is formed on a substrate and a heating resistor composed of a thin film resistor material of a mixed composition of a high melting point metal and an insulating material is formed on the glaze layer. First and second pattern conductors for providing common and separate electrodes are formed on the heating resistor and, after a protective film is formed to cover the first and second pattern conductors and the heating resistor, the heating resistor is heated so as to be a higher temperature than a dot temperature required for a printing operation.

Abstract: An uncured thermosetting composition which is capable of curing upon exposure to actinic radiation is disclosed. The composition includes an acetal diepoxide of the formula: ##STR1## wherein R and R' are individually an aliphatic epoxy, or a cycloaliphatic epoxy; R.sub.1 and R.sub.4 are individually an alkyl, substituted alkyl, aryl, aryl alkyl; and R.sub.2 and R.sub.3 are individually hydrogen, alkyl, alkoxy, substituted alkyl aryl, alkyl aryl, and cyclic alkyl; as well as a photoinitiator, and an inorganic filler. The composition of the invention may also include a second epoxy functional resin, a flexibilizer, and other adjuvants. Other aspects of the invention include the cured resin encapsulant and a method of recovering the resin from a circuit assembly.

Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: An internally cooled target assembly for use in a magnetron sputtering apparatus is provided. The internally cooled target assembly includes a cooling plate that is configured to promote highly turbulent coolant flow through the target assembly to achieve efficient and uniform target cooling. The volume of coolant required to cool the target assembly is minimized.

Abstract: Disclosed are waterborne, stable photoresist compositions and methods of their preparation and use. The compositions are characterized by increased shear and storage stability. The photoresist composition comprises an aqueous emulsion of a 22% or less neutralized carboxylated resin and non-ionic surfactant containing poly(ethylene-oxide) segments, photopolymerizable monomer and photoinitiator. Neutralization is accomplished using either an organic or an inorganic base or mixtures thereof. The photoresist compositions are useful to selectively coat and protect surfaces subjected to corrosive environments, e.g., etchant processes, in the production of circuit traces for electronic circuit boards.

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering.

Abstract: A method of manufacturing semiconductor devices that provides excellent controllability and workability in planarizing the isolation area. The novel method comprises the steps of: forming a filling material on a semiconductor substrate formed with a plurality of trenches such that the plurality of trenches are filled up with the filling material; forming a mask having a pattern obtained by inverting a pattern of the plurality of trenches onto the surface of the filling material; etching the filling material to a predetermined depth by use of the mask to leave a protruding portion composed of the filling material on each of the plurality of trenches; and removing the mask and then the protruding portion for planarization.

Abstract: The effectiveness of various types of optical proximity correction schemes for avoiding line shortening are easily evaluated by imprinting a test pattern on a semiconductor wafer. The pattern includes an easily measurable standard measurement element not susceptible to line shortening and a test element having a series of parallel lines with narrow widths comparable to the widths of the circuit features that are susceptible to line shortening. The test element also includes the same optical proximity correction scheme whose effectiveness is to be measured. The entire test pattern is photolithographed onto the wafer and the lengths of measurement element and the test element are measured and compared to determine the effectiveness of the correction. Several test patterns, each with a different form of optical proximity correction, can be lithographed onto a single wafer for a comparative review of the different correction schemes both in focus and out of focus both positively and negatively.

Abstract: A phase-shifting photomask blank is made by sputtering a target of molybdenum suicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.

Abstract: A method for forming a gap-filled, planarization structure of dielectric materials on a substrate topography useful for forming microelectronic devices. A dielectric material is first deposited as continuous, dry dielectric layer, preferably a SOG layer. Then the dielectric layer is partially removed by chemical-mechanical polishing (CMP). The chemical and mechanical properties of the structure can be chosen by varying the composition of the SOG layer and the subsequent CMP conditions.

Abstract: A method and an apparatus for endpoint determination when milling an integrated circuit disposed in a substrate. In one embodiment, the substrate is charged to a first polarity while the well regions and active diffusion regions of the integrated circuit are charged to another polarity thus resulting in an electrical bias at the P-N junctions in the substrate. By powering up the integrated circuit in this fashion during milling, endpoint detection can be accurately determined by using a voltage contrast mechanism such as the imaging detector of a focused ion beam (FIB) milling tool. A diffusion boundary can also be determined in accordance with the teachings of the invention by the use of the stage current monitor of the FIB milling tool.

Abstract: A magnetoresistive film having a spin valve multi-layer structure has low electrical resistance and high sensitivity. In the magnetoresistive film, an under-layer, a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer are laminated on a substrate in this order. The magnetization direction of the second ferromagnetic layer is fixed by the antiferromagnetic layer, and the magnetization direction of the first ferromagnetic layer is not fixed. The average grain size of the first ferromagnetic layer ranges from 8 to 14 nm.

Abstract: The invention provides a silicon carbide sputtering target comprising non-stoichiometric silicon carbide, SiC.sub.x, where x is the molar ratio of carbon to silicon and x is greater than about 1.1 but less than about 1.45. The sputtering target of this invention is superior to sputtering targets prepared from presently available non-stoichiometric silicon carbide in that the DC magnetron sputtering rate using the new sputtering target is nearly an order of magnitude higher than the rate achievable with presently available targets. The invention also includes processes for making the new sputtering target and preparing superior silicon carbide films by sputtering the target.

Abstract: A direct drawing type lithographic printing plate precursor comprising a water-resistant support and an image receiving layer provided thereon, wherein a surface of the water-resistant support has the Bekk smoothness in the range of from 900 to 3,000 (second/10 cc) and the image receiving layer contains zinc oxide, a binder resin and a water-soluble organic compound having at least one acidic group selected from --CO.sub.2 H, --SO.sub.3 H and --PO.sub.3 H.sub.2, which is capable of forming a chelate compound with zinc oxide or a zinc ion. The direct drawing type lithographic printing plate precursor provides a lithographic printing plate which produces prints having a clear image without stains even when it is subjected to electrostatic transfer of a toner image formed by an electrophotographic copying machine.

Abstract: A direct drawing type lithographic printing plate precursor comprising a water-resistant support having provided thereon an image-receiving layer, wherein the image-receiving layer is formed by film coating a dispersion prepared by wet dispersion processing, with a dispersion medium of a nonaqueous solvent, a mixture comprising at least dry zinc oxide, a binder resin and an organic compound which is soluble in the dispersion medium and contains at least one acid group selected from the group consisting of --CO.sub.2 H, --SO.sub.3 H and --PO.sub.3 H.sub.2, adding a water-soluble low molecular weight organic compound containing at least two or more --PO.sub.3 H.sub.2 groups, which can form a chelate compound with a zinc ion, and further effecting wet dispersion processing.