Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam substrate processing and inspection tools. Hadamard targets can be written to a substrate using charged particle beams performing, for example, resist-based lithography or resist-less direct processing. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking.

Abstract: An image displaying system is provided, including an image device, first and second carrying devices. The image device receives an external image message. The first carrying device has an accommodating space. An imaging assembly is disposed at one end of the first carrying device while a virtual-image imaging assembly is disposed at the opposite end. The second carrying device has a storage space. The image device may attach to the accommodating space. When triggered, the image device transforms the external image message into a reversed image message and then projects the reversed image message to the imaging assembly. The virtual-image imaging assembly projects the reversed image message of the imaging assembly to produce a first image. The image device may attach to the storage space such that it projects the external image message to a target to produce a second image.

Abstract: The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam substrate processing and inspection tools. Hadamard targets can be written to a substrate using charged particle beams performing, for example, resist-based lithography or resist-less direct processing. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking.

Abstract: A sensor system configured to determine a position of a substrate having an edge. The sensor system includes a radiation source arranged to emit a radiation bundle, a reflective element, a detector device and a substrate table having a supporting surface for supporting the substrate. The supporting surface is at least partly along a plane. The radiation source and the detector device are arranged on a first side of the plane. The reflective element is arranged on a second side of the plane other than the first side. The reflective element is arranged to create a reflected bundle by reflecting the radiation bundle. The reflective element is arranged to illuminate the edge with the reflected bundle. The detector device is arranged to receive the reflected bundle.

Abstract: An apparatus for establishing a tilt angle of at least one mirror of a lithography installation is disclosed. The apparatus includes a pattern generating device (6) for generating a pattern. The apparatus also includes an image acquisition device for acquiring the generated pattern which was reflected by the mirror. The apparatus further includes a comparator device for providing a comparison result in a manner dependent on a comparison of the acquired pattern with a reference pattern. In addition, the apparatus includes an evaluation device for establishing the tilt angle in a manner dependent on the comparison result. The image acquisition device and the comparator device are provided in the same integrated circuit.

Abstract: A light source apparatus according to the present invention includes a phosphor wheel having a phosphor disposed in an annular shape on a disk-shaped base material, the phosphor serving to emit fluorescent light from excitation light, thereby forming an excitation light source having a predetermined color, and the phosphor having a discontinuous portion in a part of the annular shape, an excitation light source for emitting the excitation light with which a passage position of the circular phosphor is irradiated with respect to the phosphor wheel to be rotatively driven by the wheel motor, and a controller that controls light emission of the light source and the excitation light source synchronously with a position of the discontinuous portion with respect to an irradiation position of the excitation light.

Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

Abstract: Disclosed is an integral intelligent desktop device comprising: a desktop portion; a display unit connected with the desktop portions with a surface of the desktop portion forming a desktop of the integral intelligent desktop device with a surface of the display unit together; a projection unit performing a projection display of displayed content of the display unit; a process unit electrically connected with the display unit and the projection unit, wherein the projection unit is built in the display unit, and the display unit is movable and/or rotatable relative to the desktop portion.

Abstract: A scanning beam display system includes an optical module, an image control module, and a display screen on which optical beams are scanned. The optical module includes a vertical adjuster placed in the optical paths of the beams to control and adjust positions of the optical beams along a generally vertical direction on the display screen, and a control unit configured to receive control instructions for the vertical adjuster and to control the vertical adjuster to be at one of a predetermined number of orientations to place the scanning optical beams at a corresponding distinct position on the display screen. The control unit is further configured to apply an adjustment offset to each orientation of the vertical adjuster such that each immediately vertically adjacent pair of beam footprints projected on the display screen resulting from the plurality of positions have a vertical overlap that is larger than a first threshold.

Abstract: A method for image processing comprising providing an opening for entrance of light; the light being capable of being formed into an image; providing at least one optical element in an optical train configured to focus light; providing a variable aperture operatively associated with the at least one optical element; the variable aperture being placed in the optical train at an image plane and comprising mask settings for shielding portions of the light; providing an imager; providing at least one processor operatively connected to the variable aperture and imager; the at least one processor configured to control the passage of the light through the variable aperture; selectively masking portions of light using the mask settings of the variable aperture; obtaining image results using the settings; comparing image results obtained by the mask settings, and determining the phase correction that provides the optimal image results.

Abstract: A lighting device (100) and a projection device, comprising a light source for generating a blue excitation light (110), a base board (130), and a wavelength conversion material layer (140) covered on the base board (130). The wavelength conversion material layer (140) absorbs a part of the blue excitation light and emits an excited light. The color coordinate of the excited light is within the pre-configured color area, so that a mixed light combined by the excited light and the remaining blue excitation light not absorbed by the wavelength conversion material layer (140) exits the wavelength conversion material layer (140). The color coordinate of the mixed light is closer to the pre-set blue light color coordinate than the color coordinate of the blue excitation light.

Abstract: A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

Abstract: Disclosed is an apparatus and method for performing a measurement operation on a substrate in accordance with one or more substrate alignment models. The one or more substrate alignment models are selected from a plurality of candidate substrate alignment models. The apparatus, which may be a lithographic apparatus, includes an external interface which enables selection of the substrate alignment model(s) and/or alteration of the substrate alignment model(s) prior to the measurement operation.

Abstract: An apparatus for correcting the shape of a reticle, including: suckers; a sucker mounting frame; and a pneumatic control system, wherein the sucker mounting frame is disposed above a reticle stage, the suckers are mounted on a bottom of the sucker mounting frame in a manner of being spaced apart from one another; and the pneumatic control system is configured to control the suckers to retain the reticle by suction or to release the reticle. The suckers are so arranged that they do not block trapezoidal exposure fields of view on the reticle, thereby allowing a light beam to be fully (100%) incident on the reticle, which results in improved exposure efficiency. The apparatus is mounted separately from a photolithography tool by which it is employed, enabling a lower weight load on the reticle. Additionally, the apparatus is not in contact with any component disposed in the photolithography tool and will not introduce additional external vibration to the tool.

Abstract: A support device configured to support a first part relative to a second part, minimizing the transfer of vibration between the two parts, includes a supporting system configured to use gas under pressure to provide a support force between the first and second parts; a gas chamber connected to the supporting system and configured to contain the gas under pressure and provide the gas under pressure to the supporting system; and a section of acoustic damping material, arranged at a location within the gas chamber so as to separate a first gas containing region and a second gas containing region within the gas chamber, wherein the section of acoustic damping material has a first side and a second side, wherein the first gas containing region is on the first side and the second gas containing region is on the second side.

Abstract: A cooling apparatus for cooling a light source unit is provided. The cooling apparatus includes a cooling unit provided outside a path of light from the light source unit, and a heat pipe configured to connect a heat generating portion of the light source unit and the cooling unit. The heat pipe also serves as an electrode wire of the light source unit.

Abstract: Disclosed is a method of measuring overlay between upper and lower layers on a substrate using metrology targets formed by a lithographic process. The lithographic process is of a multiple-patterning type whereby first and second distinct populations of structures are formed in a single one of said layers (L1) by respective first and second patterning steps. The metrology target (620) in the single one of said layers comprises a set of structures of which different subsets (642A, 642B) are formed in said first and second patterning steps. An overlay measurement on this target can be used to calculate a combined (average) overlay performance parameter for both of the first and second patterning steps.

Abstract: An illumination system for EUV projection lithography has a beam shaping optical unit for generating an EUV collective output beam from an EUV raw beam of a synchrotron-radiation-based light source. An output coupling optical unit serves for generating a plurality of EUV individual output beams from the EUV collective output beam. In each case a beam guiding optical unit serves for guiding the respective EUV individual output beam toward an object field in which a lithography mask is arrangable. The result is an illumination system with which EUV light of a synchrotron-radiation-based light source is guided to the greatest possible extent without losses and at the same time flexibly.

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.