Abstract: A method for correcting an exposure pattern on a substrate includes obtaining, based on the exposure pattern, displacement adjustment parameters for adjusting displacements of a worktable supporting the substrate in each of a first direction and a second direction, a rotation angle adjustment parameter for adjusting a rotation angle of the worktable in a rotation direction, and a gap adjustment parameter for adjusting a gap between the worktable and a mask plate. The first direction and the second direction are perpendicular to each other in a horizontal plane. The rotation direction is a direction in which the worktable rotates around a central axis of a base table supporting the mask plate. The method further includes moving the worktable based on the displacement adjustment parameters, the rotation angle adjustment parameter and the gap adjustment parameter.

Abstract: An exposure apparatus exposes a substrate with illumination light via an optical system. A stage disposed below the optical system has a holder to hold the substrate. A carrier system disposed above the stage has a first support member that supports the substrate in a noncontact manner from a surface side of the substrate, which is irradiated with the illumination light. A second support member different from the first support member supports the substrate in a contact manner from a rear surface side. A drive system coupled to the first and the second support members moves at least the second support member so that relative movement between the first and the second support members and relative movement between the second support member and the holder are performed at least in a vertical direction. The second support member carries the substrate from the first support member to the holder.

Abstract: Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes.

Abstract: An extreme ultraviolet lithography (EUVL) system for patterning a semiconductor wafer includes an extreme ultraviolet (EUV) mask. The EUV mask includes first and second states, and further includes a polygon region and an open-spacing region. The polygon region includes a plurality of main polygons separated by a plurality of first fields. The open-spacing region is located outside the polygon region, and includes a plurality of sub-resolution polygon and second fields, and does not include any main polygons. The system also includes a nearly on-axis illumination (ONI) to expose the EUV mask and optics to direct diffracted lights reflected from the EUV mask towards the semiconductor wafer.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The planarization layer is of substantially uniform thickness and/or its outer surface has a peak to valley distance of less than 10 ?m. The planarization layer may be formed by applying two solutions of different concentration. A surface treatment may be applied to the burls to repel a solution of the planarization layer material.

Abstract: A substrate table to support a substrate on a substrate supporting area, the substrate table having a heat transfer fluid channel at least under the substrate supporting area, and a plurality of heaters and/or coolers to thermally control the heat transfer fluid in the channel at a location under the substrate supporting area.

Abstract: A liquid immersion member is used in a liquid immersion exposure apparatus which exposes a substrate via liquid by exposure light, and forms a liquid immersion space above an object which is movable below the optical member. The liquid immersion member includes a first member that is disposed at at least a portion of surrounding of the optical member, and a second member that is disposed at at least a portion of surrounding of an optical path of the exposure light, that includes a second upper surface which is opposite to the first lower surface of the first member via a gap, a second lower surface which is capable of being opposite to the object, and a fluid recovery part which is disposed at at least a portion of surrounding of the second lower surface, and that is relatively movable with respect to the first member.

Abstract: An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform which maintains the ability to correct non-uniform image patterns using time-shifted exposures of the substrate. The application exposes subsequent portions of a substrate to electromagnetic radiation at variable and alternating pulse frequencies using a time delay in order to correct interference patterns and increase exposure uniformity.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: An illumination device comprises a light source that includes a solid-state light source whose peak wavelength is set in the red wavelength band, a light source that includes a solid-state light source whose peak wavelength is set in the green wavelength band, a light source that includes a solid-state light source whose peak wavelength is set in the blue wavelength band, and a color synthesis optical element that combines P-polarized colored light incident from one light source and S-polarized colored light incident from the other two light sources. One light source includes at least one solid-state light source whose peak wavelength is set in the wavelength band of the color corresponding to one of the other light sources.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Abstract: A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface (10a), a mirror substrate (11) and a reflection layer stack (12) configured to reflect electromagnetic radiation that is incident on the optically effective surface. A metallic diffusion barrier layer (13) is arranged on that side of the reflection layer stack which faces toward the optically effective surface, and a stabilization layer (14) is arranged on the side of the diffusion barrier layer that faces toward the optically effective surface (10a). The stabilization layer reduces deformation of the diffusion barrier layer compared to an analogous structure without such a stabilization layer upon irradiation of the optically effective surface with electromagnetic radiation. The stabilization layer has a porosity, a relative density of which is no more than 80%, where the relative density is defined as the ratio between geometric density and true density.

Abstract: A substrate stage is used in a lithographic apparatus. The substrate stage includes a substrate table constructed to hold a substrate and a positioning device for in use positioning the substrate table relative to a projection system of the lithographic apparatus. The positioning device includes a first positioning member mounted to the substrate table and a second positioning member co-operating with the first positioning member to position the substrate table. The second positioning member is mounted to a support structure. The substrate stage further comprises an actuator that is arranged to exert a vertical force on a bottom surface of the substrate table at a substantially fixed horizontal position relative to the support structure.

Abstract: A projection display apparatus includes an image projecting unit projecting an image, an operation unit as an operation device whose output value changes depending on the amount of operation, a correction amount setting unit changing a keystone correction amount in accordance with an output value of the operation unit, and a keystone correcting unit performing keystone correction on an image to be projected in accordance with the keystone correction amount. A zero reference position in which the keystone correction amount is zero is set in an operation range of the operation unit. The correction amount setting unit sets a dead zone in the operation range such that the dead zone includes the zero reference position and an area surrounding this position, and sets the keystone correction amount to zero in accordance with the output value corresponding to the inside of the dead zone.

Abstract: A radiation driven light source comprises laser and focusing optics. These produce a beam of radiation focused on a plasma forming zone within a first container containing a gas (e.g. Xe). Collection optics collects photons emitted by a plasma maintained by the laser radiation to form a beam of output radiation. First container is enclosed within a hermetically sealed second container. Any ozone generated within the second container as a result of ultraviolet components of the output radiation is completely contained within the second container. Second container further filters out the ultraviolet components. Microwave radiation may be used instead of laser radiation to form the plasma.

Abstract: An illumination system has illumination optics which guide EUV illumination light collected by a collector to an object field. The illumination optics have a field facet mirror and a pupil facet mirror. Pupil facets are part of transfer optics which image the field facets in a manner superposed on one another into the object field. The collector images a radiation source region into an intermediate focal region disposed downstream thereof. The latter constitutes the first image of the radiation source region in the beam path disposed downstream thereof. A constriction region not coinciding with the downstream focal region is situated between the collector and a first component of the illumination optics.

Abstract: A flow through Micro-Electromechanical Systems (MEMS) package and methods of operating a MEMS packaged using the same are provided. Generally, the package includes a cavity in which the MEMS is enclosed, an inlet through which a fluid is introduced to the cavity during operation of the MEMS and an outlet through which the fluid is removed during operation of the MEMS, wherein the package includes features that promote laminar flow of the fluid across the MEMS. The package and method are particularly useful in packaging spatial light modulators including a reflective surface and adapted to reflect and modulate a light beam incident thereon. Other embodiments are also provided.

Abstract: The disclosure relates to an optical device, in particular for microlithography. The optical device includes an optical module and a support structure that supports the optical module. The optical module includes an optical element and a holding device that holds the optical element. The holding device includes a deformation device having a plurality of active deformation units which contact the optical element and which are designed so as to impose a pre-defined deformation on the optical element. The optical module is fixed to the support structure in a replaceable manner.

Abstract: A mirror array having a total surface extending perpendicularly to a surface normal, comprises a multiplicity of mirror elements each having a reflection surface and at least one degree of freedom of displacement, wherein the totality of the mirror elements form a parqueting of a total reflection surface of the mirror array, and wherein the mirror array is embodied modularly as a tile element in such a way that the parqueting of the total reflection surface can be extended by a tiling of a plurality of such mirror arrays.

Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.