Abstract: A wavelet-analysis system and method for use in fabricating semiconductor device wafers, the system including a misregistration metrology tool operative to measure at least one measurement site on a wafer, thereby generating an output signal, and a wavelet-based analysis engine operative to generate at least one wavelet-transformed signal by applying at least one wavelet transformation to the output signal and generate a quality metric by analyzing the wavelet-transformed signal.

Abstract: A vibration attenuation structure includes: a detection component covering an outer surface of a pipe and configured to detect a vibration frequency of the pipe, and an attenuation component covering the outer surface of the pipe; wherein, the pipe being configured to transmit fluid, the detection component and the attenuation component are arranged in parallel along a direction parallel to an axis of the pipe, and the attenuation component is capable of adjusting a vibration-absorbing frequency of the attenuation component according to the vibration frequency to attenuate vibration of the pipe.

Abstract: A fluid handling system for wetting a substrate irradiated by radiation. The fluid handling system include a first device to confine a first liquid to a first space between the first device and the substrate. The first device includes a first liquid supply member to provide the first liquid to the first space and an extraction member to remove liquid. The fluid handling system further includes a second device including a second liquid supply member to provide a second liquid to a second space between the second device and the substrate, wherein there is a gap on the surface of the substrate between the first and second liquids. The fluid handling system is configured to provide the second liquid to the second space without removing any liquid from the second space to form a liquid layer, and is configured to provide the first and second liquids on the substrate simultaneously.

Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Abstract: Disclosed is an illumination source comprising a gas delivery system comprising a gas nozzle. The gas nozzle comprises an opening in an exit plane of the gas nozzle. The gas delivery system is configured to provide a gas flow from the opening for generating an emitted radiation at an interaction region. The illumination source is configured to receive a pump radiation having a propagation direction and to provide the pump radiation in the gas flow. A geometry shape of the gas nozzle is adapted to shape a profile of the gas flow such that gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.

Abstract: A substrate processing apparatus includes: a holding unit that holds a substrate; a liquid discharge unit; a first supply unit; a second supply unit; and a control unit that controls each unit. The liquid discharge unit discharges a processing liquid to the substrate held by the holding unit. The first supply unit supplies the processing liquid to the liquid discharge unit. The second supply unit supplies steam to the liquid discharge unit. The second supply unit includes: a steam generator that generates steam; a supply line; a stabilizing mechanism; a pressure gauge that measures a pressure of the steam flowing through the supply line; and a pressure adjustment mechanism. The control unit controls the pressure adjustment mechanism so that the pressure of the steam measured by the pressure gauge becomes a preset pressure.

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

Abstract: A method includes shooting a primary droplet and a satellite droplet from a droplet generator along a common initial direction; applying a force to the primary droplet and the satellite droplet, wherein after applying the force, the primary droplet has a first deflection toward a first direction different than the common initial direction, and the satellite droplet has a second deflection toward a second direction different than the common initial direction, wherein the second deflection of the satellite droplet is greater than the first deflection of the primary droplet; and generating an extreme ultraviolet (EUV) light using an excitation laser hitting the primary droplet with the first deflection.

Abstract: An aligner includes a driving pulley connected to a motor, a toothed belt hung with respect to a driven pulley connected to a spindle, and a pulley detection sensor detecting the rotation position of the driven pulley. Each time the driving pulley rotates the driven pulley once, the misalignment in the direction of rotation of the driven pulley is detected and a correction value of the rotational misalignment of the driven pulley is calculated based on the driving and driven pulleys having a known rotation ratio. In a case where the rotation angle information of the driving motor is lost, detection data for calibration is created so that a correction value corresponding to the current phases of the driven pulley and the toothed belt after origin search is searched for.

Abstract: A laser focusing system (330) for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror (330.1) configured to receive a laser beam from a beam delivery system (320) and generate a first reflected laser beam (316); •—a second curved mirror (330.2) configured to receive the first reflected laser beam (316) and generate a second reflected laser beam (317), wherein the laser focusing system (330) is configured to focus the second reflected laser beam (317) to a target location (340) in a vessel (350) of the EUV radiation source (360).

Abstract: A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.

Abstract: A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.

Abstract: Provided is a hologram transcription apparatus including: an exposure part; and a light source part for irradiating light to the exposure part. Here, the exposure part includes a transfer unit for transferring a hologram film, and the exposure part is rotatable to change an angle formed with the light.

Abstract: A laser apparatus includes an output coupling mirror; a grating that constitutes an optical resonator together with the output coupling mirror; a laser chamber in an optical path of the optical resonator; at least one prism in an optical path between the laser chamber and the grating; a rotary stage including an actuator that rotates the prism to change an incident angle of a laser beam from the laser chamber on the grating; a wavelength measuring unit that measures a central wavelength of the laser beam from the laser chamber through the output coupling mirror; an angle sensor that detects a rotation angle of the prism; a first control unit that controls the actuator at a first operation frequency; and a second control unit that controls the actuator at a second operation frequency.

Abstract: A reticle transport system having a magnetically levitated transportation stage is disclosed. Such a system may be suitable for use in vacuum environments, for example, ultra-clean vacuum environments. A magnetic levitated linear motor functions to propel the transportation stage in a linear direction along a defined axis of travel and to magnetically levitate the transportation stage.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a cleaning substrate provided with a coating made a selected material and configuration is pressed against the working surface so that the contaminant is transferred from the working surface to the coating.

Abstract: Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of drops of a target material through a plurality of nozzles, adjacent two of the plurality of nozzles having a distance less than a width of a first one of the adjacent two of the plurality of nozzles, wherein the plurality of drops are aggregated to an elongated droplet; generating a laser pulse to convert the elongated droplet into plasma that generates an extreme ultraviolet (EUV) radiation; exposing a semiconductor substrate to the EUV radiation.