Abstract: A photoelectric conversion apparatus includes a plurality of photoelectric conversion circuits configured to be arranged in a semiconductor layer having a first plane and a second plane. The plurality of photoelectric conversion circuits is individually isolated by an isolation structure. The semiconductor layer includes a plurality of trench portions arranged on the first plane of each of the photoelectric conversion circuits. The plurality of trench portions is configured of a first trench portion extending in a first direction as an in-plane direction of the first plane and a second trench portion extending in a second direction as an in-plane direction of the first plane intersecting with the first direction. A filler member and an airgap are arranged in an interior of a trench portion at a position where the first trench portion and the second trench portion intersect with each other.

Abstract: A supporting system for rotating shafts (3) which can be arranged inclined with respect to one another having a supporting pillar (2.1), a first rotating shaft (3.1) which is supported on the supporting pillar (2.1) by a first bearing assembly (5.1), and a second rotating shaft (3.2) which is supported on the supporting pillar (2.1) by a second bearing assembly (5.2), the first bearing assembly (5.1) and/or the second bearing assembly (5.2) having a spherical bearing (5.4) capable of rotating freely both about the corresponding rotating shaft (3, 3.1, 3.2) and out of the plane perpendicular to the rotating shaft (3), (3.1), (3.2).

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: A stacked cell and preparation method thereof. The stacked cell includes: a crystalline silicon cell; a conductive connecting layer located on a surface of the crystalline silicon cell; a first isolation layer extending from a surface of the conductive connecting layer facing away from the crystalline silicon cell to penetrate through the conductive connecting layer, and a perovskite cell located on the surface of the conductive connecting layer facing away from the crystalline silicon cell.

Abstract: The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite and a second layer that includes a perovskitoid, where the perovskite has a first crystalline structure defined by ABX3, the perovskitoid has a second crystalline structure defined by A?B2X6, where A is a first cation, B is a second cation, X is an anion, and A? is a third cation having either a 1+ charge or a 2+ charge.

Abstract: A thermoelectric module includes: a lower substrate; an upper substrate that is disposed above the lower substrate and faces the lower substrate; a plurality of p-type and n-type thermoelectric elements that are disposed between the lower substrate and the upper substrate; a first electrode that is disposed on an upper surface of the lower substrate and a lower surface of the upper substrate and forms a series circuit by alternately and sequentially connecting the p-type and n-type thermoelectric elements; and a second electrode that is provided on the lower substrate and connects a thermoelectric element at an end portion of the series circuit and a post. The post includes a post main body that is formed of titanium, and a titanium passive film that covers a side surface of the post main body.

Abstract: The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite.

Abstract: A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 m?cm2 and not more than 0.5 m?cm2.

Abstract: A thermoelectric device according to an embodiment of the present invention comprises: a fluid flow part including one surface and the other surface spaced apart from the one surface in a first direction; a first thermoelectric element arranged on one surface of the fluid flow part; and a second thermoelectric element arranged on the other surface of the fluid flow part. A first groove overlapping the first thermoelectric element in the first direction and a first hole not overlapping the first thermoelectric element in the first direction are arranged on one surface of the fluid flow part, wherein a depth of the first groove is less than a distance between the one surface and the other surface thereof, and the first hole penetrates from the one surface to the other surface thereof.

Abstract: An alginate hydrogel-based thin-film heat flux sensor for billet crystallizer includes an alginate hydrogel substrate. The alginate hydrogel substrate is configured in a U-shaped planar structure. The U-shaped planar structure includes a first side and a second side, and the first side is longer than the second side. An inner surface of the alginate hydrogel substrate is provided with a first film thermocouple and a second film thermocouple. The first film thermocouple is in crosslinking connection with the second film thermocouple.

Abstract: Provided is a tandem photovoltaic device comprising: a top cell, a bottom cell, and a first light-trapping structure, in stacking, wherein a band-gap width of the top cell is larger than that of the bottom cell; and at least one of a second light-trapping structure located on a side of a shading surface of the bottom cell and a third light-trapping structure located on a side of a phototropic surface of the top cell; the three light-trapping structures are selected from metal or semiconductor material, and localized surface plasmons generated by the three light-trapping structures correspond to different peaks of light-wave response; and the three light-trapping structures form microstructures on a first cross section, average sizes d1, d2 and d3 of projections of the microstructures and average distances w1, w2 and w3 between the microstructures have relationships: 2 ? ( w ? 1 w ? 2 ) 2 · d ? 2 d ? 1 ? 16 , and / or ? 2 ? ( w ? 3 w ? 1 ) 2 · d ? 1 d ? 3 ? 16.

Abstract: The photovoltaic module includes at least one cell string, including multiple solar cell sheets, and adjacent solar cell sheets in the multiple solar cell sheets are connected to each other by multiple welding strips. In some embodiments, the photovoltaic module further includes multiple welding strips, where each of the multiple welding strips is in electrical contact with a corresponding bus bar, each of the multiple welding strips includes multiple bending portions arranged continuously along a second direction. In addition, along the second direction, an orthographic projection of a central line of each of the multiple welding strips on a back surface of the solar cell sheet coincides with an orthographic projection of a central line of the corresponding bus bar and/or an orthographic projection of a central line of each of the multiple bonding pads on the corresponding bus bar on the back surface of the solar cell sheet.

Abstract: A solar cell module and a method for operating a solar cell module. The solar cell module includes a plurality of strings which are each formed from a plurality of solar cells connected to one another in a series circuit, wherein each string is connected to a bypass circuit assigned thereto. The solar cell module is also characterized in that the bypass circuit has a switching element and is configured to reduce an electrical current inside the string by switching the switching element when a return current occurs within the associated string.

Abstract: A thermoelectric conversion material according to the present disclosure includes Ge, Te, and Sb. The thermoelectric conversion material includes a first region and a second region. The content of Sb in the first region in terms of number density of atoms is higher than the content of Sb in the second region in terms of number density of atoms. The first region includes a dispersed phase.

Abstract: A first photodetector according to an embodiment of the present disclosure includes: a substrate having a first surface that serves as a light-receiving surface and a second surface opposed to the first surface, and including an uneven structure provided on the first surface and a light-receiving section that performs photoelectric conversion to generate electric charge corresponding to an amount of light reception for each pixel; a passivation film stacked on the first surface of the substrate; and a reflectance adjustment layer including a plurality of protrusions configuring the uneven structure and the passivation film embedded in a plurality of recesses configuring the uneven structure, and having a refractive index between the substrate and the passivation film.

Abstract: A thermoelectric conversion element (100) of the present invention includes a first electrode (105) which has one side joined to a first surface (101a) of an n-type semiconductor via an n-side junction layer (102), and the other side joined to a first surface (103a) of a p-type semiconductor via a p-side junction layer (104), and a second electrode (106) which is joined to each of a second surface (101b) of the n-type semiconductor and a second surface (103b) of the p-type semiconductor via the n-side junction layer (102) and the p-side junction layer (104). Each of the n-type semiconductor (101) and the p-type semiconductor (103) has a composition represented by Formulas (1) and (2) below, and the n-side junction layer (102) and the p-side junction layer (104) include Al. Mg2SiaSn1-a+A??(1) MgmSixSnyGez+B??(2).

Abstract: The present invention relates to the technical field of solar cells, and particularly relates to a perovskite/silicon heterojunction tandem solar cell and a preparation method thereof. The solar cell includes a silicon-based sub-cell and a perovskite sub-cell laminated on the silicon-based sub-cell, where intermediate layers or recombination junctions formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer are arranged between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, through the use of the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer as a carrier recombination junction, on the one hand, the preparation and equipment costs are greatly reduced, and on the other hand, the photocurrent density and conversion efficiency of the tandem cell can be improved.

Abstract: A method of fabricating an organic optoelectronic device comprises positioning a patterning layer over a substrate, etching the patterning layer using a photolithographic process to create an etched patterning layer, positioning a layer of an organic material over the etched patterning layer, and removing at least a portion of the etched patterning layer and at least a portion of the layer of the organic material to create a patterned organic layer over the substrate.

Abstract: A solar cell module comprises: two base plates each including a conductive layer on at least one side; and a plurality of submodules interposed between respective conductive layers of the two base plates. The plurality of submodules each include a plurality of cells connected to each other as a result of a conductive material electrically connecting the respective conductive layers of the two base plates. The two base plates each have a plurality of insulating grooves in a gap between the plurality of submodules. The plurality of insulating grooves of one of the two base plates and the plurality of insulating grooves of an other one of the two base plates define at least one insulating space that prevents short circuiting between adjacent submodules.