Abstract: A thermoelectric power generation module mounting substrate includes: a printed substrate having a heat transfer through-hole penetrating a first surface and a second surface opposite to the first surface, and being in contact with a housing on the second surface; and a thermoelectric power generation module mounted on the printed substrate in contact with the first surface.

Abstract: An energy harvesting electro-optic display is disclosed comprising a photovoltaic cell that converts part of the incident light to electric current or voltage, wherein the electric current or voltage is used for the operation of the electro-optic display upon the conversion or stored in a storage component to be used for the operation of the display.

Abstract: An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode and comprising an emission layer, wherein the compound is of Formula 1, as shown in the equation below:

Abstract: A thermoelectric generator includes: a heat-receiving plate having a heat-receiving surface configured to receive radiant heat; a thermoelectric generation module provided to a surface of the heat-receiving plate opposite from the heat-receiving surface and having an area smaller than an area of the heat-receiving plate; a cooling plate provided to a surface of the thermoelectric generation module opposite from a surface where the heat-receiving plate is provided; and a temperature equalizer provided to the heat-receiving plate and configured to equalize a temperature of the heat-receiving surface.

Abstract: In one embodiment, a method includes forming a plurality of thermocouples coupled in series by forming first metal segments comprising a first metal, each of the first metal segments having a L-shape. The method further includes forming a plurality of deep openings to expose a first contact region of each of the first metal segments, and forming a plurality of shallow openings to expose a second contact region of each of the first metal segments. The method further includes forming second metal segments comprising a second metal over the dielectric layer. The second metal is a different type of metal than the first metal. Each of the second metal segments contacts one of the first contact region of the first metal segments through one of the plurality of deep openings and contacts one of the second contact region of the first metal segments through one of the plurality of shallow openings. The plurality of thermocouples is formed within a building component.

Abstract: The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

Abstract: An all solid storage element laminate that has a plurality of all solid storage elements disposed in a matrix, and includes a plurality of element layers laminated in a thickness direction. The all solid storage elements of element layers adjacent to each other in a thickness direction are electrically connected to each other.

Abstract: Photovoltaic module comprising a plurality of multijunction photovoltaic cells, at least one of said multijunction photovoltaic cells comprising: a first photovoltaic sub-cell extending over a first predetermined area; a second photovoltaic sub-cell provided on said first photovoltaic sub-cell and in electrical connection therewith, said second photovoltaic sub-cell extending over a second predetermined area which is smaller than said first predetermined area so as to define at least one zone in which said first photovoltaic sub-cell is uncovered by said second photovoltaic sub-cell; an electrically-insulating layer situated upon said first photovoltaic sub-cell in at least a part of said zone; and an electrically-conductive layer situated upon at least part of said electrically-insulating layer and in electrical connection with a surface of said second photovoltaic sub-cell, wherein at least one of said multijunction photovoltaic cells is electrically connected to at least one other of said multijunction

Abstract: Discussed is a solar cell including a semiconductor substrate having an inclined part; first and second conductivity type regions formed at or on one surface of the semiconductor substrate; a first electrode connected to the first conductivity type region on the one surface of the semiconductor substrate; and a second electrode connected to the second conductivity type region on the one surface of the semiconductor substrate. At least one of the first and second electrodes includes a finger part including a plurality of inner finger parts extending in a first direction, and a plurality of outer finger parts extending in the first direction adjacent to an edge of the semiconductor substrate; and a connection part connecting at least some of the plurality of outer finger parts on one side of the semiconductor substrate adjacent to the inclined part.

Abstract: A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided bet

Abstract: A solar panel includes a plurality of photovoltaic cells embedded in a layer of encapsulant. A textured and/or colored layer is positioned on a back side of the layer of encapsulant. The textured and/or colored layer matches a color and/or texture of the plurality of photovoltaic cells. A top layer is positioned on a front side of the layer of encapsulant.

Abstract: This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.

Abstract: A solar battery unit (100) is provided that includes: a substrate (120); a solar battery (110) attached to a back face of the substrate (120); and a communications module (130) attached to the substrate (120). The communications module (130) includes an antenna (132) disposed so as not to overlap solar cells (115) in the solar battery (110) in a front view.

Abstract: A thermophotovoltaic generator incorporating a two-stage combustor for providing heat to a thermophotovoltaic cell. Combustor parts include a partial oxidation reactor, which functions catalytically to convert a hydrocarbon fuel and a first supply of an oxidant into a gaseous partial oxidation product; and further include downstream thereof, a deep oxidation reactor including a premixer plenum fluidly connected to a heat spreader comprising a porous matrix, such as a ceramic foam. Functionally, the deep oxidation reactor converts the gaseous partial oxidation product and a second supply of oxidant into complete combustion products. Heat produced by the two-stage combustor generates radiative energy from a photon emitter, which is directly converted to electricity in a photovoltaic diode cell.

Abstract: A solar module configured in a frame assembly with multi-configuration attachment member(s), which has locking and unlocking characteristics.

Abstract: A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.

Abstract: An energy storage module, particularly a solid state battery, an energy storage system, a vehicle and a method for measuring an electrical voltage on an energy storage module or on an energy storage system is based on two stacked and series-connected energy storage cells, each have an anode layer and a cathode layer. A contact, which is electrically connected to an anode layer located within the stack of a first energy storage cell and to a cathode layer located within the stack of a second energy storage cell, which is adjacent to the first energy storage cell, leads out of the stack such that at least one contact can be contacted from outside the stack.

Abstract: A thermoelectric power generation device including: a heating unit having a heat medium passage in which a heat medium flows; a cooling unit having a cooling liquid passage in which a cooling liquid flows; a thermoelectric element having the heating unit and the cooling unit so as to generate power by utilizing a temperature difference between a condensation temperature of the heat medium and a temperature of the cooling liquid; a power generation output detection unit configured to detect a power generation output of the thermoelectric element; a heat medium pressure detection unit configured to detect a pressure of the heat medium; a storage unit for storing, in advance, a relationship between a power generation output of the thermoelectric element and the pressure of the heat medium; and an abnormality detection unit configured to detect an abnormality taking place in the thermoelectric power generation device.

Abstract: A photoelectric conversion module includes a substrate, a photoelectric conversion element mounted on the substrate, and a connector mounted on the substrate, the connector including a terminal that is electrically coupled to the photoelectric conversion element, wherein the connector is configured such that coupling the connector to a connector of another photoelectric conversion module causes the photoelectric conversion element to be electrically coupled to a photoelectric conversion element of the another photoelectric conversion module.

Abstract: A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.