Abstract: The present disclosure relates to a shield cover for a radiation source machine and a security inspection apparatus. The shield cover for a radiation source machine comprises: a frame body provided with a receiving chamber for receiving the radiation source machine, an end opening and an ray exit through which rays are emitted out from the radiation source machine; an end cover disposed at the end opening of the frame body and provided with a sealed chamber communicating with the receiving chamber; and a connecting member disposed between the end cover and the frame body and provided with an opening for communicating the sealed chamber of the end cover with the receiving chamber of the frame body, and the end cover being movably connected to the frame body by the connecting member such that a distance of the end cover from the end opening of the frame body is adjustable.

Abstract: Infrared (IR) temperature measurement and stabilization systems, and methods related thereto are provided. One or more embodiments passively stabilizes temperatures of objects in proximity and within the path between an infrared (IR) sensor and target object. An overmolded sensor assembly may include an IR sensor, which may include a sensing element or IR element and a circuit or signal processor. The IR element may be thermally bonded with a frame or conductive top hat.

Abstract: A display device for a medical X-ray photography apparatus may include: a display panel including a photography mode selection region where a plurality of photography mode selection images corresponding to a plurality of X-ray photography modes are displayed; an interface that receives a selection operation to select one of the photography mode selection images displayed on the display panel; a processor that performs display processing of the selected photography mode selection image displayed on the display panel in response to the selection operation received through the interface; and an illustration display region included in the display panel where an illustration corresponding to the selected photography mode selection image is displayed. When the selection operation is received, the selected photography mode selection image is displayed in a visually distinguishable manner, and the illustration corresponding to the selected photography mode is displayed in the illustration display region.

Abstract: An optical sensing module including a lens and a sensing device is provided. The lens has an optical axis. The sensing device is disposed under the lens, wherein the sensing device is to receive an object beam passing the lens. The optical axis of the lens deviates from a geometric center of the sensing device. An optical sensing module including a prism film, a sensing device and a lens is further provided. The prism film has a plurality of prisms. The sensing device is disposed under the prism film, wherein the sensing device is to receive an object beam sequentially passing the prism film and the lens. The lens is disposed between the prism film and the sensing device.

Abstract: A semiconductor pixel unit for sensing near-infrared light, and for optionally simultaneously sensing visible light. The pixel unit comprises a single substrate with a first semiconductor region and a second semiconductor region electrically separated by an insulating region, for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field in the second region for facilitating transport of photoelectrons generated in the second region by near-infrared light passing through the first region and the insulating region.

Abstract: A radiographic imaging apparatus including a radiation detecting element that detects radiation with which a subject is irradiated and a casing that houses a battery, the casing being provided with a vent hole that circulates internal and external air, the radiographic imaging apparatus comprising: an air pressure measurer that measures an internal air pressure of the casing; a hardware processor that inspects, after the internal air pressure of the casing changes due to operation of pressure, waterproof performance of the radiographic imaging apparatus on a basis of a changing aspect of the internal air pressure due to termination of the operation of the pressure, and a flow rate regulator that reduces a flow rate of the air through the vent hole in a case where the battery is charged.

Abstract: A PET detecting device may include a plurality of detection modules and a processing engine. Each of the plurality of detection modules may include a scintillator array, one or more photoelectric converters, one or more energy information determination circuits and a time information determination circuit. The scintillator array may interact with a plurality of photons at respective interaction points to generate a plurality of optical signals. The one or more photoelectric converters may convert the plurality of optical signals to one or more electric signals that each include an energy signal and a time signal. The one or more energy information determination circuits may generate energy information based on the one or more energy signals. The time information determination circuit may generate time information based on the one or more time signals. The processing engine may generate an image based on the energy information and the time information.

Abstract: A dual-energy detector array for a radiation system is provided. The dual-energy detector array includes a circuit board assembly having a first side and a second side. A first conversion package is coupled to the first side of the circuit board assembly and has a first effective photon energy. A second conversion package is coupled to the second side of the circuit board assembly and has a second effective photon energy different than the first effective photon energy. A radiation filtering material is disposed within the circuit board assembly between the first conversion package and the second conversion package. The radiation filtering material attenuates at least some of the radiation photons impinging thereon.

Abstract: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

Abstract: In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.

Abstract: An X-ray image diagnostic apparatus according to an embodiment includes a photon counting X-ray detector, calibration circuitry, and image generating circuitry. The photon counting X-ray detector includes a plurality of detection elements each of which is configured to detect X-rays and output a detection signal. The calibration circuitry calibrates a detection signal of each of the detection elements using a correction value calculated from a plurality of signals output from the detection elements and corresponding to a plurality of X-ray application conditions relating to continuous X-rays. The image generating circuitry generates an image using the calibrated detection signals of the detection elements.

Abstract: A flow cytometer apparatus and methods for detecting and clearing a clog therein are disclosed. An example method for detecting a clog may include (i) detecting, via a fault detection system of a flow cytometer, a first plurality of events associated with a first aliquot from a first sample well, (ii) determining a count of the first plurality of events associated with the first aliquot, (iii) determining whether the count of the first plurality of events is below a minimum count tolerance and (iv) (a) if the count of the first plurality of events is below the minimum count tolerance, then determining that the flow cytometer has a clog, (b) if the count of the first plurality of events is equal to or above the minimum count tolerance, then detecting a second plurality of events associated with a second aliquot from a second sample well.

Abstract: A system adapted for characterizing gain chips and a method for characterizing gain chips are disclosed. The system includes a probe light source that generates an output light signal characterized by a wavelength that can be varied in response to a wavelength control signal and a mounting stage adapted for receiving a gain chip characterized by a waveguide having a reflective face on a first surface of the gain chip and a transparent face on a second surface of the gain chip. The system also includes an optical system that focuses the output light signal into the waveguide through the transparent face; and a controller that causes the probe light source to generate the output light signal and measures an intensity of light both with and without the gain chip being powered for each of a plurality of different wavelengths to form a gain profile for the gain chip.

Abstract: A method for quantifying radiation beam conformity includes: obtaining first information regarding a prescribed aperture; obtaining second information regarding an actual aperture defined by components of a collimator; and determining, using a processing unit, a metric based on the first information regarding the prescribed aperture and the second information regarding the actual aperture, wherein the metric indicates an amount of over-exposed aperture area, an amount of under-exposed aperture area, or both, and wherein the processing unit comprises one or more input for receiving the first and second information, and comprises a metric determination module configured to determine the metric based on the first information and the second information.

Abstract: The present invention provides a detector for medical diagnosis. The detector for diagnosis includes a photosensitive element, an X-beam stopping element, a supporting board, and a conductive liner. The photosensitive element is used for sensing an X-beam. The X-beam stopping element is used for stopping the X-beam from penetrating said photosensitive element. The supporting board is provided below the X-beam stopping element to be used for supporting said photosensitive element. The conductive liner is provided between said photosensitive element and said supporting board to fit with said photosensitive element.

Abstract: A photonic dosimeter accrues cumulative dose and includes: a substrate; a waveguide disposed on the substrate and that: receives a primary input light; transmits secondary input light from the primary input light to a dosimatrix; receives a secondary output light from the dosimatrix; and produces primary output light from the secondary output light; the dosimatrix disposed on the substrate and in optical communication with the waveguide and that: receives the secondary input light from the waveguide; produces the secondary output light that is communicated to the waveguide; and includes an active element that undergoes conversion from a prime state to a dosed state in response to receipt, by the active element, of a dose of radiation; and a cover layer disposed on waveguide and the dosimatrix.

Abstract: In accordance with at least one aspect of this disclosure, an ultraviolet radiation (UV) sensor includes a UV sensitive material and a first electrode and a second electrode connected in series through the UV sensitive material such that UV radiation can reach the UV sensitive material. The UV sensitive material can include at least one of zinc tin oxide, magnesium oxide, magnesium zinc oxide, or zinc oxide. The electrodes can be interdigitated comb electrodes.

Abstract: In an embodiment, a method for determining the concentration of an element of a heteroepitaxial layer includes generating a reciprocal space map in Qz and Qx directions in a portion of reciprocal space describing positions of diffracted X-ray peaks of a heteroepitaxial layer and of a substrate on which the heteroepitaxial layer is positioned, determining the position of a diffracted X-ray peak of the substrate in the reciprocal space map in the Qx direction, determining the expected position of the diffracted X-ray peak of the heteroepitaxial layer in the Qx direction based on the determined position of the diffracted X-ray peak of the substrate in the Qx direction, generating a scan of the heteroepitaxial layer in a Qz direction at the expected position in the Qx direction, and determining the concentration of a constituent element of the heteroepitaxial layer based on the scan.

Abstract: Calibration devices including germanium-68 source material are disclosed. The source material may be a matrix material (e.g., zeolite) in which germanium-68 is isomorphously substituted for central atoms in tetrahedra within the matrix material. Methods for preparing such calibration devices are also disclosed.

Abstract: Microbolometer is a class of infrared detector whose resistance changes with temperature change. In this work, we deposited and characterized Germanium Silicon Oxide thin films mixed with Sn (Ge—Si—Sn—O) for uncooled infrared detection. Ge—Si—Sn—O were deposited by co-sputtering of Sn and Ge—Si targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Si—Sn—O was most sensitive in the wavelength ranges between 2.5-3.7 ?m. The transmission data was further used to determine the optical energy band gap (0.22 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (6592305.87 m?1-11615736.95 m?1), refractive index (2.5-4.0), and the extinction coefficient (2.31-5.73) for the wavelength ranges between 2.5-5.5 ?m. The thin film's resistivity measured by the four-point probe was found to be 142.55 ?-cm and TCR was in the range of ?4.9-?3.1 (%/K) in the temperature range 289-325K.