Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Abstract: An apparatus for polishing leads of a semiconductor package includes a package holder unit on which a plurality of semiconductor packages are arranged; and a polishing member that automatically polished the leads of the semiconductor package on the package holder unit. A mask may be used to cover the plurality of semiconductor packages to expose at least a part of the leads to the polishing member.

Abstract: A wafer is supported while being rotated by four wafer rotating rods having grooves. The wafer rotating rods are rotated by a driving force transmitted from a motor installed outside a wafer processing bath. An ultrasonic bath is arranged below the wafer processing bath, and ultrasonic waves generated by an ultrasonic source are transmitted to the wafer processing bath. The ultrasonic waves are efficiently transmitted to the wafer because the wafer is supported only by the wafer rotating rods.

Abstract: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Abstract: A process for improving uniformity across the surface of a substrate during a plasma process such as plasma etching. A conductive plane is formed at the back surface of the substrate. A plasma process is then performed to the front surface of the substrate. The conductive plane may then be removed upon completion of the plasma process and before final processing steps.

Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.

Abstract: A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The focused particle beam system mills the second structural element without irradiating a first structural element. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. The shielding element separates the first structural element from the second structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element.

Abstract: This invention is a process and apparatus for producing single crystal, polycrystal or amorphous stand-alone films. The process has two steps: First, thin layers of the desired materials are deposited by VD onto a hot foreign single crystal substrate wafer held by a substrate platter in a pocket formed in such. The second step is to chemically etch away the substrate while still being held by the substrate platter while the film-substrate is still hot. The etch is stopped as soon as all of the foreign substrate is consumed. This leaves just the thin film which is then cooled down to room temperature. The bottom surface of this pocket has a plurality of channels for carrying an etching gas which is input by a central channel in the substrate platter. The reactants that form the stand-alone film are input through an actively cooled effusion cell having a plenum for receiving the reactant gas.

Abstract: The invention concerns a device for an etch treatment of a disk-like object, in particular a wafer, having a means for receiving the disk-like object without contact and at least two guiding elements disposed normally to the means and limiting the position of the disk-like object at its periphery.

Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

Abstract: A method for conditioning a plasma etch chamber is presented. A plasma etch chamber is provided, which preferably includes a chuck for supporting a topography. A conditioning process may be performed in the etch chamber. The conditioning process preferably includes positioning a cover topography on or above the chuck. A conditioning feed gas containing (hydro)halocarbons may be introduced into the chamber. A conditioning plasma may be generated from the conditioning feed gas for a conditioning time. Immediately after generating the conditioning plasma is complete, the overall thickness of the cover topography is preferably at least as great as immediately before generating the conditioning plasma. By performing a conditioning process in such a manner, the total cost and complexity of the conditioning process may be reduced.

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

Abstract: A vacuum plasma processor includes a coil for reactively exciting a plasma so plasma incident on a workpiece has substantially uniformity. The coil and a window which reactively couples fields from the coil to the plasma have approximately the same diameter. An r.f. source supplies a pulse amplitude modulated envelope including an r.f. carrier to the coil.

Abstract: A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

Abstract: An apparatus for depositing a film on a substrate utilizing a plasma-enhanced chemical vapor deposition process comprises a process chamber having an electrically grounded element therein and an RF biased electrode positioned in the process chamber proximate a substrate. An insulative element is coupled between the electrode and the grounded element other than the grounded substrates, and is formed of an electrically insulative material and has an insulative surface for effectively electrically isolating the electrode from the grounded element within the process chamber. The insulative element includes at least one feature formed in the insulative surface, wherein the feature has a high effective aspect ratio for inhibiting the deposition of a film therein to thereby create an electrical discontinuity in a film which may form on the insulative surface during the plasma-enhanced chemical vapor deposition process.

Abstract: An anti-airlock apparatus for filters comprises a process bath for processing wafers, a filtration unit incorporating a filter for preliminarily filtering a process solution before said processing and connected to a first deaeration line, and a tank body provided on the primary side or the filtration unit and connected to a second deaeration line, wherein at least said filtration unit and tank body are connected to each other via a pipeline, and a valve of the first deaeration line and a valve of the second deaeration line are separately operated and said first and second deaeration lines are directly connected to the most upstream side of the process solution.

Abstract: A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.

Abstract: The invention provides microwave plasma process apparatus and method in which an antenna having a tubular member curved in a circular shape and including at least one slit is disposed on a sealing member for sealing a chamber, so that microwaves can be emitted through the slit to the sealing member.

Abstract: Workpieces, such as, semiconductor wafers, are continuously manufactured by repetitively alternately switching a common radio frequency power source between a plurality of downstream or in-chamber processing reactors and actively processing one workpiece in a vacuum in an operating one of the processing chambers while simultaneously executing with a robot at atmospheric pressure the overhead tasks relative to next processing another workpiece in the other processing chamber. The active processing of the workpieces in alternate chambers does not overlap, and the robot starts and completes all of its preparatory tasks during the active processing step during the time when a chamber's door is closed thereby providing virtual zero overhead. System architecture allows eliminating all redundant components other than the dual chambers which operate in parallel. For a modest cost increase for the second chamber throughput is trebled and overall costs significantly reduced.