Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

Abstract: A film forming device in a substrate manufacturing apparatus a stage section on which a cassette storing a plurality of glass substrates is mounted. A treatment section for subjecting the substrate to a predetermined treatment is arranged to oppose the stage section. A washing section for washing the substrate is arranged near the stage section and the treatment section and deviated from a space between the stage section and the treatment section in a second direction crossing a first direction passing through the stage section and the treatment section. A transfer robot is arranged between the stage section and the treatment section. The transfer robot transfers the substrate between the stage section, treatment section, and washing section and loads the substrate, washed in the washing section, directly into the treatment section.

Abstract: A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed.

Abstract: An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low.

Abstract: A method of fabricating a semiconductor wafer having a polishing endpoint layer which is formed by implanting ions into the wafer includes the step of polishing the wafer in order to remove material from the wafer. The method also includes the step of detecting a first change in friction when material of the ion-implanted polishing endpoint layer begins to be removed during the polishing step. The method further includes the step of detecting a second change in friction when material of the ion-implanted polishing endpoint layer ceases to be removed during the polishing step. Moreover, the method includes the step of terminating the polishing step in response to detection of the second change in friction. An apparatus for polishing a semiconductor wafer down to an ion-implanted polishing endpoint layer in the wafer is also disclosed.

Abstract: A method of forming a leading edge taper in a selected area on the bearing surface of a disc head slider includes directing an etching beam toward the bearing surface, with a first portion of the selected area being shaded from the etching beam and a second portion of the selected area being unshaded from the etching beam. The areas of the first and second portions are varied over time to form the taper.

Abstract: An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method capable of effectively preventing film peeling generated in a reaction vessel to provide a deposited film of excellent quality with reduced spherical projections. The present invention provides a vacuum processing apparatus or method utilizing a vessel, means for supplying a gas into the vessel and means for supplying an electric power and in which the gas is decomposed by the electric power to generate a discharge, wherein the surface of a member confronted with the discharge satisfies the conditions of (1) the ten-point mean roughness Rz with respect to a reference length of 2.5 mm according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 200 &mgr;m, and (2) the mean spacing S of adjacent local peaks according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 100 &mgr;m.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.

Abstract: The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

Abstract: A system and method for cleaning very small spherical shaped semiconductor devices is disclosed. The system includes an enclosure for housing a pair of rollers. The enclosure also includes a fluid inlet for receiving a cleaning agent and a product inlet for receiving the spherical shaped semiconductor device. A motor rotates one or both of the rollers. In operation, the spherical shaped semiconductor device and the cleaning agent are provided into the enclosure. The device passes to the pair of rollers and is cleaned by the cleaning agent and the rotating rollers. Once cleaned, the spherical shaped device and cleaning agent pass into a separator and the device is fully cleaned.

Abstract: A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.

Abstract: Plasma P that is caused to fluctuate by a magnet 128 is generated inside a reaction chamber 102 of an etching apparatus 100. The signal of the fluctuating plasma light detected at a photosensor unit 136 via a detection window 134 is sampled over a constant sampling cycle with a arithmatic control unit 120 to obtain data strings. A plurality of hypothetical fluctuation cycles are hypothesized and the step for calculating the moving average values during the individual hypothetical fluctuation cycles using the data strings is repeated, then arithmetic processing is performed on the moving average values calculated for the individual repetition timings to create moving average value data for each of the hypothetical fluctuation cycles to ascertain approximate expressions corresponding to the individual hypothetical fluctuation cycles.

Abstract: A surface wave coupled plasma etching apparatus according to the present invention can produce a plasma within a confined area above an etching object by a microwave confinement plate, so as to prevent an upper portion of the apparatus from being sputtered by the plasma. The microwave confinement plate is interposed between a pair of glass plates, so that the microwave confinement plate is not exposed to and sputtered by the plasma during an etching process. The lower glass plate which protects the microwave confinement plate from the plasma is formed so as not to change a temperature of itself rapidly when the etching stops, and thereby an undesirable polymer adhesion to the lower glass plate is avoided.

Abstract: An apparatus for controlling temperature of a process chamber which includes a plurality of heating elements mounted juxtaposed to a cylindrical chamber sidewall of the process chamber for heating the chamber, and a plurality of thermal sensors with one mounted juxtaposed to each of the plurality of heating elements such that the temperature of the chamber cavity can be more uniformly controlled. The method may be carried out by first forming a substantially air-tight chamber cavity by a cylindrical chamber sidewall, a top enclosure and a bottom enclosure, and then positioning a plurality of heating elements juxtaposed to and surrounds the cylindrical chamber sidewall and then mounting a plurality of thermal sensors to the plurality of heating elements with one sensor juxtaposed to each heating element, and then controlling the temperature of the process chamber by inputting signals from the plurality of thermal sensors into a controller and then outputting signals to the plurality of heating elements.

Abstract: Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the cross-sectional dimensions parallel to the plate surface than the thickness of the dark space or plasma sheath. The openings of the plate are wider nearest the source of the electromagnetic energy in order to attenuate the electromagnetic fields and thereby prevent build up of deposits which would block the flow gas through the plate.

Abstract: A multilayer circuit board having strengthened air bridge crossover structures, and additive and subtractive methods for producing the same, wherein the circuit includes specially designed metallic fortifying layers to mechanically and/or electrically fortify the circuit. A preferred embodiment includes air bridge structures having generally T-shaped cross-sections, which provide strengthened, mechanically robust air bridges which are especially resistant to damage from flexure and displacement due to physical impact, bending, thermal excursions, and the like.

Abstract: An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.

Abstract: A novel plasma treatment system (200) including one or more novel computer codes. These codes provide a high density plasma for plasma immersion ion implantation applications.