Abstract: A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.

Abstract: A mask frame assembly for thin film deposition is disclosed. In one embodiment, the assembly includes: a frame, and a plurality of unit mask strips attached to the frame, wherein each of the unit mask strips includes a plurality of unit masking patterns which are spaced apart from each other. In one embodiment, each of the unit masking patterns includes: i) a plurality of stripe pattern slits and ii) a plurality of sets of dot pattern slits each set formed to be substantially parallel with the stripe pattern slits. Further, the stripe pattern slits and the sets of dot pattern slits are alternately formed with respect to each other, wherein each set of the dot pattern slits includes a plurality of dot pattern slits, and wherein the length of each stripe pattern slit is substantially the same as the length of each set of the dot pattern slits.

Abstract: Provided is an apparatus and a method of holding a device. The apparatus includes a wafer chuck having first and second holes that extend therethrough, and a pressure control structure that can independently and selectively vary a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure. The method includes providing a wafer chuck having first and second holes that extend therethrough, and independently and selectively varying a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure.

Abstract: A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma.

Abstract: A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

Abstract: A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

Abstract: The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. A contact region coating is disposed on the contact region of the exterior surface of the electrode. The contact region coating has an electrical conductivity of at least 9×106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.

Abstract: Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

Abstract: A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.

Abstract: Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

Abstract: A thermally conductive sheet is used between a mounting table for mounting thereon a target substrate and an annular focus ring mounted on the mounting table to surround a circumferential peripheral portion of the target substrate. Further, the mounting table includes therein a cooling unit and is disposed in a depressurized accommodating chamber for accommodating therein the target substrate. The thermally conductive sheet has a non-adhesive layer on each of one or more surfaces thereof.

Abstract: A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21.

Abstract: A lift pin driving device and a manufacturing apparatus having the device are provided. The device includes drive unit including a single drive motor that drives a pin plate, a plurality of timing belts and a plurality of pulleys. The pin plate, which supports a plurality of lift pins thereon, is moved by the pulleys, operated in conjunction with the motor through the timing belts. A tensioner controls a tension of the timing belts. The tensioner may be controlled to provide precise rectilinear movement without leaning, and to prevent the timing belts from sagging. The device efficiently controls the tension of the timing belts and allows the lift pins to be precisely moved upwards or downwards such that a substrate positioned thereon may maintain a horizontal position while being moved upwards or downwards.

Abstract: A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addttion, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam.

Abstract: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.