Abstract: To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.

Abstract: A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.

Abstract: An apparatus and a method for compensating uniformity of film thickness are provided. A shielding plate is provided between a vapor deposition object and a evaporation source. During the vapor deposition process, a shielding plate is continuously moved according to film deposition rates, so as to selectively pass or block atoms emitted from the evaporation source to achieve purpose of adjustably depositing.

Abstract: Provided is a mask which is used to form on the surface of a substrate a plurality of linear film members disposed in parallel to each other by fixing one surface of the mask to the substrate and supplying a film material through the other surface of the mask by the use of a vapor process. The mask includes: a mask body having a plurality of openings corresponding to patterns of the linear film members; and reinforcement ribs which are disposed to cross the openings and which have a function of preventing deformation of the mask body due to the weight thereof. Here, the reinforcement ribs are disposed close to the other surface of the mask in the thickness direction of the openings.

Abstract: An epitaxial apparatus, including a supporting member to support a substrate; an external wall provided to surround the supporting member from the sides; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.

Abstract: A holder for fabricating an organic light emitting display comprises: a holder main body; and a plurality of supporters provided on opposite sides of the holder main body; wherein each supporter has a ‘?’-shape and comprises a side wall having a predetermined height, and a supporting plate bent from the side wall. The supporting plate is formed with a plurality of stepped parts to support a substrate, a film tray and a mask, to hold the substrate, the film tray and the mask while the substrate, the film tray and the mask are being transported, and to prevent a pattern from being distorted, thereby transporting and processing a substrate, a film tray and a mask in a single chamber at the same time.

Abstract: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

Abstract: A system for of aligning a mask to a substrate comprising: a fixture for holding the mask and the substrate in fixed positions relative to each other; means for holding the substrate, the means for holding the substrate protruding through openings in a table and the fixture, the means for holding fixedly mounted on a stage, the stage moveable in first and second directions and rotatable about an axis relative to the table; means for affixing the fixture containing the mask and the substrate to the table; means for controlling the means for temporarily affixing so as to generate a uniform force around a perimeter of the fixture to effectuate the temporarily affixing; means for aligning the mask to the substrate, the means for aligning controlling movement of the stage in the first and second directions and rotation about the axis; and means for fastening the fixture together.

Abstract: A semiconductor processing apparatus includes: a reaction chamber; a susceptor disposed in the reaction chamber for placing a substrate thereon and having through-holes in an axial direction of the susceptor; lift pins slidably disposed in the respective through-holes for lifting the substrate over the susceptor; and a means for reducing contact resistance between the lift pins and the respective through-holes.