Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

Abstract: A manufacturing method that forms a multilayer thin film on the inner surface of a housing forming a transparent appearance of an electronic product to provide a deep metal texture and an electronic product having a metal texture provided at the inner surface of the housing. The multilayer thin film manufacturing method includes reforming an inner surface of a housing having an outer surface and the inner surface through plasma processing, depositing at least one hardness reinforcement layer on the inner surface, and depositing a color layer on the hardness reinforcement layer.

Abstract: The invention relates to a physical vapor deposition coating device (1), comprising a process chamber (2) with an anode (3) and a consumable cathode (4) to be consumed by an electrical discharge for coating a substrate located within the process chamber (2). The coating device (1) further includes a first electrical energy source (5) being connected with its negative pole to said consumable cathode (4), and a second electrical energy source (6) being connected with its positive pole to said anode (3). According to the invention, a third electrical energy source (7) is provided being connected with its negative pole to a source cathode (8) which is different from the consumable cathode (4). In addition, the invention relates to a physical vapor deposition method for coating a substrate.

Abstract: A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.

Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

Abstract: The present invention provides a method for manufacturing a glass substrate for a magnetic disk or the like according to which surface roughnesses of main surfaces of a glass substrate can be reduced more than with currently available methods. In the present invention, by mirror-polishing (final finishing-polishing) the main surfaces of the glass substrate used in a magnetic disk, for example, using a polishing liquid containing organic-based particles made of a styrene-based resin, an acrylic resin, or a urethane-based resin, as polishing abrasive particles, surface roughnesses of the main surfaces of the substrate can be reduced more than with currently available methods.

Abstract: [Problem] To provide a means for forming a thin-film in a desired part of an object to be treated. [Solution] The thin-film formation means according to the present invention is part of a thin-film formation method which supplies electricity to a raw-material gas in a reduced pressure container, converting the raw-material gas to plasma, and irradiates the plasma, thus forming a thin-film on the surface of an object to be treated. Therein, the effect of a magnetic field generated by a magnetic field generating means is used to form the thin-film in a desired part. The effect of the magnetic field focuses the flux of the plasma in a desired part of the surface of the object to be treated, thus enabling the thin-film to be formed in the desired part.

Abstract: A medical device with structure elements is made by providing a substrate; optionally depositing a layer of a sacrificial material on the substrate; and applying of a photoresist layer to the substrate. The layer of sacrificial material and structuring of the photoresist layer according to the shape of the structure elements are produced such that first free spaces are formed which are open on the side facing away from the substrate and are delimited by side faces of the photoresist layer. An angle is set between the side faces and the substrate. Sacrificial material is deposited in the first free spaces so first mask elements from sacrificial material are adapted to the inner contour of the first free spaces. The photoresist layer is removed so that second free spaces are formed between the first mask elements.

Abstract: A plastic substrate having a porous layer is disclosed. In an embodiment, the porous layer is formed at least partially from a material of the plastic substrate and has pores. The proportion by volume of pores is greater in a first region of the porous layer than in a second region of the porous layer. The second region follows the first region, as seen proceeding from the plastic substrate. The porous layer can be produced by a plasma process that simultaneously effects structuring of the plastic substrate by ion bombardment and coating of the plastic substrate.

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

Abstract: Certain example embodiments relate to coated articles with sequentially activated low-E coatings, and/or methods of making the same. In certain example embodiments, one or more infrared reflecting layers is/are activated via a non-equilibrium preconditioning activation that uses photons with specific frequencies/frequency ranges, followed by a more equilibrium thermal activation. The preconditioning activation aids in rearranging the silver atoms to energetically favorable positions, while helping to avoid their unwanted agglomeration. The more equilibrium thermal stage of activation aids in aligning the chemical potentials of the layers of the stack and in further densification of the preconditioned silver layer. Doing so, in turn, helps to reduce the likelihood of stresses building-up in the coating, the formation of point and dimensional defects, other unwanted efficiency-reducing phenomena, and/or the like.

Abstract: The invention relates to apparatus and a method for applying coatings to substrates such as, for example, a lens or electronic component. The apparatus includes a coating chamber in which there is provided one or more magnetrons which include, typically, an at least partially oxidized metal or metal alloy. A carrier is provided for the substrates to be moved and held in the coating chamber and the carrier is formed from a plurality of units on which the substrates are positioned and the units can be brought together to form the carrier.

Abstract: A deposition apparatus comprises a target unit, an anode unit into which electrons emitted from the target unit flow, a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit, a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit, a power supply unit configured to supply power to the target unit and the anode unit, and a control unit configured to control the striker driving unit and the power supply unit. The control unit supplies the power to the target unit and the anode unit after bringing the striker into contact with the target unit.

Abstract: Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

Abstract: A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. In order to uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is being demanded. An object of this invention is to provide a target capable of realizing the above, and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.

Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

Abstract: The present invention relates to a sputtering method using a sputtering device, wherein entire scan region is defined from one side to the other side of a sputtering target, and the sputtering target is scanned with a magnet moving back and forth along the entire scan region multiple times. The entire scan region of a sputtering target is divided by N parts to be uniformly eroded, such that a magnet moves back and forth along some part of the divided entire scan region. A sputtering method using a sputtering device can therefore extend an alternating cycle of a sputtering target, by virtue of improving utilization efficiency of the sputtering target through uniform erosion of the sputtering target, and can also reduce manufacturing cost.

Abstract: A main object of the present invention is to provide a method for producing a cathode active material for a solid state battery, which is capable of reducing resistance. The present invention solves the problem by providing a method for producing a cathode active material for a solid state battery comprising steps of: a coating step of coating a coating material represented by LixPOy (2?x?4, 3?y?5) on a surface of a cathode active material containing an Ni element and being an oxide by using a sputtering method; and a heat-treating step of forming a coating portion in such a manner that the cathode active material coated with the coating material is heat-treated within a range of 400° C. to 650° C. to diffuse the Ni element into the coating material.

Abstract: A method for coating substrates is provided. The method includes diamond turning a substrate to a surface roughness of between about 60 ? and about 100 ? RMS, wherein the substrate is one of a metal and a metal alloy. The method further includes polishing the diamond turned surface of the substrate to a surface roughness of between about 10 ? and about 25 ? to form a polished substrate, heating the polished substrate, and ion bombarding the substrate with an inert gas. The method includes depositing a coating including at least one metallic layer on the ion bombarded surface of the substrate using low pressure magnetron sputtering, and polishing the coating to form a finished surface having a surface roughness of less than about 25 ? RMS using a glycol based colloidal solution.

Abstract: To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.