Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.

Abstract: Mold chases for molding semiconductor devices and/or components of semiconductor devices, the resulting semiconductor devices and/or their components, and related systems and methods are disclosed herein. In some embodiments, the mold chase includes a first clamp and a second clamp having a substrate engaging surface oriented towards the first clamp. The substrate engaging surface can have a hybrid surface texture that includes a first region and a second region at adjacent the first region (on a lateral side of the first region). The first region can include a first surface texture that is relatively smooth. The second region can include a second surface texture that is relatively rough compared to the first surface texture. The first surface texture can prevent mold bleed during a molding process. The second surface texture can reduce electrostatic discharge events during an ejection from the mold chase.

Abstract: In certain embodiments, a method for designing a semiconductor device includes generating a 2D design for fabricating chiplets on a substrate. The chiplets are component levels for a multi-chip integrated circuit. The 2D design includes a first layout for alignment features and semiconductor structures to be formed on a first surface of a first chiplet and a second layout for alignment features and semiconductor structures to be formed on a first surface of a second chiplet. The first and second chiplets are adjacent on the substrate. The second layout is a mirror image of the first layout across a reference line shared by the first and second chiplets. The first surfaces of the first and second chiplets are both either top or bottom surfaces. The method further includes generating one or more photomasks according to the design.

Abstract: An electronic package structure includes an electronic structure, a wiring structure, an electrical contact and a support layer. The wiring structure is located over the electronic structure. The electrical contact connects the wiring structure and the electronic structure. The support layer is disposed around the electrical contact and has a surface facing the electrical contact. The surface includes at least one inflection point in a cross-sectional view.

Abstract: A method of forming a semiconductor package includes providing a metal baseplate having a base section and a plurality of metal posts, the base section being a planar pad of substantially uniform thickness, the plurality of metal posts each extending up from a planar upper surface of the base section, mounting a semiconductor die on the upper surface of the metal baseplate, forming an encapsulant body of electrically insulating mold compound on the upper surface of the base section, electrically connecting terminals of the semiconductor die to the metal posts, and removing the base section so as to form package contacts from the metal posts at a first surface of the encapsulant body.

Abstract: A semiconductor package includes a chip stack comprising semiconductor chips vertically stacked on a substrate in a first direction perpendicular to a top surface of the substrate, pillars between the substrate and the chip stack, an adhesive layer on a bottom surface of a lowermost semiconductor chip of the semiconductor chips, a first lower protective layer between the adhesive layer and the pillars, a second lower protective layer between the first lower protective layer and the adhesive layer, and a mold layer covering the chip stack and filling a space between the pillars. A thickness of the second lower protective layer in the first direction is greater than a thickness of the adhesive layer in the first direction.

Abstract: A component carrier which includes a laminated stack having at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, and a component having at least one electrically conductive connection structure and embedded in the stack, wherein the at least one electrically conductive connection structure of the component is exposed with respect to the stack so that a free exposed end of the at least one electrically conductive connection structure of the component is flush with or extends beyond an exterior main surface of the stack.

Abstract: A nitride-based semiconductor device including a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, and a gate structure. The gate structure includes at least one conductive layer and two or more doped nitride-based semiconductor layers. The at least one conductive layer includes metal, and is in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The two or more doped nitride-based semiconductor layers are in contact with the second nitride-based semiconductor layer and abut against the conductive layer, so as to form contact interfaces abutting against the metal-semiconductor junction with the second nitride-based semiconductor.

Abstract: A display panel, a display apparatus and a preparation method of a display panel. The display panel includes a substrate, a display region and a non-display region. The non-display region includes a hole region and an isolation region adjoining the display region and the hole region. The isolation region includes at least one second isolation structure at least partially surrounding the hole region. The second isolation structure includes a supporting portion and a partitioning portion located on the supporting portion. An orthographic projection of the partitioning portion on the substrate covers an orthographic projection of the supporting portion on the substrate, and a maximum width of the supporting portion is smaller than a width of the partitioning portion. A tensile stress layer configured to apply a tensile stress to the partitioning portion is disposed on the partitioning portion.

Abstract: A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by the bottom edge of the second type conductive layer.

Abstract: A memory device includes a first chip and a second chip. The first chip includes a first storage array and a second storage array. The first storage array includes at least one first storage block. The first storage block includes a plurality of first word lines extending in a first direction and a plurality of first bit lines extending in a second direction. The second storage array includes at least one second storage block. By constructing a first global bit line sub-decoder block in a first overhead projection area formed by the first storage block and constructing a second global bit line sub-decoder block in a second overhead projection area formed by the second storage block, an occupied area of the first chip and the second chip after stacking can be reduced, which reduces an occupied area of the memory device and is beneficial for minimizing the memory device.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. An edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer.

Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.

Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

Abstract: A thin film transistor is provided. The thin film transistor includes abase substrate; a gate electrode on the base substrate; an active layer on the base substrate, the active layer including a polycrystalline silicon part including a polycrystalline silicon material and an amorphous silicon part including an amorphous silicon material; a gate insulating layer insulating the gate electrode from the active layer; a source electrode and a drain electrode on the base substrate; and an etch stop layer on a side of the polycrystalline silicon part away from the base substrate. An orthographic projection of the etch stop layer on the base substrate covers an orthographic projection of the polycrystalline silicon part on the base substrate, and an orthographic projection of at least a portion of the amorphous silicon part on the base substrate.

Abstract: Memory devices and associated methods and systems are disclosed herein. A representative memory device includes a substrate and a memory controller electrically coupled to the substrate. The memory controller can include a first in/out (I/O) channel and a second I/O channel. The memory device can further include a plurality of first memories and second memories coupled to the substrate and arranged in a stack in which the first memories are interleaved between the second memories. The memory device can further include (i) a plurality of first wire bonds electrically coupling the first memories to the first I/O channel of the memory controller and (ii) a plurality of second wire bonds electrically coupling the second memories to the second I/O channel.

Abstract: A method and assembly for board to board connection of active devices are described herein. The assembly comprises first and second superposed active devices, a first interfacing member electrically coupled to the first active device, and a flexible printed wiring board having a first end and a second end, the first end electrically coupled to the first interfacing member.

Abstract: A display substrate and a display device are provided. The display substrate includes a first power signal line and a pixel defining layer. The first power signal line includes first power signal sub-lines extending along a first direction and second power signal sub-lines extending along a second direction. The pixel defining layer includes a plurality of openings to define effective light-emitting regions of a plurality of sub-pixels, the plurality of sub-pixels include a sub-pixel pair including two sub-pixels arranged along the second direction, and the sub-pixel pair includes two effective light-emitting sub-regions with an interval therebetween. In a plan view, the first power signal sub-line passes through the interval between the two effective light-emitting sub-regions, at least one second power signal sub-line includes a fracture, and the two effective light-emitting sub-regions are located at the fracture.

Abstract: A display apparatus includes a substrate including an emission area and a non-emission area surrounding the emission area, a planarization layer formed on the substrate, a light emitting device disposed on the planarization layer, and including an anode electrode, and a separation layer disposed to be spaced apart from the anode electrode on the planarization layer, wherein the planarization layer is formed to overlap at least a portion of the non-emission area and includes a trench portion formed by removing at least a portion of the planarization layer, the trench portion at least partially overlaps an end of each of the anode electrode and the separation layer in the non-emission area, the light emitting device further including a light emitting layer and a cathode electrode sequentially formed on the anode electrode, and the light emitting layer and the cathode electrode are discontinuously formed in the trench portion.

Abstract: The present application provides a sensor module, a method for manufacturing the sensor module, and a display panel. The sensor module is integrated by a light-sensitive PN junction and a bottom-gate thin film transistor, a limitation of an integration of top-gate thin film transistor photosensitive sensor is prevented, and a problem of increased thickness and development cost in an integration of a photosensitive sensor on a bottom surface and the display panel is solved.