Abstract: Examples of an electronic package include a package assembly. The package assembly can include a substrate having a first substrate surface that includes a conductive layer attached to the first substrate surface. The package assembly includes a die communicatively coupled to the conductive layer and a contact block that includes a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween. The contact block can include a conductive material. The first contact surface can be coupled to the package assembly with a joint extended partially up the contact block wall. The electronic package can further include an overmold covering portions of the substrate, conductive layer, and die. The second contact surface of the contact block can be exposed through the overmold.

Abstract: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

Abstract: The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.

Abstract: A semiconductor laser device with external resonator with stable longitudinal mode regardless of variation of drive current is disclosed. The device includes: a semiconductor light-emitting element having a pair of end faces with a light emitting section disposed therebetween, and an external resonator configured to oscillate light emitted from the semiconductor light-emitting element, the external resonator being formed by a resonator mirror disposed outside the semiconductor light-emitting element and one of the pair of end faces that is farther from the resonator mirror, wherein, as the semiconductor light-emitting element, a semiconductor light-emitting element having a structure which does not oscillate light emitted therefrom by itself is used.

Abstract: Devices and techniques that use nonlinear optical effects in optical fiber to generate optical pulses via nonlinear optical wave mixing for various applications such as coherent Raman microscopic measurements and optical parametric oscillators. In some implementations, a tunable optical delay path is provided to cause an adjustable delay for synchronizing two optical beams of optical pulses.

Abstract: A dielectric electrode assembly, and a method (600) of manufacture thereof, including: a dielectric tube (226) having a cylindrical cross-section and a relative dielectric constant, ?2, the dielectric tube (226) filled with a gas having a relative dielectric constant, ?1; a structural dielectric (225) having a relative dielectric constant, ?3 surrounding the dielectric tube (226); metal electrodes (224) on opposite sides of the structural dielectric (225), the metal electrodes (224) having a flat cross-sectional geometry; and the structural dielectric (225) made from a material selected such that the relative dielectric constants of the structural dielectric (225), the dielectric tube (226), and the gas are interrelated and an approximately uniform electric field is generated within the dielectric tube (226) when power is applied to the metal electrodes (224).

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: A connection structure for a laser and a laser assembly are provided. The connection structure for a laser includes a first insulation substrate, where the first insulation substrate includes a conductive path separately on an upper surface and a lower surface thereof. A second insulation substrate is disposed on the upper surface of the first insulation substrate. An upper surface of the second insulation substrate includes a conductive path. The conductive path on the upper surface of the second insulation substrate is electrically connected to the conductive path on the lower surface of the first insulation substrate via a through-hole. The connection structure for a laser and the laser assembly in the present disclosure are configured to supplying power to a laser.

Abstract: The present invention provides a device and method for a laser based light source using a combination of laser diode or waveguide gain element excitation source based on gallium and nitrogen containing materials and wavelength conversion phosphor materials designed for inherent safety. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, light source with closed loop design features to yield the light source as an eye safe light source.

Abstract: A lockout system for a laser device of a type having a laser emitter operable to emit a laser beam at a plurality of intensity levels includes a lockout switch operable to be placed in either a first state or a second state, wherein the laser device is configured to prevent actuation of the laser emitter at an intensity level above a preselected threshold intensity level when the lockout switch is in the first state and to permit actuation of the laser emitter at an intensity level above the preselected threshold intensity level when the lockout switch is in the second state. A lockout key operable to transition the lockout switch between the first state and the second state. In a further aspect, a laser sight device incorporating the lockout system herein is provided.

Abstract: A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

Abstract: A quantum cascade laser includes: a substrate including a substrate end face; a semiconductor laminate having a laminate end face and a core extending in an axial direction; a first electrode disposed on the semiconductor laminate; a second electrode disposed on a back surface of the substrate; an insulating film disposed on the laminate end face and the first electrode; and a first metal film disposed on the laminate end face, the insulating film and the first electrode, the insulating film being between the first metal film and the semiconductor laminate. The substrate end face and the laminate end face extend along a reference plane intersecting the axial direction. The substrate end face has a first area and a second area arranged in a direction from the back surface to a principal surface of the substrate, and the first metal film has an end on the second area.

Abstract: A control apparatus for driving a laser diode comprises an output connection for connecting the laser diode, a regulation device for generating an output signal, a detector device which is designed to determine a regulation variable when the regulation device provides the output signal and the laser diode is connected to the output connection. The control apparatus furthermore comprises a computer device for providing a control signal for the regulation device, wherein the computer device provides the control signal independently of the regulation variable. The regulation device is designed in such a way that it generates a level for the output signal depending on the control signal and the determined regulation variable.

Abstract: A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.

Abstract: Laser-apparatus includes a fiber-MOPA arranged to deliver amplified seed optical pulses having a wavelength of about 1043 nanometers to a multi-pass ytterbium-doped yttrium aluminum garnet solid-state optical amplifier for further amplification.

Abstract: An apparatus for emitting pulsed electromagnetic laser radiation includes a laser gain element; an optical arrangement defining a laser resonator and arranged to re-direct radiation emitted by the gain element along a beam path back onto the gain element, the optical arrangement comprising an output coupler configured to couple a portion of the radiation in the laser resonator out of the laser resonator; and, a pump arrangement configured to pump the laser gain element. The optical arrangement includes a mode locker placed in the laser resonator in the beam path, and a birefringent element placed in the laser resonator in the beam path.

Abstract: To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: A laser system for generating a series of laser pulses comprising a laser generator that supplies an injection pulse to an amplifier; said amplifier comprising: a gain medium enclosed between a first mirror and a second, output, mirror opposite to said first mirror; and an optical switch set in the proximity of said first mirror; said laser system being characterized in that said amplifier is an unstable laser resonator and said injection pulse is supplied to said laser resonator in synchronism with opening of said optical switch; said series of laser pulses comprises at least one pulse having a duration shorter than or equal to 2 ns and an energy higher than 100 mJ and at least three times higher than the energy of any other pulse of said series of pulses.

Abstract: There is provided a laser device that is able to reduce management tasks by employing microbubble-containing water in which cooling water contains microbubbles. A semiconductor laser device includes a laser oscillation device that includes the one or more laser cavities and a housing that houses the one or more laser cavities; a cooling unit that is arranged outside the laser oscillation device, and can cool circulated cooling water that is used to cool the laser oscillation device; and a cooling water circulation passage that links the laser oscillation device and the cooling unit to allow the circulated cooling water to circulate therethrough, the circulated cooling water being microbubble-containing water that contains microbubbles having a peak diameter of 100 ?m or less.