Abstract: There is provided a passive Q-switch pulse laser device including a laser medium, and a saturable absorber. The laser medium is disposed between a pair of reflection means included in an optical resonator. The laser medium is excited by specific excitation light to emit emission light. The saturable absorber is disposed on an optical axis of the optical resonator and on a downstream side of the laser medium between the pair of reflection means. The saturable absorber has a transmittance increased by absorption of the emission light. At least one of the pair of reflection means is a polarizing element. The polarizing element has different reflectances with respect to the respective pieces of emission light in polarization directions orthogonal to each other.

Abstract: Fine-structure in the transverse mode of an excimer laser beam is minimized by having a plurality of resonator mirrors located at each end of a linear excimer laser. At one end, a highly-reflective end mirror and a partially-reflective end mirror are inclined at small angle with respect to each other. At the other end, two output-coupling mirrors are inclined at a small angle with respect to each other. This arrangement of resonator mirrors generates a composite laser beam that blurs any fine structure.

Abstract: A purging system for a laser system is described. The purging system comprising a cartridge that houses a desiccant material and which is configured for removable mounting with an enclosure of the laser system. The cartridge comprising a first mesh layer that provides a means for a fluid to flow to the desiccant material housed within the cartridge. The purging system further comprises a membrane located over the first mesh layer. The purging system therefore provides a mean for passively purging the laser system and so its operation does not require the employment of a pump. The employment of the removable cartridge also has the advantage that the downtimes of the laser system with which it is deployed are reduced during periods when it is required to dry or replace the desiccant material.

Abstract: A layout for a vertical-cavity surface-emitting laser (VCSEL) is provided. In an example embodiment, the layout comprises a VCSEL, an etched shape around a mesa of the VCSEL, a signal contact layer deposited on section of the mesa, and a ground contact layer. The ground contact layer comprises three parts and is positioned around a first section of the etched shape. The first part of the ground contact layer is deposited on a second section of the etched shape. The second and third parts of the ground contact layer comprise two legs off of the first part. The two legs are symmetrically positioned about two sides of the signal contact layer to form a ground-signal-ground configuration.

Abstract: The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

Abstract: A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

Abstract: Semiconductor laser device (1) includes lower electrode block (10) that has a first terminal hole and first and second connection holes, upper electrode block (60) that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink (110) that has fourth connection holes communicating with the respective second connection holes, and optical component (100) attached to upper electrode block (60). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block (10) is disposed on heat sink (110). Lower electrode block (10) and upper electrode block (60) are fastened together with first fasteners (90, 90), whereas lower electrode block (10) and heat sink (110) are fastened together with second fasteners (91, 91).

Abstract: The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 ?m or more.

Abstract: A laser architecture for selectively producing short high-energy laser pulses having octave-spanning, continuous tunability. Two oppositely chirped pulses are used in combination with a pair of tunable pulse stretcher/compressors to produce a short, high-energy, tunable, broadband pulse.

Abstract: A quantum cascade laser including: a laser structure having a first region including a first facet, a second region including a second facet, an epitaxial surface, and a substrate surface; an insulating film disposed on the second facet and the epitaxial surface; an electrode disposed on the epitaxial surface and the insulating film and in contact with the epitaxial surface; and a metal film disposed over the second facet and the epitaxial surface and separated from the electrode and the substrate surface. The insulating film is disposed between the metal film and the second facet and between the metal film and the epitaxial surface. The second region includes a semiconductor mesa. The second facet is located at a boundary between the first region and the second region. The first region includes a connecting surface. The connecting surface connects the second facet to the first facet.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: A push-pull circuit for an opto-electronic device includes: an output node; a pull-up circuit that, in operation, controls a falling edge rate of an input signal to the opto-electronic device while sharing charge with the output node; and a pull-down circuit that, in operation, controls a rising edge rate of the input signal to the opto-electronic device while sharing charge with the output node.

Abstract: Techniques for producing a Brillouin laser are provided. According to some aspects, techniques are based on forward Brillouin scattering and a multimode acousto-optic waveguide in which light is scattered between optical modes of the waveguide via the Brillouin scattering. This process may transfer energy from a waveguide mode of pump light to a waveguide mode of Stokes light. This process may be referred to herein as Stimulated Inter-Modal Brillouin Scattering (SIMS). Since SIMS is based on forward Brillouin scattering, laser (Stokes) light may be output in a different direction than back toward the input pump light, and as such there is no need for a circulator or other non-reciprocal device to protect the pump light as in conventional devices.

Abstract: A method for sweeping an electromagnetic radiation source (12) to produce single mode operation having an optimized side-mode suppression ratio over a continuous range of wavelengths within a prescribed temporal profile, the electromagnetic radiation source is configured to output electromagnetic radiation at a given wavelength based upon parameters. The method includes determining a set of parameter combinations that satisfy a condition for a desired set of wavelengths and a maximum side mode suppression ratio over the range of wavelengths. The set of parameter combinations define sub-paths for transitioning from one wavelength to another wavelength. Combinations of select sub-paths provide a multivariate path for transitioning over the range of wavelengths. The method also includes controlling the semiconductor laser to emit electromagnetic radiation over the range of wavelengths by traversing the multivariate path in a desired manner.

Abstract: Apparatus for modelocking a fiber laser cavity includes two variable retarder assemblies and a polarizing element. The variable retarder assemblies each have two electronically addressable elements and one fixed element. The first variable retarder assembly prepares a polarization state suitable for NPE modelocking to be launched into the fiber, and the second variable retarder assembly controls the polarization state after exiting the fiber, before being incident on the polarizing element. A control system controls the electronically addressable phase retarders in order to create and modify conditions for modelocking the fiber laser.

Abstract: In various embodiments, laser resonator modules produce output beams via manipulation of input beams on opposite sides of the module. The input beams are emitted by one or more beam emitters that may be cooled using a liquid coolant cavity. The liquid coolant cavity may be isolated from optical elements utilized to manipulate the input beams, at least in part, by an isolation wall protruding from the base plate of the resonator module.

Abstract: A laser driver with high-speed and high-current and current modulating method thereof is invented. The laser driver includes a first driving unit and a second driving unit, each driving unit including a pre-drive amplifier circuit and a main drive amplifier circuit. The pre-drive amplifier circuit includes a first differential transistor pair circuit, a differential voltage conversion circuit, a DC common mode level reduction circuit and a first cascode current mirror circuit. The main drive amplifier circuit includes a second differential transistor pair circuit, a bandwidth boost circuit, a matching circuit and a second cascode current mirror circuit. The present invention avoids the enhancement of chip area caused by the use of passive inductors peaking mode to enhance bandwidth, and reduces the cost of chip, design complexity and circuit power consumption.

Abstract: A method of making a device includes forming an opening in a dielectric layer to expose a conductive region in a substrate. The method further includes depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer. The method further includes diffusing the dopant from the conformal layer of dopant material into the dielectric layer using an anneal process.

Abstract: In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

Abstract: Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.