Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.

Abstract: The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.

Abstract: An image sensor is provided. The An image sensor includes: a first substrate including a first side and a second side opposite to each other, and an active region; a plurality of pixel regions, each including a photoelectric conversion layer on the first side of the first substrate; a pixel isolation pattern which separates the plurality of pixel regions from each other and extends along a direction perpendicular to the first side of the first substrate; and a first transistor, a second transistor and a third transistor corresponding to a first pixel region of the plurality of pixel regions. The first transistor, the second transistor and the third transistor share a common source/drain region inside the active region.

Abstract: A sensor chip includes a sensor pixel. The sensor pixel includes an avalanche photodetector. A circuit is adjacent to the avalanche photodetector. The circuit is coupled to the avalanche photodetector. An isolation structure at least partially encloses the circuit and is between the avalanche photodetector and the circuit.

Abstract: A microelectronic circuit comprising: a stack of lower, intermediate and upper circuit tiers, a matrix of devices outputting and/or receiving analogue electrical signals, made in the upper circuit tier, an analogue amplification and/or processing circuit made in the lower circuit tier, a digital processing circuit made in the intermediate circuit tier, an analogue-to-digital and/or digital-to-analogue conversion circuit made in the lower and/or intermediate circuit tier, electrically coupled to the analogue circuit and the digital circuit, electrical interconnections passing through the intermediate circuit tier and coupling the analogue circuit to the devices.

Abstract: A fiber-optic system for use in optical sensing includes a multicore sensing fiber having at least two cores of which each of the at least two cores has a first core diameter, and a multicore lead-in fiber having at least two cores including a position corresponding with the position of the at least two cores of the multicore sensing fiber. Each of the at least two cores of the multicore lead-in fiber have a second core diameter. The second core diameter is substantially larger than the first core diameter. The system further includes an alignment means for aligning the multicore sensing fiber and the multicore lead-in fiber so that the lead-in fiber and the multicore sensing fiber are configured for coupling radiation between the fibers through the cores.

Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A through-beam photoelectric sensor includes an emitter and a receiver, the emitter is opposite the receiver, the receiver is configured to receive an optical signal from the emitter, the emitter comprises a first housing, an emitter lens, a first PCB, a lamp panel and an emission lamp, the emitter lens is embedded in the first housing, a light hole is formed in the lamp panel, the emission lamp is welded on the lamp panel and clamped in the light hole, a limit block is provided in the first housing, the lamp panel is detachably mounted on the limit block, and the first PCB is sleeved over the limit block and engaged with the lamp panel, such that a wick of the emission lamp is aligned with an optical center of the emitter lens. An assembly method is applied to the through-beam photoelectric sensor.

Abstract: An imaging device comprises a first chip that includes a first semiconductor substrate including a photoelectric conversion region. The first chip includes a first insulating layer including a first multilayer wiring electrically connected to the photoelectric conversion region. The first multilayer wiring includes a first vertical signal line (VSL1) to output a first pixel signal, and a first wiring. The imaging device includes a second chip including a second semiconductor substrate including a logic circuit. The second chip includes a second insulating layer including a second multilayer wiring electrically connected to the logic circuit. The second multilayer wiring includes a second wiring. The first chip and the second chip are bonded to one another, and, in a plan view, the first wiring and the second wiring overlap with at least a portion of the first vertical signal line (VSL1).

Abstract: To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.

Abstract: An image sensor package includes an image sensor chip on a package substrate, a logic chip on the package substrate and perpendicularly overlapping the image sensor chip, and a memory chip on the package substrate and perpendicularly overlapping the image sensor chip and logic chip. The logic chip processes a pixel signal output from the image sensor chip. The memory chip is electrically connected to the image sensor chip through a conductive wire and stores at least one of the pixel signal from the image sensor chip or a pixel signal processed by the logic chip. The memory chip receives the pixel signal output from the image sensor chip through the conductive wire and receives the pixel signal processed by the logic chip through the image sensor chip and the conductive wire.

Abstract: The present invention relates to an optical fiber sensor, comprising an optical fiber having embedded therein at least one fiber core (14, 16, 18, 20) extending along a length of the optical fiber, the at least one fiber core having a plurality of single fiber Bragg gratings (40, 42, 44) arranged in series along the at least one fiber core (14, 16, 18, 20), wherein each fiber Bragg grating (40, 42, 44) has a single reflection spectrum around a single reflection peak wavelength when interrogated with light in an unstrained state of the at least one fiber core (14, 16, 18, 20), wherein the reflection peak wavelengths of the single reflection spectra are different from fiber Bragg grating (40, 42, 44) to fiber Bragg grating (40, 42, 44) along the at least one fiber core. Also described is an optical system and a method of interrogating an optical fiber sensor.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.

Abstract: An optical module includes a beam-tilting light source enclosure. The enclosure is coupled to a substrate that includes a light emitter connected thereto. The enclosure has a geometry such that the enclosure has a first surface configured to couple substantially flat to the substrate and a second surface tilted with respect to the first surface and configured to couple substantially flat to a component of an electronic device through which the light is to project. The enclosure is optically transmissive and covers the light source when coupled to the substrate. In this way, the enclosure may be assembled and used in the electronic device by coupling the first surface to the substrate and coupling the second surface to the component.

Abstract: An optical module includes a beam-tilting light source enclosure. The enclosure is coupled to a substrate that includes a light emitter connected thereto. The enclosure has a geometry such that the enclosure has a first surface configured to couple substantially flat to the substrate and a second surface tilted with respect to the first surface and configured to couple substantially flat to a component of an electronic device through which the light is to project. The enclosure is optically transmissive and covers the light source when coupled to the substrate. In this way, the enclosure may be assembled and used in the electronic device by coupling the first surface to the substrate and coupling the second surface to the component.

Abstract: Superconducting nanowire single photon detectors have recently been developed for a wide range of applications, including imaging and communications. An improved detection system is disclosed, whereby the detectors are monolithically integrated on the same chip with Josephson junctions for control and data processing. This enables an enhanced data rate, thereby facilitating several new and improved applications. A preferred embodiment comprises integrated digital processing based on single-flux-quantum pulses. An integrated multilayer fabrication method for manufacturing these integrated detectors is also disclosed. Preferred examples of systems comprising such integrated nanowire photon detectors include a time-correlated single photon counter, a quantum random number generator, an integrated single-photon imaging array, a sensitive digital communication receiver, and quantum-key distribution for a quantum communication system.

Abstract: A method and system for autofocusing an objective lens in a microscope system are disclosed. A decentered aperture is disposed in an optical path between an objective lens and an image plane of an image capturing device and a plurality of reference images are captured. Each reference image is captured when the objective lens is positioned at a corresponding z-position of a plurality of z-positions along an axis of travel of the objective lens and the optical path is at least partially occluded by the decentered aperture. At least one reference image of the plurality of the reference images is associated with a best focus position. The plurality of reference images are analyzed to develop a plurality of pattern locations, wherein each pattern location represents a position of a pattern formed on the image plane when a corresponding reference image was captured. The objective lens is positioned in accordance with the best focus position and the plurality of pattern locations.

Abstract: A vacuum feedthrough (10) which is constructed in radial layers comprises the following elements (from inwards to outwards): —a lens element (11), —a first ring (12) made of glass, —a first hollow cylinder (13) made of a first dielectric material, —a first electrically conductive layer (18), —a second hollow cylinder (14) made of glass, —a third hollow cylinder (15) made of ceramic, —a second ring made of glass (16), and—a frame (17) made of metal. On the basis of the vacuum feedthrough, the invention additionally relates to an electrode assembly, to a device for generating a DBD plasma discharge, to a measuring device for characterizing a pressure and/or a gas composition, and to a method for operating the measuring device.