Patents Examined by Valerie N Brown
  • Patent number: 8022433
    Abstract: Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and/or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and air-tightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: September 20, 2011
    Assignee: Hitachi Metals, Ltd.
    Inventors: Takanori Aono, Ryoji Okada, Atsushi Kazama, Yoshiaki Takada