Patents Examined by Veronica O'Keefe
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Patent number: 4661178Abstract: A predominately beta phase copper base alloy which is adapted for forming in a semi-solid slurry condition. The alloy has a microstructure comprising discrete particles within a lower melting point matrix and consists essentially of from about 9% to about 10.5% by weight aluminum, at least about 10% by weight nickel and the balance essentially copper. In accordance with an alternative embodiment the nickel can be replaced on a one for one basis by iron within certain limits. The alloys are processed by chill casting with a cooling rate throughout the section of the casting comprising at least about 10.degree. C./sec. The alloys as-cast or when reheated to a semi-solid exhibit a microstructure suitable for press forging.Type: GrantFiled: June 28, 1985Date of Patent: April 28, 1987Assignee: Olin CorporationInventors: Sankaranarayanan Ashok, John F. Breedis
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Patent number: 4661316Abstract: A heat-resistant alloy comprising an alloy based on an intermetallic compound TiAl composed of 60 to 70% by weight of titanium and 30 to 36% by weight of aluminum, and 0.1 to 5.0% by weight of manganese.Type: GrantFiled: July 30, 1985Date of Patent: April 28, 1987Assignee: National Research Institute for MetalsInventors: Kenki Hashimoto, Haruo Doi, Tsujimoto Tokuzou, Nakano Osamu, Nobuki Minoru
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Patent number: 4656101Abstract: A electronic device having a structure in which at least one electronic element, including an insulating film or covered with a protecting film, is formed on a substrate, where the insulating or protecting film consist principally of aluminum nitride. Alternatively, the insulating or protecting film can be a laminated member composed of a film consisting principally of aluminum nitride and a film consisting principally of silicon oxide or silicon nitride.Type: GrantFiled: November 7, 1985Date of Patent: April 7, 1987Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 4645719Abstract: A magnetic device comprised of a soft magnetic thin film having uniaxial magnetic anastropy is achieved by depositing a first permalloy material on a substrate in a pattern having a plurality of small rectangular elements each of which will function as a small bar magnet due to shape anisotropy and depositing a second permalloy film over the remainder of the substrate which will have uniaxial anisotropy due to the magnetic field of each small bar magnet.Type: GrantFiled: June 18, 1984Date of Patent: February 24, 1987Assignee: Fuji Photo Film Co., Ltd.Inventor: Hiroichi Naito
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Patent number: 4642146Abstract: A copper base alloy capable of forming a microstructure comprising a plurality of discrete particles in a surrounding metal matrix having a lower melting point than the particles. The alloy consists essentially of from about 3% to about 6% nickel, from about 2% to about 4.25% aluminum, from about 0.25% to about 1.2% silicon, from about 5% to about 15% zinc, up to about 5% iron and the balance essentially copper. When iron is included in an amount from about 3% to about 5% and zinc is restricted to a range of from about 8% to about 10%, the alloy is capable of forming the desired structure in the as-cast condition using a process which does not include stirring during casting.Type: GrantFiled: October 11, 1985Date of Patent: February 10, 1987Assignee: Olin CorporationInventors: Sankaranarayanan Ashok, John F. Breedis
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Patent number: 4642270Abstract: In a magnetic recording medium comprising a non-magnetic substrate and a magnetic thin film formed on the surface thereof and including at least two layers, the upper layer in the form of a crystalline cobalt-chromium alloy layer suitable for perpendicular magnetization is placed on the lower layer in the form of an amorphous layer of permalloy having high permeability and low coercive force.Type: GrantFiled: November 27, 1984Date of Patent: February 10, 1987Assignee: TDK CorporationInventors: Haruyuki Morita, Jiro Yoshinari, Kazumasa Fukuda
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Patent number: 4634637Abstract: To a sheet of oriented polyethylene terephthalate a layer of nickel chrome alloy with an optical density of approximately 60% is applied by conventional vacuum deposition. To this sheet a subsequent stripe layer of stainless steel at 35% is applied by vacuum deposition down the center portion of the web which yields a combined optical density of approximately 21% over the center area. This first sheet is then laminated with a suitable optically clear adhesive to a second sheet of oriented polyethylene terephthalate incorporating a center portion which includes a nickel chrome stripe with an optical density of approximately 35% applied by conventional vacuum deposition. The resulting composite exhibits a vignette pattern of dark (optical density 7 to 12%) to light optical density 50 to 70% (from center to edge). A suitable optically clear mounting adhesive is then applied. When desired, the finished laminate contains a layer of clear PET which has been coated with a hard coat, i.e.Type: GrantFiled: November 22, 1985Date of Patent: January 6, 1987Assignee: Gila River Products, Inc.Inventors: Dell B. Oliver, Peter Jahoda
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Patent number: 4632806Abstract: A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed is a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.Type: GrantFiled: December 17, 1984Date of Patent: December 30, 1986Assignees: Mitsubishi Kinzoku Kabushiki Kaisha, Fujitsu LimitedInventors: Masaki Morikawa, Hideaki Yoshida, Kunio Kishida
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Patent number: 4632884Abstract: In a rectangular, square or other shaped single-crystal wafer of a III-V group compound semiconductor, one corner of the wafer is cut off, provided with a marking, or the wafer has a part of the original shape of the grown single-crystal ingot left intact on one side of the wafer. With the wafers thus formed, it can be distinguished between the front and back sides of the wafer, or also the direction in which a V groove etch is to occur can be identified.Type: GrantFiled: November 19, 1984Date of Patent: December 30, 1986Assignee: Sumitomo Electric Industries, Ltd.Inventors: Osamu Shikatani, Jun Yamaguchi
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Patent number: 4632707Abstract: A process for heating steel under atmosphere for annealing or hardening wherein the atmosphere is generated by injecting a mixture of dimethyl ether and nitrogen into the furnace.Type: GrantFiled: April 9, 1985Date of Patent: December 30, 1986Assignee: Air Products and Chemicals, Inc.Inventors: Robert H. Shay, Kerry R. Berger, Thomas S. Bannos
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Patent number: 4631237Abstract: A wire electrode for a spark-eroding system for erosion cutting of workpieces using intermittent electrical charges includes a core of a current-conducting material and a wire coating of a material with a lower evaporation temperature, for example zinc. The core consists of one of the following alloys according to DIN (German Industrial Standard) 17666:(a) Cu Mg 0.4;(b) Cu Fe 2P;(c) Cu Cr Zr;(d) Cu Zr.Type: GrantFiled: April 17, 1985Date of Patent: December 23, 1986Assignee: Berkenhoff GmbHInventors: Erich Dommer, Heinrich Groos
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Patent number: 4629660Abstract: A perpendicular magnetic-recording medium wherein an amorphous alloy layer of nickel and phosphorus is formed on a disc substrate; the surface of the alloy layer is smoothed with high precision; and a ferromagnetic Co-based perpendicular magnetic-recording layer is formed on the smoothed surface of the alloy layer.Type: GrantFiled: March 12, 1984Date of Patent: December 16, 1986Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Masayuki Sagoi, Reiji Nishikawa
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Patent number: 4627960Abstract: A copper-based alloy for use in electrical and electronic devices, particularly as a material used for forming lead frames of semiconductor devices, which is less expensive than phosphor bronze while providing a mechanical strength and durability to repeated bending comparable with those of phosphor bronze, and also a relatively high conductivity. The inventive alloy is a copper-based alloy containing 1.2 to 2.5 wt % tin, 0.01 to 0.15 wt % phosphorous, 0.1 to 0.6 wt % nickel, 0.05 to 1 wt % zinc, and the remainder being copper and minute amounts of unavoidable impurities.Type: GrantFiled: February 8, 1985Date of Patent: December 9, 1986Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Takashi Nakajima, Kenji Kubosono
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Patent number: 4626278Abstract: Soluble gas is introduced in a melt material which is then atomized and rapidly cooled. The cooling drives the gas from solution, further disintegrating the atomized material to an ultra-fine powder. In one embodiment the atomization and rapid cooling are effected using a gas atomization die. Introduction of the soluble gas may be effected by addition of reactive constituents to the melt, for reactively forming such gas. Finer powders with desirable metallurgical properties are formed using a metallic melt.Type: GrantFiled: July 26, 1984Date of Patent: December 2, 1986Inventors: George B. Kenney, Charles P. Ashdown
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Patent number: 4622273Abstract: A magnetic recording medium for perpendicular magnetization includes a base of a nonmagnetic material, a first magnetic layer of a soft magnetic material on a surface of the base, a second magnetic layer having perpendicular anisotropy on a surface of the first magnetic layer, the second magnetic layer being magnetized in a transverse direction thereof. The second magnetic layer is composed of a three-element alloy of cobalt, chromium, and hafnium, cobalt being a main component with chromium and hafnium added thereto.Type: GrantFiled: November 5, 1984Date of Patent: November 11, 1986Assignee: Alps Electric Co., Ltd.Inventors: Keishi Nakashima, Takashi Hatanai, Koichi Mukasa
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Patent number: 4620885Abstract: A spring material for electric and electronic parts having a high modulus of elasticity and good electrical conductivity. The material is made by melting Cu, Ni, Ti or mother alloy thereof and Cu--P as deoxidizer at a temperature between a melting point and 1,400.degree. C. to obtain a molten alloy consisting of 0.5.about.2.0% by weight of Ni, 0.1.about.1.0% by weight of Ti, less than 0.2% by weight of P and the remainder being Cu; casting the molten alloy into a metal mold to obtain an ingot; subjecting the ingot to hot (or warm) working, cold working and annealing; and finally rolling the annealed sheet above 50% and annealing it at low temperature with air cooling to obtain a formed product having a stable structure.Type: GrantFiled: December 27, 1985Date of Patent: November 4, 1986Assignees: Nakasato Limited, Naohiro IgataInventors: Naohiro Igata, Shinji Sato
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Patent number: 4619872Abstract: A process for producing magnetic plated media suitable for use in high-performance disk drives is disclosed. A layer of nickel is first provided on a standard aluminum alloy substrate, by electroless deposition, to improve adhesion of subsequent layers. A layer of nickel phosphorous and a magnetic layer of nickel cobalt are then, in turn, electroplated. The plated media disk is then oxidized below a nickel-magnetizing temperature to provide a protective outer surface.A variation of this process is also disclosed. This time a magnetically-shielding copper layer is electroplated over the first nickel layer. The nickel phosphorous and nickel cobalt layers are then electroplated on as before. The plated media can now be oxidized at a temperature higher than the nickel-magnetizing temperature to speed up the process.Type: GrantFiled: December 26, 1985Date of Patent: October 28, 1986Assignee: Digital Equipment CorporationInventors: Dan Goor, Everett Niles, Robert L. Stone
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Patent number: 4619715Abstract: There is provided an inorganic salt-free, anhydrous, noncorrosive powdered solder metal paste and vehicle therefor which vehicle is characterized by the presence therein of a nonaqueous resinous binder and a nonaqueous organic liquid composition having a surface tension or surface energy of from 43 to 65 dynes/cm. and higher at 20.degree. C. When powdered solder metal or powdered solder metal alloy is distributed in such a vehicle in an amount sufficient to form a paste, a deposit will not undergo hot slump at elevated temperatures. The pastes and vehicles are free of inorganic metal salts.Type: GrantFiled: December 9, 1985Date of Patent: October 28, 1986Assignee: SCM CorporationInventor: Jennie S. Hwang
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Patent number: 4619695Abstract: A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.Type: GrantFiled: July 26, 1984Date of Patent: October 28, 1986Assignees: Nihon Kogyo Kabushiki Kaisha, Nippon Telegraph & Telephone Public CorporationInventors: Hideo Oikawa, Takao Amazawa, Nakahachiro Honma, Hideo Miyazaki, Iwao Kyono, Nobuyuki Mori, Yoshiharu Katoh, Masami Kuroki
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Patent number: 4615951Abstract: A reliable garnet to metal hermetic seal is obtained by metallizing the garnet with successive sputtered layers of tantalum or titanium, molybdenum or tungsten and nickel, followed by soldering or brazing the metallized garnet to a metal member.Type: GrantFiled: September 23, 1985Date of Patent: October 7, 1986Assignee: North American Philips CorporationInventors: Robert L. Bronnes, James K. McKinlay, Richard C. Sweet, Walter K. Zwicker