Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: The invention discloses a pattern layout of an active region and a forming method thereof. The feature of the present invention is that in the sub-pattern unit, an appropriate active area pattern is designed according to the bit line pitch (BLP) and the word line pitch (WLP), the active area pattern is a stepped pattern formed by connecting a plurality of rectangular patterns in series, and the active area pattern is arranged along a first direction, the angle between the first direction and the horizontal direction is A. In addition, according to the angle A, the shortest distance (P) between adjacent stepped patterns, the length and width of sub-pattern units, etc., The positions of some stepped active area patterns are adjusted, so that the distance between multiple active area patterns can be consistent when being repeatedly arranged, thereby improving the uniformity of overall pattern distribution.

Abstract: A semiconductor device may include active pattern, a silicon liner, an insulation layer, an isolation pattern and a transistor. The active pattern may protrude from a substrate. The silicon liner having a crystalline structure may be formed conformally on surfaces of the active pattern and the substrate. The insulation layer may be formed on the silicon liner. The isolation pattern may be formed on the insulation layer to fill a trench adjacent to the active pattern. The transistor may include a gate structure and impurity regions. The gate structure may be disposed on the silicon liner, and the impurity regions may be formed at the silicon liner and the active pattern adjacent to both sides of the gate structure.

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: A semiconductor device includes a lower structure, a stack structure on the lower structure and extending from a memory cell region into a connection region, gate contact plugs on the stack structure in the connection region, and a memory vertical structure through the stack structure in the memory cell region, wherein the stack structure includes interlayer insulating layers and horizontal layers alternately stacked, wherein, in the connection region, the stack structure includes a staircase region and a flat region, wherein the staircase region includes lowered pads, wherein the flat region includes a flat pad region, a flat edge region, and a flat dummy region between the flat pad region and the flat edge region, and wherein the gate contact plugs include first gate contact plugs on the pads, flat contact plugs on the flat pad region, and a flat edge contact plug on the flat edge region.

Abstract: A method and apparatus for substrate component layout and bonding for increased package capacity. According to certain embodiments, a wire-bonding finger strip is disposed between a flip-chip die and a NAND die stack to reduce a keep out zone (KOZ) required for an underfill material dispensed beneath the flip-chip die. To further inhibit the flow of the underfill material and further reduce the KOZ, a solder mask may be placed adjacent to the flip-chip. According to certain embodiments, there may be at least three sides of the flip-chip that may have such an adjacent solder mask placement. The three sides of the flip-chip according to such embodiments may be those non-adjacent to the wire-bonding finger strip.

Abstract: Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method may include forming a trench in a substrate, lining a surface of the trench with an initial gate dielectric layer, forming a gate electrode to partially fill the lined trench, forming a sacrificial material spaced apart from a top surface of the gate electrode and to selectively cover a top corner of the lined trench, removing a part of the initial gate dielectric layer of the lined trench which is exposed by the sacrificial material in order to form an air gap, and forming a capping layer to cap a side surface of the air gap, over the gate electrode.

Abstract: A manufacturing method of semiconductor device is provided. In the manufacturing method, a tunneling dielectric layer, floating gates on the tunneling dielectric layer, an ONO layer on the floating gates, and control gates on the ONO layer are formed. During the formation of the floating gates and the control gates, reactive-ion etching (R.I.E.) is not used at all, and thus damage to the floating and control gates from high-density plasma is prevented, such as charge trap in the floating gates may be significantly reduced to improve the reliability of data storage.

Abstract: A semiconductor structure and its manufacturing method are provided. The semiconductor structure includes a substrate having a trench. The semiconductor structure also includes an oxide layer conformally formed in the trench and a protective layer formed in the trench. Also, the protective layer is conformally formed on the oxide layer. The semiconductor structure further includes an insulating material layer in the trench, and the insulating material layer is formed above the protective layer, wherein a top surface of the insulating material layer is higher than a top surface of the protective layer.

Abstract: A semiconductor device including a substrate including a recess; a gate insulation layer on a surface of the recess; a first gate pattern on the gate insulation layer and filling a lower portion of the recess; a second gate pattern on the first gate pattern in the recess and including a material having a work function different from a work function of the first gate pattern; a capping insulation pattern on the second gate pattern and filling an upper portion of the recess; a leakage blocking oxide layer on the gate insulation layer at an upper sidewall of the recess above an upper surface of the first gate pattern and contacting a sidewall of the capping insulation pattern; and impurity regions in the substrate and adjacent to the upper sidewall of the recess, each impurity region having a lower surface higher than the upper surface of the first gate pattern.

Abstract: The present invention discloses a semiconductor memory device, including a substrate, active areas, first wires and at least one first plug. The active areas extend parallel to each other along a first direction, and the first wires cross over the active areas, wherein each of the first wires has a first end and a second end opposite to each other. The first plug is disposed on the first end of the first wire and electrically connected with the first wire, wherein the first plug entirely wraps the first end of the first wire and is in direct contact with a top surface, sidewalls and an end surface of the first end. Therefore, the contact area between the plug and the first wires may be increased, the contact resistance of the plug may be reduced, and the reliability of electrical connection between the plug and the first wires may be improved.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a carrier, a first electronic component, a second electronic component, a third electronic component, a fourth electronic component, and a connection element. The first electronic component is disposed over a surface of the carrier. The second electronic component is disposed over the first electronic component. The third electronic component is spaced apart from the first electronic component and disposed over the surface of the carrier. The fourth electronic component is disposed over the third electronic component. The connection element is electrically connecting the second electronic component to the fourth electronic component.

Abstract: A semiconductor chip includes a back end of line (BEOL) structure on a first surface of the semiconductor substrate and including a conductive connection structure and an interlayer insulating layer covering the conductive connection structure, a conductive reinforcing layer arranged on the BEOL structure, a cover insulating layer covering the conductive reinforcing layer, an under bump metal (UBM) layer including a plurality of pad connection portions connected to the conductive reinforcing layer through openings in the cover insulating layer, and a plurality of first connection bumps arranged on the plurality of pad connection portions of the UBM layer, electrically connected to one another through the conductive reinforcing layer, and located to overlap the conductive reinforcing layer. The conductive reinforcing layer has a plate shape and extends parallel to the first surface of the semiconductor substrate.

Abstract: A semiconductor device may include a substrate including a recess, a gate insulation layer on a surface of the recess, an impurity barrier layer on a surface of the gate insulation layer to cover the surface of the gate insulation layer, a first gate pattern on impurity barrier layer to fill a lower portion of the recess, a second gate pattern on the first gate pattern in the recess, a capping insulation pattern on the second gate pattern to fill the recess, and impurity regions at the substrate adjacent to an upper sidewall of the recess. The impurity barrier layer may have a concentration of nitrogen higher than a concentration of nitrogen included in the gate insulation layer. The second gate pattern may include a material different from a material of the first gate pattern. A lower surface of the impurity regions may be higher than an upper surface of the first gate pattern. Thus, the semiconductor device may have good characteristics.

Abstract: A circuit module including an integrated circuit (IC) and a method for forming an IC are disclosed. An embodiment of the circuit module includes a trench having a conductive trench liner formed in a semiconductor substrate, and further includes semiconductor device circuitry formed in the substrate, where a conductor within a metallization layer of the semiconductor device circuitry electrically connects to the conductive trench liner. The embodiment also includes an insulating structure arranged over the conductive trench liner, where the insulating structure extends to an upper contact formed within an upper metallization layer of the semiconductor device circuitry. An isolation capacitor operable between the upper contact and the conductive trench liner has one or more electrical properties dependent on both a depth of the trench and a number of metallization layers below the upper metal layer in the semiconductor device circuitry.

Abstract: An integrated circuit chip has an active surface and a chip pad arrangement on the active surface. The chip pad arrangement includes four pairs of chip pads arranged in two rows along a side edge of the active surface. Two pairs of chip pads are a first transmission differential pair chip pad and a first reception differential pair chip pad respectively. Positions of the two pairs of chip pads are not adjacent to each other and are in different rows. The other two pairs of chip pads are a second transmission differential chip pad and a second reception differential chip pad respectively. Positions of the other two pairs of chip pads are not adjacent to each other and are in different rows. In addition, a package substrate corresponding to the integrated circuit chip and an electronic assembly including the package substrate and the integrated circuit chip are also provided.

Abstract: A semiconductor device includes an interposer substrate and at least one die mounted on the interposer substrate. The interposer substrate includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, an interlayer insulating layer on the first surface of the semiconductor substrate, a capacitor in a hole penetrating the interlayer insulating layer, an interconnection layer on the interlayer insulating layer, and a through-via extending from the interconnection layer toward the second surface of the semiconductor substrate in a vertical direction that is perpendicular to the first surface of the semiconductor substrate. The capacitor includes a sequential stack of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer and a third electrode. A bottom of the hole is distal from the second surface of the semiconductor substrate in relation to the first surface of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.

Abstract: A package substrate has a dielectric layer and a redistribution metal layer. The dielectric layer has a first dielectric material and a second dielectric material. The first dielectric material is different than the second dielectric material. The second dielectric material may have a dielectric constant that is either greater than or less than the dielectric constant of the first dielectric material. The second dielectric may be selected based on a specific target application such as single-ended signal routing or serializer/deserializer (SERDES) routing.

Abstract: A semiconductor package including a first lower stack on a substrate and including first lower semiconductor chips, a redistribution substrate on the first lower stack, a redistribution connector electrically connecting the substrate to the redistribution substrate, a first upper stack on the redistribution substrate and including first upper semiconductor chips, a first upper connector electrically connecting the redistribution substrate to the first upper stack, a second upper stack horizontally spaced apart from the first upper stack and including second upper semiconductor chips, and a second upper connector electrically connecting the redistribution substrate to the second upper stack may be provided. The redistribution connector may be on one side of the redistribution substrate. The first upper connector may be on one side of the first upper stack. The second upper connector may be on one side of the second upper stack.