Abstract: A semiconductor structure includes system-on-integrated chips, a first redistribution circuit structure and first conductive terminals. The system-on-integrated chips each include a die stack having two or more than two tiers, and each tier includes at least one semiconductor die. The first redistribution circuit structure is located on and electrically connected to the system-on-integrated chips. The first conductive terminals are connected on the first redistribution circuit structure, where the first redistribution circuit structure is located between the system-on-integrated chips and the first conductive terminals.

Abstract: A semiconductor package includes low and high voltage contact pads, an output contact pad, a half-bridge circuit, and first, second and third leads. The half bridge circuit includes first and second transistor devices coupled in series at an output node. Both transistor devices have a first major surface which extends substantially perpendicularly to the low voltage contact pad, the high voltage contact pad, and the output contact pad. Both transistor devices are arranged in a device portion of the package and are mounted on a first lead, the first lead providing the output contact pad and being arranged on a first side of the device portion. The second and third leads are arranged in a common plane on a second side of the device portion that opposes the first side. The second lead provides the low voltage contact pad and the third second lead provides the high voltage contact pad.

Abstract: A microelectronic device comprises a stack structure comprising an alternating sequence of conductive material and insulative material arranged in tiers, and having blocks separated by dielectric slot structures. Each of the blocks comprises a stadium structure, a filled trench overlying the stadium structure, support structures extending through the filled trench and tiers of the stack structure, and dielectric liner structures covering sidewalls of the support structures. The stadium structure comprises staircase structures each having steps comprising edges of the tiers of the stack structure. The filled trench comprises a dielectric material interposed between at least two additional dielectric materials. The dielectric liner structures comprise first protrusions at vertical positions of the dielectric material, and second protrusions at vertical positions of the conductive material of the tiers of the stack structure. The second protrusions have greater horizontal dimensions than the first protrusions.

Abstract: A semiconductor device includes a substrate including a memory region and a peripheral region located at an outer side of the memory region; a memory structure located above the memory region and including a memory array and signal lines, the memory array at least including memory cells spaced apart from each other along a first direction, and the signal lines being electrically connected with the memory cells, the first direction is perpendicular to the top surface of the substrate; a peripheral structure located above the peripheral region and including peripheral stacked layers, peripheral circuits located above the peripheral stacked layer, and peripheral leads located above the peripheral circuits, one end of each peripheral lead being electrically connected with at least one of peripheral circuits, and the other end being electrically connected with at least one of signal lines.

Abstract: A semiconductor package includes a lower encapsulated semiconductor device, a lower redistribution structure, an upper encapsulated semiconductor device, and an upper redistribution structure. The lower redistribution structure is disposed over and electrically connected to the lower encapsulated semiconductor device. The upper encapsulated semiconductor device is disposed over the lower encapsulated semiconductor device and includes a sensor die having a pad and a sensing region, an upper encapsulating material at least laterally encapsulating the sensor die, and an upper conductive via extending through the upper encapsulating material and connected to the lower redistribution structure. The upper redistribution structure is disposed over the upper encapsulated semiconductor device. The upper redistribution structure covers the pad of the sensor die and has an opening located on the sensing region of the sensor die.

Abstract: A semiconductor device includes a semiconductor substrate, a first device, a second device, and a composite isolation structure. The first device includes a first fin structure and a first gate structure. The first fin structure is disposed over the semiconductor substrate and includes a first channel region. The first gate structure wraps around the first channel region. The second device includes a second fin structure and a second gate structure. The second fin structure is disposed over the semiconductor substrate and includes a second channel region. The second gate structure wraps around the second channel region. The composite isolation structure is disposed between the first and second devices and includes first and second dielectric layers. The second dielectric layer is sandwiched between the semiconductor substrate and the first dielectric layer. A topmost surface of the second dielectric layer is lower than a bottom surface of the first channel region.

Abstract: A method, apparatus, non-transitory computer readable medium, apparatus, and system for image processing include obtaining a text prompt and an input image depicting a person, generating a latent code based on the text prompt and the input image, wherein the latent code is optimized by an identity preserving loss, and generating, using an image generator of a machine learning model, a synthetic image based on the latent code, wherein the synthetic image includes an element of the text prompt and preserves an identity of the person in the input image.

Abstract: A display device includes a driving element layer on a substrate, a wiring layer on the driving element layer and including a power supply wiring, and a light emitting element layer disposed on the wiring layer. The light emitting element layer includes a pixel defining layer defining openings for pixels, a first electrode in each opening, a heating wiring on the pixel defining layer around each opening, a connection electrode connecting the heating wiring and the power supply wiring through a contact hole extending through the wiring layer and the pixel defining layer, an intermediate layer covering the first electrode in the pixels and the pixel defining layer between the pixels, and including a disconnected portion on the pixel defining layer adjacent to the heating wiring, and a second electrode continuously disposed on the intermediate layer in the openings for the pixels and between the pixels.

Abstract: The present application provides a respiration feature extraction method based on body surface significance analysis, including: establishing a body surface voxel model of chest and abdomen respiration motion, which includes acquisition of point cloud information, generation of the voxel model and extraction of respiration motion features; establishing a significance evaluation function by performing significance analysis on different regions of a body surface, and selecting the body surface region with high correlation with tumor motion based on the evaluation function; and performing voxelization on the body surface region, and obtaining effective one-dimensional characterization information of the body surface region using a local linear embedding dimension reduction algorithm.

Abstract: Systems and methods are provided for generating electronic renderings using feature layers. A set of sample electronic renderings can be generated for a virtual space based on feature data (e.g., including a set of features of the virtual space). Rendering data can be determined based on the set of sample electronic renderings, wherein the rendering data includes a set of feature layers, and wherein each feature layer is associated with at least one feature of the set of features. A rendering request can be received, the rendering request including a subset of features and associated feature parameters selected from the set of features as selected feature data, and an electronic rendering can be generated of the virtual space based on the selected feature data and one or more of the feature layers.

Abstract: Techniques for rendering a scene are disclosed. In some embodiments, a scene definition is modified to generate a modified scene definition based at least in part on a current state of a local database at a device. The modified scene definition is constrained to include references to objects locally available in the local database, and at least one object referenced in the scene definition is substituted with a different object in the modified scene definition that is locally available in the local database. The scene is rendered at the device according to the modified scene definition.

Abstract: A package structure includes a circuit substrate and a semiconductor device. The semiconductor device is disposed on and electrically connected to the circuit substrate. The semiconductor device includes an interconnection structure, a semiconductor die, an insulating encapsulant, a protection layer and electrical connectors. The interconnection structure has a first surface and a second surface. The semiconductor die is disposed on the first surface and electrically connected to the interconnection structure. The insulating encapsulant is encapsulating the semiconductor die and partially covering sidewalls of the interconnection structure. The protection layer is disposed on the second surface of the interconnection structure and partially covering the sidewalls of the interconnection structure, wherein the protection layer is in contact with the insulating encapsulant.

Abstract: A method for checking tyres includes: arranging, at a checking device, a finished tyre that was moulded in a mould, and providing comparison data inclusive of a drawing of the mould and supplementary data. The method also includes: activating one or more detection devices to obtain a graphic representation of at least one sidewall of the finished tyre; activating a processing unit to perform a comparison between symbols included in the graphic representation and symbols defined by the comparison data; and generating, by the processing unit, a notification signal representative of a result of the comparison. A tyre checking apparatus is also described.

Abstract: A transistor comprises a layered semiconductor structure electrically connected to a plurality of electrodes forming a source, a gate, and a drain of the transistor. The layered semiconductor structure includes a channel layer having a shape formed by a set of fins, and a barrier layer on the channel layer such that the barrier layer coats the fins of the channel layer to define a shape formed by a series of wells. The series of wells of the barrier layer are interdigitated with the series of fins of the channel layer. The barrier layer is formed with polar piezoelectric material having a first lattice constant and the channel layer is formed with polar material having a second lattice constant, where the second lattice constant is greater than the first lattice constant.

Abstract: Split applications and virtual objects in a multi-user communication session may include presenting, for a first device, a first environmental representation of the multi-user communication session, wherein the first device and the second device are active in the multi-user communication session, and wherein the first environmental representation and a second environmental representation of the multi-user communication session for the second device comprise one or more shared virtual objects presented in a common spatial configuration; duplicating a particular shared virtual object that is located at an initial location in the common spatial configuration; determining a modified location for the duplicated virtual object in the first environmental representation; and presenting a modified first environmental representation comprising the duplicated virtual object at the modified location.

Abstract: Provided is an information processing device according to an aspect of the present disclosure that includes a transmission processing unit, a reception processing unit, and a presentation processing unit. The transmission processing unit transmits, in remote communication performed between a plurality of points distant from each other, first motion information indicating a bodily motion of a user to a user at another point. The reception processing unit receives second motion information indicating a bodily motion of the user at the other point. The presentation processing unit controls, in presenting information in which a situation of the user at the other point is reproduced based on the second motion information, presentation content based on a situation in which the second motion information is acquired.

Abstract: A semiconductor package includes a package substrate, a first semiconductor chip on the package substrate, a sealing layer on the package substrate and at least partially covering the first semiconductor chip and including an upper surface, a first side surface, and a first inclined surface extending between the upper surface and the first side surface, and a first marking pattern in or on the first inclined surface of the sealing layer.

Abstract: A nanosheet semiconductor structure including a backside cut dielectric physically separating an NFET source drain region from a PFET source drain region, where a first portion of the backside cut dielectric contacts a source drain contact and a second portion of the backside cut dielectric contacts a gate.

Abstract: The present description concerns an electronic device comprising a semiconductor substrate, transistors having their gates contained in first trenches extending in the substrate, and at least one electronic component, different from a transistor, at least partly formed in a first semiconductor region contained in a second trench extending in the semiconductor substrate parallel to the first trenches.

Abstract: A wiring substrate has a first wiring substrate, plurality of second wiring substrates, and an adhesive layer. The plurality of second wiring substrates are arranged adjacent to each other on the first wiring substrate. The adhesive layer adheres the first wiring substrate and the plurality of second wiring substrates to each other. The adhesive layer has a filling portion that fills a groove portion formed by opposing of side surfaces of adjacent ones of the plurality of second wiring substrates.