Abstract: A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.

Abstract: A laser apparatus includes a chamber accommodating a pair of discharge electrodes, a gas supply and exhaust device configured to supply laser gas to an interior of the chamber and exhaust laser gas from the interior of the chamber, and a controller. The controller performs first control to control the gas supply and exhaust device so as to suspend laser oscillation and replace laser gas in the chamber at every first number of pulses or first elapsed time, and second control to control the gas supply and exhaust device so as to suspend laser oscillation and replace laser gas in the chamber before the first control at every second number of pulses less than the first number of pulses or second elapsed time less than the first elapsed time.

Abstract: An emitter package can include: a body having a bottom member, side members extending from the bottom member, and a top surface, wherein the body defines a cavity formed into the top surface and located between the bottom member and side members; the cavity having top side walls extending from the top surface to optic shelves, middle side walls extending from the optic shelves to contact shelves, and bottom side walls extending from the contact shelves to a base surface; electrical conductive pads on the base surface in the cavity; emitter chips on the electrical conductive pads, each emitter chip having one or more light emitters; shelf contact pads on the contact shelves; and electrical connector wires connected to and extending between the emitter chips and the shelf contact pads.

Abstract: A planar waveguide laser crystal assembly includes an optical bench and a laser crystal mount mounted on the optical bench. The laser crystal mount includes an upper housing having an interior horizontal surface and an exterior horizontal, a lower housing coupled to the upper housing and having an interior horizontal surface and an exterior horizontal surface, and a cavity defined between the interior horizontal surfaces of the upper and lower housings. A laser crystal is mounted in the cavity of the laser crystal mount. Each of the exterior horizontal surfaces of the upper and lower housings is oriented parallel to a length of the laser crystal. The laser crystal assembly further includes a heat dissipating structure thermally coupled to at least one of the exterior horizontal surfaces of the upper and lower housings to dissipate heat transferred from the laser crystal mount.

Abstract: A laser apparatus according to the present disclosure includes: a laser chamber including a pair of electrodes and configured to emit, at each of a plurality of pulse repetition frequencies, a pulse laser beam having a pulse energy corresponding to a voltage applied between the electrodes; an energy detector provided on an optical path of the pulse laser beam and configured to detect the pulse energy of the pulse laser beam; a voltage control unit configured to control the applied voltage based on a target pulse energy and the pulse energy detected by the energy detector; and a pulse energy control unit configured to periodically vary the target pulse energy at a modulation frequency corresponding to each of the pulse repetition frequencies with a reference energy being a center of variation.

Abstract: An edge-emitting laser includes an active gain section and a reflector section optically coupled to the active gain section. The active gain section is configured to amplify an optical power of light across a wavelength range. The reflector section is configured to selectively reflect light of a selected wavelength within the wavelength range. The selected wavelength is tunable via high-frequency index modulation of the reflector section. The active gain section and the reflector section collectively form an optical cavity configured to lase coherent light in the selected wavelength.

Abstract: A laser apparatus includes: a master oscillator for emitting a laser beam; an amplifier on an optical path of the laser beam; a beam splitter between the master oscillator and the amplifier for separating, from the optical path of the laser beam, at least part of a return beam traveling through the optical path of the laser beam in a direction opposite to a traveling direction of the laser beam; a focusing optical system for focusing the return beam separated from the optical path; and an optical sensor having a light receiving surface for the return beam for detecting information on power of the return beam entering the light receiving surface through the focusing optical system, the light receiving surface being arranged at a position different from a focusing position of the focusing optical system on the optical path of the return beam.

Abstract: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Abstract: There is provided an optical module comprising a semiconductor laser element; and a planar lightwave circuit (PLC) in which a waveguide is formed on a substrate. A position of a light-emitting point of the semiconductor laser element is approximately aligned with a position of a core of the waveguide. In a plan view, a first line segment representing an emission surface of the semiconductor laser element and a second line segment corresponding to the first line segment and representing an incident surface of the waveguide are arranged oblique to each other, and the light-emitting point of the semiconductor laser element is disposed closer to an intersection point of an extension line of the first line segment and the second line segment or an extension line of the second line segment than a center of the first line segment.

Abstract: An apparatus includes an optical fiber configured to transport an optical signal. A cross-section of the optical fiber has a longer slow-axis dimension and a shorter fast-axis dimension. The optical fiber includes a core configured to receive and amplify the optical signal, end features optically coupled to the core at opposite ends of the core, and a cladding surrounding the core and end features. The core has a height in the slow-axis dimension and a width in the fast-axis dimension. Each end feature has a height in the slow-axis dimension and a width in the fast-axis dimension. The core has a lower bend loss than the end features. The optical fiber is configured to confine optical power of a fundamental mode in the core and allow optical power of higher-order mode(s) to leak from the core into the end features. Each end feature's height is less than the core's width.

Abstract: A laser projection module, that may include a laser projection module cover comprising a top portion, a bottom portion and a one or more of side portions to define a cavity within the cover, wherein the top portion is configured to couple an optical lens. A lead frame may be at least partially integrated into the bottom cover portion of the laser projection module, where the lead frame includes an outer lead frame portion and an inner lead frame portion relative to the cover, wherein the inner lead frame portion is configured to couple a laser diode assembly in one area of the inner lead frame portion within the cavity.

Abstract: A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (?m) to 100 ?m and may include a DFB grating with a first kappa in a range from 100 cm?1 to 150 cm?1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 ?m. The DBR region may include a DBR grating with a second kappa in a range from 150 cm?1 to 200 cm?1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

Abstract: A Pockels cell utilizes high-voltage pulses for a polarization adjustment of electromagnetic radiation passing through the crystal, in particular laser radiation. The polarization adjustment involves applying a sequence of useful voltage pulses (N) to the crystal, each having a useful period duration (TP, N) and a useful pulse width (TN), and induces birefringence of the crystal via electric polarization in the crystal for polarization adjustment of the electromagnetic radiation. A sequence of compensation pulses (K, K1, K2) are applied to the crystal, each having a voltage curve, wherein the sequence is temporally overlaid by the sequence of useful voltage pulses (N) so that the voltage curves of the compensation pulses (K, K1, K2) counteract the inducing of a mechanical vibration in the crystal of the Pockels cell by the useful voltage pulses (N).

Abstract: A method for generating stabilized, pulsed laser radiation is disclosed, the method including at least the steps of generating pulsed laser radiation at a repetition frequency, wherein the spectrum of the pulsed laser radiation is a frequency comb having a number of equidistant spectral lines; deriving a first controlled variable from the pulsed laser radiation by means of phase comparison with a high-frequency reference signal; generating narrow-band continuous-wave laser radiation at a reference wavelength; setting the reference wavelength in accordance with a first manipulated variable derived from the first controlled variable; deriving a second controlled variable by means of superposition of the pulsed laser radiation and the continuous-wave laser radiation; and setting the repetition frequency in accordance with a second manipulated variable derived from the second controlled variable. A device for generating stabilized, pulsed laser radiation compatible with the method is also disclosed.

Abstract: The present disclosure relates to optical systems and methods for their manufacture. An example method includes coupling a first surface of a light-emitter substrate to a reference surface of a carrier substrate. The method also includes registering a mold structure with respect to the reference surface of the carrier substrate. Furthermore, the method includes using the mold structure to form an optical material over at least a portion of the light-emitter substrate. The optical material is shaped according to a shape of the mold structure and includes at least one registration feature. The method also includes coupling an optical lens element to the optical material such that the optical lens element is registered to the at least one registration feature.

Abstract: A method of producing an optoelectronic lighting device includes providing a laser chip carrier on which two edge emitting laser chips, arranging a carrier including two optical elements onto the laser chip carrier, forming a respective optical connection by an optical material between a respective laser facet and a respective optical element, singulating the two laser chips by dividing the laser chip carrier between the two laser chips to form two mutually divided laser chip carrier parts, wherein the dividing includes dividing the carrier between the two optical elements to form two mutually divided carrier parts each including one of the two optical elements, such that two singulated laser chips arranged on the respective divided laser chip carrier part are formed, the respective laser facets of which are optically connected to the respective optical element of the respective carrier part by the optical material.

Abstract: A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P+ electrode layer divided into two segments and made on the waveguide layer and N+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.

Abstract: A light-emitting device includes a substrate including a photonic cavity and configured to function as a gate, an active layer including a two-dimensional material, a first conductive contact, and a second conductive contact. The wavelength range of light generated by the light-emitting device may be narrowed based on the photonic cavity being included in the substrate, and the intensity and wavelength range of the generated light may be controlled based on the substrate functioning as a gate.

Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material.

Abstract: An optical apparatus is provided for an optical transceiver. The optical apparatus includes an interposer, a glass lens chip bonded to the interposer, and a plurality of bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) flip chipped to the interposer. Each of the bottom-emitting VCSELs is fabricated on a respective substrate, at least one bottom-emitting VCSEL is capable of emitting an optical signal having a wavelength of about 850 nm, and at least a portion of the respective substrate on which the at least one bottom-emitting VCSEL is fabricated is removed to permit the at least one bottom-emitting VCSEL to emit the optical signal having the wavelength of about 850 nm to the glass lens chip.