Abstract: A laser diode driver includes a clock terminal to receive a clock signal, configuration terminals to receive configuration data, drive terminals, and charging terminals. A first charging terminal is operable to charge a source capacitor of a resonant circuit that includes the source capacitor, an inductor, and a bypass capacitor. Each drive terminal is operable to be directly electrically connected to an anode or cathode of a laser diode or to ground. A mode, output selection, and grouping of drive signals that are delivered to the laser diodes are configured based on the configuration data. The laser diode driver is operable to control a current flow through the resonant circuit to produce high-current pulses through the laser diodes, the high-current pulses corresponding to a peak current of a resonant waveform developed at respective anodes of the laser diodes, a timing of the high-current pulses being synchronized using the clock signal.

Abstract: An embodiment discloses a vertical cavity surface emitting laser including a substrate, a lower reflective layer disposed on the substrate, a laser cavity including an active layer and disposed on the lower reflective layer, an oxide layer disposed on the laser cavity, an upper reflective layer disposed on the oxide layer, a plurality of first holes formed in the upper reflective layer and the oxide layer, and an upper electrode disposed on inner sides of the plurality of first holes and disposed on the upper reflective layer, wherein the oxide layer includes a plurality of light emitting regions spaced apart from each other, and the plurality of first holes are disposed to surround each of the light emitting regions in a plan view.

Abstract: A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity.

Abstract: The present invention is directed to an ultra-compact dual quantum cascade laser assembly that nearly doubles the strength of a traditional laser in a in a single hermetically sealed micropackage. The device may comprise two quantum cascade lasers that meet at a combiner to create a single laser with a higher strength than traditional lasers. The current invention provides a path to an ultra-compact coherent beam combing arrangement that uses both dichroic beam combining and polarization beam combining techniques.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

Abstract: Provided is an element structure includes a heat dissipation member and a support member provided on the heat dissipation member. The support member includes a first mount material, a stress relaxation layer, and a second mount material in a stacking direction. The element structure further includes a functional element provided on the support member.

Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

Abstract: The present disclosure provides an optical member for use in a laser module that includes a surface emitting laser, the optical member being capable of detecting damage (cracking, peeling, and the like), a method for manufacturing the optical member, a laser module including the optical member, and a laser device.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, and a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer.

Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

Abstract: A light emitting device is provided including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.

Abstract: The invention relates to an athermalized device for generating laser radiation that is focused in a focal point, comprising a lens and a plastic housing and a passive adjustment system for adjusting the object distance S1. The passive adjustment device has an effective coefficient of thermal expansion (I) ? V = s 1 f · [ ? L - 1 n - 1 · ( ? n ? ? · d ? ? ? dT + ? n ? T ) ] + ? 2 · ( 1 - s 1 f ) .

Abstract: A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity N×M coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the N×M coupler and the optical amplifiers can be used to adjust an amount of power output from M?1 ports of the N×M coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

Abstract: An electronic device according to a present disclosure includes a semiconductor substrate, a chip, and a connection part. The chip has a different thermal expansion rate from that of the semiconductor substrate. The connection part includes a porous metal layer for connecting connection pads that are arranged on opposing principle surfaces of the semiconductor substrate and the chip.

Abstract: A housing for an electronic component, in particular for a laser diode, is provided. The housing includes a mounting area for the electronic component and has a lateral wall provided with a feedthrough for a light guide. The base wall of a basic body of the housing has both a heat sink for a thermoelectric cooler and a plurality of feedthroughs for pins for electrically connecting the electronic component.

Abstract: A vertical cavity surface emitting laser (VCSEL) die package includes a bottom substrate comprising a bottom contact pad electrically contacting a bottom electrode on a bottom surface of a VCSEL die. The VCSEL die package includes a submount including a submount contact pad electrically contacting a first electrode on another surface of the VCSEL die. The submount contact pad overlaps a portion of the first electrode, wherein the VCSEL die is positioned between the submount and the bottom substrate.

Abstract: An amplifier assembly may include a first heat sink plate that includes a first channel, a second heat sink plate that includes a second channel, and an amplifier rod disposed in the first channel and the second channel. The second heat sink plate may be connected with the first heat sink plate such that the first channel and the second channel align. The amplifier rod may be connected to the first heat sink plate and the second heat sink plate by a non-eutectic solder.

Abstract: Laser systems and methods are disclosed. One laser system comprises: a plurality of laser resonators, each resonator being operable to discharge an input laser beam; a relay assembly including at least one curved reflective surface that redirects each input laser beam, and reduces a beam size of the redirected beam; a galvo including a curved reflective surface that receives each redirected beam, and outputs a combined laser beam at power level greater than a power level of each laser input beam; and a coupling assembly that reduces spherical aberrations in the combined laser beam, and directs the combined laser beam into an optical fiber. In this system, the combined laser beam may have a maximum beam parameter product lower than a minimum beam parameter product of the optical fiber. Related systems and methods are also disclosed.