Abstract: An invention providing a scanning electron microscope composed of a monochromator capable of high resolution, monochromatizing the energy and reducing chromatic aberrations without significantly lowering the electrical current strength of the primary electron beam. A scanning electron microscope is installed with a pair of sectorial magnetic and electrical fields having opposite deflection directions to focus the electron beam and then limit the energy width by means of slits, and another pair of sectorial magnetic and electrical fields of the same shape is installed at a position forming a symmetrical mirror versus the surface containing the slits. This structure acts to cancel out energy dispersion at the object point and symmetrical mirror positions, and by spatially contracting the point-converged spot beam with a converging lens system, improves the image resolution of the scanning electron microscope.

Abstract: An improved sample introduction probe is disclosed for the production of ions from liquid sample solutions in an electrospray ion source. Nebulization of a liquid sample emerging from the end of an inner flow tube is pneumatically assisted by gas flowing from the end of an outer gas flow tube essentially coaxial with the inner sample flow tube. The disclosed probe provides for adjustment of the relative axial positions of the ends of the liquid and gas flow tubes without degrading the precise concentricity between the inner and outer tubes. Additionally, the terminal portion of the outer gas flow tube may be fabricated either from a conductive or dielectric material, thereby allowing the pneumatic nebulization and electrospray processes to be optimized separately and independently. Hence, the disclosed invention provides a pneumatically-assisted electrospray probe with improved mechanical and operational stability, reliability, reproducibility, and ease of use compared to prior art probes.

Abstract: A method of preparing a sample for examination in a TEM, where the sample is attached to a probe tip point, uses a TEM sample holder form embodied in a TEM sample holder coupon. The probe-tip points and the TEM sample holder coupon are oriented with each other so that the sample is approximately centered in the TEM sample holder form. The probe-tip points are embedded in the TEM sample holder form by means of a press, simultaneously cutting off that portion of every probe-tip point outside the boundary of the TEM sample holder form and cutting the TEM sample holder free from the TEM sample holder coupon. The operation can be formed inside or outside of a focused ion-beam instrument.

Abstract: An infrared identification device includes a light emitting panel member that receives light from an infrared light source for conduction within the panel member and emission from a light emitting surface area on one side of the panel member, which is relatively easy to detect at night when viewed through night vision equipment. The device may be capable of functioning in an interrogation mode, allowing the device to be activated remotely by a predetermined signal frequency, code signal or pulse signal and send out a signal response.

Abstract: A method for processing ions in mass spectrometry is provided. The method provides for processing ions in a ion processing cell having elongated segmented rods, a circuit for applying RF voltages and a circuit for applying DC voltage selectively to the segments of the segmented rods. The method comprises applying an RF field to the elongated volume, applying DC voltage selectively to the segments to form a plurality of potential regions having discrete potentials; providing analyte ions to a first potential region and processing at least a portion of the analytes in the first potential region. In one embodiment, the potential region is a potential well.

Abstract: A method and an apparatus are for three-dimensional tomographic image generation in a scanning electron microscope system. At least two longitudinal marks are provided on the top surface of the sample which include an angle therebetween. In consecutive image recordings, the positions of these marks are determined and are used to quantify the slice thickness removed between consecutive image recordings.

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions. Concept as expressed herein.

Abstract: A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM1, CM2), and a boundary lens (Lb) whose surface on the first surface side has a positive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1.

Abstract: Embodiments of a radiation shield are disclosed. One non-limiting embodiment of the radiation shield may comprise a first layer, a second layer, and a third layer. The first layer may include a neutron moderating material. The second layer may be adjacent the first layer and may include a neutron absorbing material. The third layer may be adjacent the second layer, and may include a photonic radiation attenuating material. At least the first layer and the second layer may be removable from the radiation shield.

Abstract: A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.

Abstract: A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM1, CM2), and a boundary lens (Lb) whose surface on the first surface side has a positive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: Thermoplastic compositions that reflect ultraviolet light are provided herein, along with articles of manufacture and methods of fluid purification using the same. The thermoplastic compositions preferably comprise a suitable thermoplastic material and microparticles of UV reflective material, such as aluminum or stainless steel. The thermoplastic compositions are useful, for example, in forming articles of manufacture comprising a UV reflective surface that are suitable for use in a water treatment system in connection with a UV light source.

Abstract: A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Abstract: A method of producing electron beam writing data in which a figure cell contained in the cell-based device pattern in electron beam lithography of character projection scheme is extracted as a character pattern is disclosed. The method comprises removing an overlap of pattern data included in the figure cell, producing a character pattern cutting frame from a cell allocation frame in the figure cell, assigning a figure inside of the produced character pattern cutting frame to a pattern to be shot in a character projection scheme as a character pattern, defining a figure outside of the character pattern cutting frame as a non-character pattern, removing an overlap between an adjacent pattern and the non-character pattern, and assigning a portion of the non-character pattern, which is not overlapped on the adjacent pattern to a pattern to be shot in a variable shaping beam scheme.

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: A lithographic apparatus is presented that provides versatile processing time and accuracy selection. The apparatus includes a substrate holder configured to hold a substrate; a radiation system configured to condition a beam of radiation; a support structure configured to support a patterning device that imparts a desired pattern onto the beam of radiation; a projection system that projects the patterned beam onto a target portion of the substrate; and a selection system that selects one out of at least two different operational modes of the lithographic apparatus. The first operational mode is associated with performing a process within a first time period at a first level of accuracy and a second operational mode is associated with performing the process within a second time period at a second level of accuracy. The first time period is shorter than the second time period and the first level of accuracy is lower than the second level of accuracy.

Abstract: In a scanning electron microscope, an emitted primary electron beam is diverted by an angle of at least about 45 degrees prior to incidence with a specimen. The beam may be bent by a magnetic separator. The separator may also serve to deflect secondary electron and back scattered electrons. As the angle of emissions and reflections from the specimen is close to the angle of incidence, bending the primary electron beam prior to incidence, allows the electron source to be located so as not to obstruct the travel of emissions and reflections to suitable detectors.

Abstract: The invention related to a radiation protection arrangement for screening radiation emitted from a radiation source, especially an x-ray source. Said arrangement is provided with a screening element consisting of, or comprising, a radiation protection material, and a cover, which fully surrounds the screening element. Said cover can be pulled over the screening element and completely separated from the same. As the cover can be changed, the radiation protection arrangement can be kept clean and sterile in a simple manner.

Abstract: The invention provides a fine-adjustment mechanism for a scanning probe microscopy with high rigidity and high degree of measurement accuracy wherein a strain gauge displacement sensor which can be installed in a small space is arranged so that temperature compensation is achieved. The fine-adjustment mechanism composed of a piezoelectric device is provided with at least two-piece electrode. One of the electrodes is configured as a dummy electrode, to which no voltage is applied, and the other electrode is configured as an active electrode which generates strain when voltage is applied. One or two resistors are provided on each of the active electrode and dummy electrode, and a bridge circuit is configured by the resistors.