Abstract: A chamber suitable for use with a scanning electron microscope. The chamber comprises at least one aperture sealed with a membrane. The membrane is adapted to withstand a vacuum, and is transparent to electrons and the interior of the chamber is isolated from said vacuum. The chamber is useful for allowing wet samples including living cells to be viewed under an electron microscope.

Abstract: An improved ion source for collecting and focusing dispersed gas-phase ions from a reagent source at sub-atmospheric or intermediate pressure, having a remote source of reagent ions separated from a low-field sample ionization region by a barrier, comprised of alternating laminates of metal and insulator, populated with a plurality of openings, wherein DC potentials are applied to each metal laminate necessary for transferring reagent ions from the remote source into the low-field sample ionization region where the reagent ions react with neutral and/or ionic sample forming ionic species. The resulting ionic species are then introduced into the vacuum system of a mass spectrometer or ion mobility spectrometer. Embodiments of this invention are methods and devices for improving sensitivity of mass spectrometry when gas and liquid chromatographic separation techniques are coupled to sub-atmospheric and intermediate pressure photo-ionization, chemical ionization, and thermal-pneumatic ionization sources.

Abstract: A device couples energy from an electromagnetic wave to charged particles in a beam. The device includes a micro-resonant structure and a cathode for providing electrons along a path. The micro-resonant structure, on receiving the electromagnetic wave, generates a varying field in a space including a portion of the path. Electrons are deflected or angularly modulated to a second path.

Abstract: One embodiment described relates to a method of electron beam imaging of a target area of a substrate. An electron beam column is configured for charge-control pre-scanning using a primary electron beam. A pre-scan is performed over the target area. The electron beam column is re-configured for imaging using the primary electron beam. An imaging scan is then performed over the target area. Other embodiments are also described.

Abstract: A control system (12) for a power supply (14), such as a high voltage power supply, includes a control circuit (16) and a feedback circuit (18, 28, 30). The feedback circuit (18, 28, 30) is configured to produce a feedback signal indicative of the voltage of the power supply output. The control circuit (16) is configured to control the power supply (14) based on the feedback signal and a predetermined voltage value to maintain the output of the power supply (14) at about the predetermined voltage value. A portion of the feedback circuit (18, 28, 30) may be included in an isolation shield (88) to improve the accuracy of the feedback signal.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

Abstract: An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.

Abstract: A temperature adjustment apparatus for adjusting the temperature of an optical member includes a first radiation mechanism, with a first radiation member, that transfers the radiation heat between a predetermined area of the optical member and for adjusting the temperature of the optical member by the first radiation member; and a shielding member for reducing radiation heat transferred to an area other than the determined area among the radiation heat from the first radiation member.

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

Abstract: Provided is an electron beam apparatus in which an electron beam emitted from an electron gun is separated by a plurality of apertures, images of said apertures are reduced in more than two stages to form multi-beams on a sample surface and to scan said sample thereby, and secondary electrons from said sample are passed through an objective lens, where distances between said secondary electrons are extended, further through an E×B separator, where said secondary electrons are separated from the primary beam, and finally onto secondary electron detectors, where said secondary electrons are detected, wherein a lens defined in the second step for reducing said image of the aperture is composed of two stage lens and an enlarged image of the secondary electron is formed on a position between a first and a second lenses of said two stage lens, thereby reducing an aberration of the optical system for detecting the secondary electrons and allowing as many multi-beams as possible to be formed in the vicinity of a sing

Abstract: A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion.

Abstract: There is disclosed an electron microscope equipped with a magnetic microprobe. The microscope can apply a strong electric field to a local area on a specimen made of a magnetic material. The magnetic flux density per unit area of the microprobe is high. The microscope includes a biprism for producing interference between an electron beam transmitted through the specimen and an electron beam passing through a vacuum. The specimen is held to a holder. The microprobe is made of a magnetic material and has a needle-like tip. The microscope further includes a moving mechanism capable of moving the microprobe toward and away from the specimen.

Abstract: The present invention is directed to a bipolar ion detector capable of detecting both positive and negative ions in a single configuration. The invention uses either a single microchannel plates or a stack of microchannel plates to convert the ion signal into an amplified electron signal. Circuitry allows the anode to be biased (floated) to a positive high voltage and efficiently couple the signal from the anode out to recording electronics at ground.

Abstract: Disclosed herein are systems, methods and apparatus, for detection and identification of analytes in a volatilized or volatilizable sample, using the mobility-based signature that is produced when the volatilized sample is passed through an ion mobility based analyzer.

Abstract: Disclosed herein is a device for holding a substrate having one or more samples in a position for ionizing the samples with a light energy source. The device has a receiving plate with a receiving surface, a back surface and an edge defining an outline. One or more receiving lips project from the receiving surface. The receiving surface receives the back face of the substrate with at least one edge received by the receiving lips for positioning the substrate for ionization of the sample. The device also has at least one substrate clip that has a front finger and a back finger for capturing and aligning the substrate. The front finger extends across the thickness of the receiving plate and substrate to engage the front edge of the substrate to hold the substrate in position. The back finger engages the back surface of the receiving plate. The receiving plate cooperates with the space in a matrix assisted laser desorption ionization mass spectrometer to hold the samples in position for ionization.

Abstract: A device for adjusting a beam of charged particles. The device includes an adjustment mechanism for storing desired characteristics for the beam, determining values of adjustment parameters of the apparatus according to its characteristics, storing these values, and giving these stored values to the adjustment parameters of the apparatus. The device can be applied in particular to the manufacturing of nanostructures.

Abstract: A metal ion emission device for emitting a metal ion by applying voltage to a molten liquid metal includes a needle-like part having an internal opening in which the liquid metal can be moved. The needle-like part has a first opening for supplying the liquid metal to the opening and a second opening for emitting the liquid metal as a metal ion.

Abstract: A device comprising an energy selecting slit assembly is provided. The slit assembly comprising a slit assembly chassis, opposing slit mechanisms, and an actuator assembly. One of the terminal ends of the actuator arm comprises a relatively fixed terminus, while the other terminal end of the arm comprises a relatively mobile terminus coupled to the rotational slit mechanism via a mechanical coupling configured to translate movement of the mobile terminus into rotational of the rotational slit mechanism. In one embodiment of the present invention, the slit assembly chassis defines a plurality of fixturing datums configured to establish alignment of respective aperture-defining edges of the opposing slit mechanisms along orthogonal X, Y, and Z axes defined by the chassis. Additional embodiments are disclosed.

Abstract: In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

Abstract: A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.