Abstract: A user equipment (UE) transmits reference signals for positioning while in Idle or Inactive state. While in a connected state, the UE is pre-configured with Sounding Reference Signal (SRS) resource configuration including at least one of timing adjustment (TA) and an uplink (UL) transmission spatial filter. The UE transmits positioning SRS while in Idle or Inactive mode based on the pre-configuration. The TA and UL transmission spatial filter may be updated by a serving base station using control signals or a paging message received by the UE while in in Idle or Inactive mode. The validity of the TA and UL transmission spatial filter may be monitored using expiration timers or a relative position change threshold. The reference signals transmitted may be based on a UE may Physical Random Access Channel (PRACH), which is insensitive to TA changes. A long sequence PRACH may be used for improved positioning accuracy.

Abstract: A system and method for real-time or near real-time anomaly detection and root cause automation in production environments or in other environments using shrunk dynamic call graphs are provided. The system includes an instrumentation agent that generates shrunk dynamic call graphs and exceptions/errors by injecting monitoring code or probes or call-tags into monitored application, a data agent that forwards collected data to the analysis engine over a network, an analysis engine that performs continuous clustering using machine learning, anomaly, and root cause detection. The system also includes a reporting module to report the anomaly.

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Abstract: The present invention provides compounds of formula (I): wherein all of the variables are as defined herein. These compounds are inhibitors of indoleamine 2,3-dioxygenase (IDO), which may be used as medicaments for the treatment of proliferative disorders, such as cancer, viral infections and/or autoimmune diseases.

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material.

Abstract: An exemplary computing device includes a plurality of circuits and/or a plurality of in-situ monitors configured to generate outputs that indicate one or more operating conditions of the circuits. The computing device also includes a system management unit configured to detect a potentially faulty voltage-to-frequency ratio implemented by one of the circuits based at least in part on one or more of the outputs. The system management unit is also configured to modify the potentially faulty voltage-to-frequency ratio based at least in part on one or more of the outputs. Various other devices, systems, and methods are also disclosed.

Abstract: A positive temperature coefficient (PTC) heater apparatus is provided and includes a PTC heater and a health monitoring unit. The PTC heater includes resistive elements arranged in balanced groups of a bridge formation. Each of the balanced groups is arranged in a corresponding one of the arms of the bridge formation. The health monitoring unit is electrically connected to the resistive elements. The health monitoring unit is configured to determine a fault condition of the PTC heater based on a fractional change of resistance of the bridge formation caused by a failure of any one or more of the resistive elements in any of the balanced groups of the arms of the bridge formation.

Abstract: A positive temperature coefficient (PTC) heater apparatus is provided. The PTC heater apparatus includes a PTC heater, a resistance temperature detector (RTD) sensor mounted to the PTC heater and a controller logic unit electrically connected to the RTD sensor to receive readings of the RTD sensor, which, when the PTC heater is powered on, indicate whether the PTC heater is faulty.

Abstract: A method of characterizing cellular phenotypes includes receiving multi-parameter cellular and sub-cellular imaging data for a number of tissue samples from a number of patients or a number of multicellular in vitro models, performing cellular segmentation on the multi-parameter cellular and sub-cellular imaging data to create segmented multi-parameter cellular and sub-cellular imaging data, and performing recursive decomposition on the segmented multi-parameter cellular and subcellular imaging data to identify a plurality of computational phenotypes. The recursive decomposition includes a plurality of levels of decomposition with each level of decomposition including soft/probabilistic clustering and spatial regularization, and each cell in the segmented multi-parameter cellular and subcellular imaging data is probabilistically assigned to one or more of the plurality of computational phenotypes.

Abstract: A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.

Abstract: A method of forming a high-? dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-? dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-? dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-? dielectric cap layer, and removing the sacrificial silicon cap layer.

Abstract: Due to the proliferation of protected services that are secured by password wall, a user frequently has to remember multiple complex passwords. There is a need to reduce the number of passwords and maintain adequate security of the protected services. Systems described herein may autogenerate dynamic passwords for those apps that require a password. Protected services may allow user access based on the autogenerated dynamic password. The system may include an API for interacting with multiple apps that each provide protected services. The API may provide dynamic passwords that authenticate a user to access any of the protected services provided by any of the multiple apps.

Abstract: Embodiments of the disclosure advantageously provide methods of manufacturing semiconductor devices having multi-Vt capability in the scaled space between nanosheets in advanced GAA nodes. One or more embodiments provide an integration scheme to advantageously reduce the gate resistance by combining n-/p-dipole and mid-gap metal with low resistance to achieve desired work function and low-resistance metal gate. In one or more embodiments, a mid-gap metal is used to fill nanosheets and act as a liner for subsequent fill by a low resistance metal. After dipole engineering, instead of filling the gate-all-around nanosheet with traditional n or p metal, in one or more embodiments, the nanosheet is advantageously filled with a single work function mid-gap metal to achieve n and p work function. If the work function was shifted in either P-dipole or N-dipole bandedge after dipole engineering, the mid-gap materials can also shift the bandedge the opposite way.

Abstract: In some examples, a system includes a communication network having a cloud portion and an edge portion. The communication network comprises a cloud controller, a radio access network (RAN), and an edge computing device. The edge computing device is co-located with at least a portion of the RAN. The edge computing device is configured to, within one transmission time interval (TTI) of the RAN, obtain network state information of the communication network, determine control actions for modifying operational settings of the RAN, and transmit the control actions to the RAN.

Abstract: Some embodiments of the invention provide a method of detecting and remediating anomalies in an SD-WAN implemented by multiple forwarding elements (FEs) located at multiple sites connected by the SD-WAN. The method receives, from the multiple FEs, multiple sets of flow data associated with application traffic that traverses the multiple FEs. The method uses a first set of machine-trained processes to analyze the multiple sets of flow data in order to identify at least one anomaly associated with at least one particular FE in the multiple FEs. The method uses a second set of machine-trained processes to identify at least one remedial action for remediating the identified anomaly. The method implements the identified remedial action by directing an SD-WAN controller deployed in the SD-WAN to implement the identified remedial action.

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process.

Abstract: The present disclosure relates to methods and devices for wireless communication including an apparatus, e.g., a UE and/or a base station. In one aspect, the apparatus may determine an energy detection threshold of a reference bandwidth, the energy detection threshold being based on at least one of a transmit power or a power class. The apparatus may also measure an interference level of at least one signal. Additionally, the apparatus may adjust the energy detection threshold of the reference bandwidth based on a sensing bandwidth. The apparatus may also determine whether a transmission medium is available based on at least one of the adjusted energy detection threshold or the measured interference level of the at least one signal.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive, from a base station, a group identifier of the UE. The UE may receive, from the base station, an indication of one or more group identifiers associated with scheduled communications with the base station during a time period. The UE may contend, based at least in part on the group identifier of the UE and the one or more group identifiers received from the base station, for access to a set of autonomous uplink (AUL) resources during the time period. The UE may perform, based at least in part on the contending, an AUL transmission to the base station using the set of autonomous uplink resources.

Abstract: A method of managing positioning reference signal transmission includes: instructing a transmission point to apply a muting pattern regarding transmission of a reference signal including first and second reference signal resources, where a first instance of the first reference signal resource includes one or more first resource elements across one or more first OFDM symbols within a slot, and a second instance of the second reference signal resource includes one or more second resource elements across one or more second OFDM symbols within the slot; and instructing the transmission point to transmit, unmuted, at least one of the one or more second resource elements, of at least one of the one or more second OFDM symbols, despite the muting pattern indicating to mute transmission of the at least one of the one or more second resource elements of the at least one of the one or more second OFDM symbols.

Abstract: Methods, systems, and devices for wireless communications are described. A wireless device may identify, for an initial slot of a periodic interval, a number of symbols included in the initial slot and a length of cyclic prefixes used for the symbols included in the initial slot based on a subcarrier spacing that is configured for wireless communication. The length of a first set of cyclic prefixes may be based on a length of a cyclic prefix calculated for an initial symbol of the initial slot at the configured subcarrier spacing. The wireless device may perform communications based on the determined number of symbols and length of cyclic prefixes included in the initial slot. Performing communications may include allocating resources based on a length of the cyclic prefixes used for the symbols included in the initial slot.