Abstract: The present disclosure relates to methods, systems, and apparatuses for depositing films. In particular, a film is deposited using an atomic layer deposition process where some steps of the ALD process are performed at a temperature above a pyrolysis temperature of a film precursor.

Abstract: A formed fiber box for produce includes a base including a major axis and six spherical receivers arranged in a two-by-three grid. The three spherical receivers are disposed on each side of the major axis. Each of the spherical receivers includes an inner diameter of about 90 mm. A cylindrical cup extends from the bottom of each of the spherical receivers. A major axis wall is disposed along the major axis and defined by a first height H1 from a bottom surface of one of the cylindrical cups. A pair of transverse separation walls is disposed substantially orthogonal to the major axis. Each of the pair of transverse separation walls are defined by a second height H2 from the bottom surface of one of the cylindrical cups. The second height H2 is less than the first height H1. Each of the pair of transverse separation walls are disposed between adjacent pairs of spherical receivers. An intersection pillar is disposed at an intersection of the major axis wall and each of the transverse separation walls.

Abstract: The present disclosure relates to molded fiber formulations suitable for the automated, efficient, high-speed production of fiber-based containers, particularly for containers for use with produce such as apples. Fiber compositions are created as slurries to be used in the manufacture of molded fiber products. Embodiments of the fiber composition include a fiber base mixture of pulp and water, with some amount of a fiber substitute additive that is chemically compatible with the product to be stored in contact with the final molded fiber product. In an embodiment, apple pomace is a compatible fiber substitute for use in an apple container in that it is compatible with apples. Pomace is the pulp residue remaining after processing of fruit to extract its juice, e.g., by crushing, pressing.

Abstract: A showerhead comprises a first set of holes and a second set of holes. The first set of holes have a greater diameter and length than the second set of holes. The first set of holes extend through a thickness of the showerhead. In some embodiments, the showerhead includes a base portion and a cylindrical portion extending perpendicularly from the base portion. The base portion may define a plenum that is in fluid communication with the second set of holes but separate from the first set of holes. The second set of holes extend from the plenum to a bottom surface of the showerhead. In some implementations, the first diameter of the first set of holes may be optimized to filter ions from a plasma, pass radicals from the plasma through the showerhead, and to limit back-diffusion of precursors through the showerhead.

Abstract: A valve manifold for use in a semiconductor processing tool comprises a manifold body, a purge gas inlet, a process gas inlet, a manifold outlet, a divert outlet, a first valve interface, a second valve interface, and a third valve interface. The first valve interface and the third valve interface each includes a first port, and a second port. The second valve interface includes a first port, a second port, a third port, and a fourth port.

Abstract: Disclosed herein are systems and apparatuses for facilitating semiconductor processing operations involving the use of chlorine-containing and ammonia-containing gases. The systems and apparatuses discussed herein may provide enhanced wafer uniformity and/or may reduce the potential for undesirable, and potentially hazardous, reaction byproduct build-up in such systems.

Abstract: A remote plasma processing apparatus with an electrostatic chuck can deposit film on a semiconductor substrate by atomic layer deposition or chemical vapor deposition. The remote plasma processing apparatus can include a remote plasma source and a reaction chamber downstream from the remote plasma source. An RF power source can be configured to apply high RF power to the remote plasma source and heating elements can be configured to apply high temperatures to the electrostatic chuck. The semiconductor substrate can be dechucked from the electrostatic chuck using a declamping routine that alternates reversing polarities and reducing clamping voltages. In some embodiments, silicon nitride film can be conformally deposited by atomic layer deposition using a mixture of nitrogen, ammonia, and hydrogen gases as a source gas for remote plasma generation.

Abstract: Apparatuses not only capable of reducing unwanted radiative heat loss from a pedestal of a substrate processing system, but also capable of reducing radiative heat transfer to other components within a chamber of the substrate processing system.

Abstract: Multiple charge volumes (CVs) are used to supply a reactant and an inert gas at each processing chamber to perform atomic layer deposition (ALD) on substrates. A series of pulses of the reactant can be supplied at a high flow rate from two CVs during a dose step, which extends dose time. The inert gas can be supplied at an equal starting pressure from first and second CVs at first and second purge steps. A heated pulse valve manifold (PVM) minimizes temperature variations of process gases supplied from the PVM to respective processing chamber during ALD. The PVM preheats the process gases before the process gases enter the respective CVs in the PVM. The PVM includes additional supplemental heaters above and below the CVs to maintain the temperature of the process gases within the CVs. The PVM can be rapidly cooled before performing maintenance, which reduces downtime.

Abstract: A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.

Abstract: A showerhead for a processing chamber comprises a body having upper, lower, and side surfaces defining a plenum; and a plurality of through holes provided on the lower surface of the body. The plurality of through holes are in fluid communication with the plenum and the processing chamber. The showerhead comprises an inlet provided on one of the upper and side surfaces of the body and a first passage provided in the body. The first passage connects the inlet to the plenum. The showerhead comprises an outlet provided on one of the upper and side surfaces of the body and a second passage provided in the body. The second passage connects the outlet to the plenum.

Abstract: A showerhead comprises first, second, and third components. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The disc-shaped portion includes first and second sets of holes having first and second diameters, respectively, that extend from a center of the disc-shaped portion to an inner diameter of the cylindrical portion. The second component is disc-shaped and is attached to the disc-shaped portion of the first component, defines a plenum that is in fluid communication with the second set of holes, and includes a pair of arc-shaped grooves along a periphery and on opposite ends of the top surface and a plurality of grooves extending between the pair of arc-shaped grooves. The third component is disc-shaped, is attached to the second component, and includes a gas inlet connected to the plenum, and fluid inlet and outlet connected to the arc-shaped grooves.

Abstract: A computing system configured to execute instructions for a first graphical processing unit (GPU) on a second GPU is provided. The computing system may include the second GPU and a processor. The processor may be configured to receive second GPU state data that indicates one or more global properties of the second GPU. The processor may be further configured to receive one or more binary instructions for texture operation configured to be executed on the first GPU. Based on the second GPU state data, the processor may be further configured to apply a texture value patch to the one or more binary instructions. Applying the texture value patch may translate the one or more binary instructions into one or more translated binary instructions configured to be executed on the second GPU.

Abstract: The present invention comprises methods and compositions for the reduction of oxalate in humans, and methods for the purification and isolation of recombinant oxalate reducing enzyme proteins. The invention provides methods and compositions for the delivery of oxalate-reducing enzymes in particle compositions. The compositions of the present invention are suitable in methods of treatment or prevention of oxalate-related conditions.

Abstract: Examples described herein improve the quality of the video frames that are rendered and displayed. A system is configured to generate render targets based on instructions received from a source of video content. The system is configured to create and/or access a selection parameter and use the selection parameter to identify one or more of the render targets to be scaled. Once identified, the system scales a native size (e.g., a native resolution) of an identified render target to a larger size (e.g., based on a predetermined scaling factor), thereby generating a higher density render target. The higher density render target, or a corresponding higher density render target texture (RTT), can be used in a rendering pipeline to produce a video frame in a higher output resolution (e.g., 4k resolution) compared to the output resolution specified in the instructions (e.g., 720p resolution).

Abstract: According to one embodiment of the present disclosure, a computing system is provided, including a graphical processing unit (GPU) and a processor. The processor may be configured to execute a run-time executable cross-compiler to receive a GPU-executed program of a plurality of GPU-executed programs. The processor may be further configured to receive summary data associated with the GPU-executed program. The summary data may include a sequence in which the plurality of GPU-executed programs are configured to be executed. Based at least in part on the GPU-executed program and the summary data, the processor may be further configured to generate a translated GPU-executed program.

Abstract: Examples described herein improve the quality of the video frames that are rendered and displayed. A system is configured to generate render targets based on instructions received from a source of video content. The system is configured to create and/or access a selection parameter and use the selection parameter to identify one or more of the render targets to be scaled. Once identified, the system scales a native size (e.g., a native resolution) of an identified render target to a larger size (e.g., based on a predetermined scaling factor), thereby generating a higher density render target. The higher density render target, or a corresponding higher density render target texture (RTT), can be used in a rendering pipeline to produce a video frame in a higher output resolution (e.g., 4k resolution) compared to the output resolution specified in the instructions (e.g., 720p resolution).

Abstract: A computing system configured to execute instructions for a first graphical processing unit (GPU) on a second GPU is provided. The computing system may include the second GPU and a processor. The processor may be configured to receive second GPU state data that indicates one or more global properties of the second GPU. The processor may be further configured to receive one or more binary instructions for texture operation configured to be executed on the first GPU. Based on the second GPU state data, the processor may be further configured to apply a texture value patch to the one or more binary instructions. Applying the texture value patch may translate the one or more binary instructions into one or more translated binary instructions configured to be executed on the second GPU.