Abstract: A thermal detector includes a readout substrate, including a readout circuit; and an absorbent membrane suspended above the readout substrate and thermally isolated therefrom, and including a thermometer transducer electrically connected to the readout circuit. The thermometer transducer is formed by a plurality of thermometer diodes connected in parallel and the readout circuit is adapted to activate the thermometer diodes selectively. The thermometer diodes and the readout circuit are configured so as to have at least the following two electrical configurations: a first configuration where a total electrical current Id circulating in the thermometer transducer has a first value Id,1; and a second configuration where the total electrical current Id has a second value Id,2 different from Id,1.

Abstract: A visible and infrared image sensor, including: a first active layer for detecting visible radiation, in which a plurality of visible detection pixels are defined; and superimposed on the first active layer, a second active layer for detecting infrared radiation, in which a plurality of infrared detection pixels are defined, wherein the second active layer defines a vertical resonant cavity for said infrared radiation, the sensor further including, on the side of the face of the second active layer opposite the first active layer, a control integrated circuit superimposed on the first and second active layers.

Abstract: An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.

Abstract: The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: A current-assisted photonic demodulator, including a detection portion produced based on germanium, containing at least two doped modulation regions and at least one doped collection region, surrounded by a peripheral lateral portion generating in the detection portion horizontal tensile and vertical compressive mechanical stress. The doped collection region(s) are disposed according to a vertical arrangement in relation to the doped modulation regions.

Abstract: A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.

Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

Abstract: A detection system includes a readout substrate, at least one thermal detector associated with a reflector, and at least one compensation device including a compensation transducer in thermal contact with the readout substrate, arranged between the reflector and the readout substrate, and situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation.

Abstract: A planar photodiode including a main layer including an n-doped first region, a p-doped second region, and an intermediate region, and also a p-doped peripheral lateral portion. It also includes a peripheral intermediate portion, made of an alternation of monocrystalline thin layers of silicon-germanium and germanium, located on the first face, and extending between and at a non-zero distance from the doped first region and from the peripheral lateral portion so as to surround the doped first region in a main plane.

Abstract: A microbolometer may include a sensitive material based on vanadium oxide (VOx) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 ?·cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Abstract: The invention relates to a process for fabricating at least tensilely strained planar photodiode 1, comprising producing a stack formed from a semiconductor layer 53, 55 made of a first material and from an antireflection layer 20; producing a peripheral trench 30 that opens onto a seed sublayer 22 made of a second material of the antireflection layer 20; epitaxy of a peripheral section 31 made of the second material in the peripheral trench 30; and returning to room temperature, a detecting section 10 then being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.

Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

Abstract: A heat-sensitive resistor with a negative or positive temperature coefficient comprises respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100° C.

Abstract: A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.

Abstract: An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.

Abstract: A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.