Abstract: A microbolometer may include a sensitive material based on vanadium oxide (VOx) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 ?·cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Abstract: The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).

Abstract: The invention relates to a process for manufacturing a microbolometer (10) comprising a sensitive material (15) based on vanadium oxide (VOx) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps: i. determining a non-zero effective amount of the additional chemical element (B, C) starting from which the sensitive material (15), having undergone exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material (15); ii. producing the sensitive material (15) in a thin layer having an amount of the additional chemical element (B, C) greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; iii.

Abstract: A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; and exposing the sensitive material to a temperature Tr for a duration ?tr.

Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.

Abstract: A detection system includes a readout substrate, at least one thermal detector associated with a reflector, and at least one compensation device including a compensation transducer in thermal contact with the readout substrate, arranged between the reflector and the readout substrate, and situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation.

Abstract: A thermal detector including a substrate, an absorbent membrane including a fixed part and a deformable part, the latter including a shape-memory alloy, and being arranged with respect to the substrate in such a way that its free end is in contact with the substrate at the contact temperature Tc above the austenite start temperature As.

Abstract: A flexible film of crystalline or semi-crystalline material comprising a first region surrounded by a first amorphized wall.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.

Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.

Abstract: The invention relates to an optoelectronic device (1) comprising: at least one diode (2) that has a semiconductor portion (20) in which a PN or PIN junction is formed; a peripheral conductive layer (40) that extends in the main plane in such a way as to surround the semiconductor portion (20); a peripheral piezoelectric portion (30) that extends in the main plane in such a way as to surround the semiconductor portion (20); a first polarizing electric circuit (30) capable of generating an electric field in the peripheral piezoelectric portion (30) by applying an electric potential at least to the peripheral conductive layer (40) so as to induce a deformation of the peripheral piezoelectric portion (30) in the direction of the main plane, thus causing a tensile deformation of the semiconductor portion (20) in the main plane.

Abstract: The invention relates to a process for fabricating at least tensilely strained planar photodiode 1, comprising producing a stack formed from a semiconductor layer 53, 55 made of a first material and from an antireflection layer 20; producing a peripheral trench 30 that opens onto a seed sublayer 22 made of a second material of the antireflection layer 20; epitaxy of a peripheral section 31 made of the second material in the peripheral trench 30; and returning to room temperature, a detecting section 10 then being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.

Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Abstract: The invention relates to a process for manufacturing a microbolometer (10) comprising a sensitive material (15) based on vanadium oxide (VOx) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps: i. determining a non-zero effective amount of the additional chemical element (B, C) starting from which the sensitive material (15), having undergone exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material (15); ii. producing the sensitive material (15) in a thin layer having an amount of the additional chemical element (B, C) greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?.cm; iii.

Abstract: A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tr for a duration ?tr, has an electrical resistivity ?a|r at ambient temperature greater than or equal to 50% of the native value ?a of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 ?·cm; and exposing the sensitive material to a temperature Tr for a duration ?tr.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.

Abstract: A device including an electrically conducting track arranged on a support includes a step of supply of the support, and a step of formation of the electrically conducting track on the support including a step of supply of a solution intended to be deposited on the support, a step of deposition of the solution by printing on the support. The step of supply of the solution is such that the solution supplied includes a mixture of a solvent, of a set of metal particles and of a metallic material having a melting point below that of the metal particles of the set of metal particles, and the method includes a step of melting of the metallic material which results in the formation of a solder of metallic material between metal particles of the set of metal particles.

Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.