Abstract: Brazing alloy wire formed from a composite comprising a sheath of at least one ductile first phase and a core comprising particles of a different composition to the sheath, in which: the sheath has an annealing temperature in degrees K the particles have a melting point at least 20% above the annealing temperature of the sheath the particles have a size distribution in which 25% by weight or less comprise particles less than 25 ?m in size the particles are discrete.

Abstract: Brazing alloy wire formed from a composite comprising a sheath of at least one ductile first phase and a core comprising particles of a different composition to the sheath, in which: the sheath has an annealing temperature in degrees K the particles have a melting point at least 20% above the annealing temperature of the sheath the particles have a size distribution in which 25% by weight or less comprise particles less than 25 ?m in size the particles are discrete

Abstract: An alloy is provided having the composition TixZryCozR1?x?y?z wherein R represents any element other than Ti, Zr, or Co 0.182?x?0.718 0.154?y?0.681 0.08?z?0.3 and 0.95?x+y+z?1. the alloy may be used to braze titanium and titanium alloys.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a die cast copper indium gallium sputtering target material on the backing structure.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition.

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: A method of forming Heusler or Heusler-like alloys of formula X2YZ or XYZ comprises providing a crucible comprised of at least one metal oxide material thermodynamically stable to molten transition metals; supplying predetermined amounts of constituent elements or master alloy materials of the alloy to the crucible; and melting the constituent elements or master alloy materials under vacuum or a partial pressure of an inert gas to form alloys containing less than about 50 ppm oxygen. Crack-free alloys are formed by casting the alloys in a mold utilizing a multi-stage stress-relieving, heat-assisted casting process. Also disclosed are crack-free Heusler and Heusler-like alloys of formula X2YZ or XYZ containing less than about 50 ppm oxygen and deposition sources, e.g., sputtering targets, fabricated therefrom.

Abstract: A method of forming a cast metal alloy comprises providing a molten ferromagnetic metal alloy; utilizing AC or DC electrical power to generate a pulsed or oscillating magnetic field within the interior space of a casting mold via a magnetic core assembly surrounding the casting mold; filling the casting mold with the molten metal alloy; applying the pulsed or oscillating magnetic field to the molten metal alloy during solidification to mix a molten portion of the solidifying body; and continuing applying the pulsed or oscillating magnetic field to the solidifying body until complete solidification is achieved. The method has particular utility in the formation of cast ferromagnetic alloys for use as high PTF sputtering targets having improved microstructural features.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M1—M2—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided.

Abstract: Alloy compositions include Mn alloys that combine Mn with one element selected from Ga, In, Ni and Zn. Also included are Fe alloys and Co alloys in which Fe or Co are combined with either Pt or Pd. The alloy compositions form ordered compounds having L10 or L12 type crystalline structures within specified compositional ranges. In addition, the alloy compositions have low levels of impurities, such as oxygen and sulfur, which provide better performance in magnetic memory applications. The alloy compositions preferably are formed into sputtering targets used for thin film applications.