Patents by Inventor Abdelouahab Ziani

Abdelouahab Ziani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050277002
    Abstract: A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X1, where X1 is an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X2, wherein X2 is selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X3, wherein X3 is an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.
    Type: Application
    Filed: June 15, 2004
    Publication date: December 15, 2005
    Inventors: Abdelouahab Ziani, Yuanda Cheng, Bernd Kunkel, Michael Bartholomeusz
  • Publication number: 20050274221
    Abstract: A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).
    Type: Application
    Filed: July 19, 2005
    Publication date: December 15, 2005
    Applicant: Heraeus, Inc.
    Inventors: Abdelouahab Ziani, Yuanda Cheng, Bernd Kunkel, Michael Bartholomeusz
  • Patent number: 6299690
    Abstract: A method of lubricating the wall surfaces of a die cavity used in powder metallurgy involves spraying the wall surfaces with tribocharged particles of a lubricant material. The method is carried out by means of an apparatus centered about a plug member which has a three-dimensional shape conforming generally to that of the article to be formed. The plug member is slightly smaller than the article so that when the plug member is inserted into the die cavity there is a small, but uniform, gap created between the outer wall surfaces of the plug member and the walls of the die cavity. The plug member is secured to a closing plate which can be inserted into the die cavity so as to be sealed therewith. The closing plate is provided with vent holes and the plug member has a plurality of spaced apart tubes extending therethrough, which tubes exit at one or more of the wall surfaces of the plug member.
    Type: Grant
    Filed: November 18, 1999
    Date of Patent: October 9, 2001
    Assignee: National Research Council of Canada
    Inventors: Paul-Emile Mongeon, Sylvain Pelletier, Abdelouahab Ziani
  • Patent number: 5976456
    Abstract: This invention relates to a method for producing sintered parts of aluminum or aluminum alloy with improved mechanical properties using batch degassing, die compaction and liquid phase sintering. The batch degassing consists of holding a prealloyed aluminum powder at a temperature of about 350.degree. to about 450.degree. C. in a stainless steel autoclave in which the pressure is reduced to less than 5.times.10.sup.-6 torr. Once the desired pressure is reached the powder is cooled down within the autoclave while still under vacuum. The resulting powder is then compacted at a pressure of 20 to 50 tsi at between room temperature and about 250.degree. C., but preferably at a warm temperature of about 65.degree. C. The final densification is completed by liquid phase sintering in argon atmosphere at 625.degree. C. This method allows the production of sintered compacts characterized by a density close to 97% of theoretical, which makes it possible to eliminate the need for a hot working step.
    Type: Grant
    Filed: March 9, 1999
    Date of Patent: November 2, 1999
    Assignee: National Research Council of Canada
    Inventors: Abdelouahab Ziani, Sylvain Pelletier