Patents by Inventor Abhijit Basu Mallick
Abhijit Basu Mallick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978635Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.Type: GrantFiled: March 10, 2021Date of Patent: May 7, 2024Assignee: Applied Materials, Inc.Inventors: Swaminathan Srinivasan, Abhijit Basu Mallick, Nicolas Breil
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Patent number: 11972940Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.Type: GrantFiled: April 18, 2022Date of Patent: April 30, 2024Assignee: Applied Materials, Inc.Inventors: Xinke Wang, Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Jiecong Tang, John Sudijono, Mark Saly
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Patent number: 11967524Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.Type: GrantFiled: November 4, 2020Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Praket Prakash Jha, Shuchi Sunil Ojha, Jingmei Liang, Abhijit Basu Mallick, Shankar Venkataraman
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Publication number: 20240120193Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.Type: ApplicationFiled: October 5, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Shankar Venkataraman, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Lakmal C. Kalutarage, Jongbeom Seo, Sai Hooi Yeong, Benjamin Colombeau, Balasubramanian Pranatharthiharan
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Patent number: 11946134Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.Type: GrantFiled: January 27, 2022Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
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Publication number: 20240105499Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.Type: ApplicationFiled: September 28, 2022Publication date: March 28, 2024Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Xinke Wang, Xiang Ji, Praket Prakash Jha
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Publication number: 20240087882Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the one or more deposition precursors. The methods may include forming a silicon-containing material on the substrate. The methods may include providing a fluorine-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the silicon-containing material on the substrate with the fluorine-containing precursor to form a fluorine-treated silicon-containing material. The methods may include contacting the fluorine-treated silicon-containing material with plasma effluents of argon or diatomic nitrogen.Type: ApplicationFiled: September 9, 2022Publication date: March 14, 2024Applicant: Applied Materials, Inc.Inventors: Siyu Zhu, Hang Yu, Deenesh Padhi, Sung-Kwan Kang, Abdul Wahab Mohammed, Abhijit Basu Mallick
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Publication number: 20240055255Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.Type: ApplicationFiled: August 4, 2022Publication date: February 15, 2024Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Xinke Wang, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, John Sudijono
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Patent number: 11894230Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.Type: GrantFiled: January 25, 2023Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Vicknesh Sahmuganathan, Jiteng Gu, Eswaranand Venkatasubramanian, Kian Ping Loh, Abhijit Basu Mallick, John Sudijono, Zhongxin Chen
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Publication number: 20240027912Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.Type: ApplicationFiled: July 25, 2022Publication date: January 25, 2024Applicant: Applied Materials, Inc.Inventors: Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Mark Saly
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Publication number: 20230407468Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.Type: ApplicationFiled: September 5, 2023Publication date: December 21, 2023Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
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Patent number: 11848232Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.Type: GrantFiled: June 13, 2022Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Xin Liu, Fei Wang, Rui Cheng, Abhijit Basu Mallick, Robert Jan Visser
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Publication number: 20230402285Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD).Type: ApplicationFiled: June 14, 2022Publication date: December 14, 2023Applicant: Applied Materials, Inc.Inventors: Xinke Wang, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono, Mark Saly
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Patent number: 11842897Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about ?10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.Type: GrantFiled: October 4, 2019Date of Patent: December 12, 2023Assignee: Applied Materials, Inc.Inventors: Eswaranand Venkatasubramanian, Samuel E. Gottheim, Pramit Manna, Abhijit Basu Mallick
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Patent number: 11830729Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.Type: GrantFiled: January 8, 2021Date of Patent: November 28, 2023Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
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Patent number: 11830734Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.Type: GrantFiled: May 19, 2021Date of Patent: November 28, 2023Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Abhijit Basu Mallick
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Patent number: 11817320Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.Type: GrantFiled: August 29, 2019Date of Patent: November 14, 2023Assignee: Applied Materials, Inc.Inventors: Susmit Singha Roy, Kelvin Chan, Hien Minh Le, Sanjay Kamath, Abhijit Basu Mallick, Srinivas Gandikota, Karthik Janakiraman
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Publication number: 20230360906Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the oxygen-containing precursor at a temperature less than or about 700° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick
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Publication number: 20230360903Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick
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Publication number: 20230360924Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick, Shuchi Sunil Ojha, Praket Prakash Jha, Rui Cheng