Patents by Inventor Abhijit Basu Mallick

Abhijit Basu Mallick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930503
    Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: February 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ziqing Duan, Abhijit Basu Mallick
  • Publication number: 20210047728
    Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 18, 2021
    Inventors: Srinivas Gandikota, Susmit Singha Roy, Abhijit Basu Mallick
  • Publication number: 20210050365
    Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 18, 2021
    Inventors: Praburam Gopalraja, Susmit Singha Roy, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20210047733
    Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bo Qi, Huiyuan Wang, Yingli Rao, Abhijit Basu Mallick
  • Publication number: 20210043449
    Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.
    Type: Application
    Filed: April 8, 2019
    Publication date: February 11, 2021
    Inventors: Eswaranand VENKATASUBRAMANIAN, Yang YANG, Pramit MANNA, Kartik RAMASWAMY, Takehito KOSHIZAWA, Abhijit Basu MALLICK
  • Publication number: 20210043450
    Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.
    Type: Application
    Filed: October 13, 2020
    Publication date: February 11, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Eswaranand Venkatasubramanian, Samuel E. Gottheim, Pramit Manna, Abhijit Basu Mallick
  • Patent number: 10916505
    Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: February 9, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yong Wu, Srinivas Gandikota, Abhijit Basu Mallick, Srinivas D. Nemani
  • Patent number: 10910381
    Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: February 2, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Tejinder Singh, Takehito Koshizawa, Abhijit Basu Mallick, Pramit Manna, Nancy Fung, Eswaranand Venkatasubramanian, Ho-yung David Hwang, Samuel E. Gottheim
  • Publication number: 20210028055
    Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
    Type: Application
    Filed: October 13, 2020
    Publication date: January 28, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20210025058
    Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process.
    Type: Application
    Filed: April 1, 2019
    Publication date: January 28, 2021
    Inventors: Shishi JIANG, Pramit MANNA, Abhijit Basu MALLICK, Suresh Chand SETH, Srinivas D. NEMANI
  • Publication number: 20210013038
    Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 14, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Abhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
  • Patent number: 10886140
    Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: January 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng, Tomohiko Kitajima, Harry S. Whitesell, Huiyuan Wang
  • Patent number: 10886172
    Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: January 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
  • Publication number: 20200411371
    Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.
    Type: Application
    Filed: March 7, 2019
    Publication date: December 31, 2020
    Inventors: Xin LIU, Fei WANG, Rui CHENG, Abhijit Basu MALLICK, Robert Jan VISSER
  • Publication number: 20200388486
    Abstract: Methods for forming a semiconductor structure including a silicon (Si) containing layer or a silicon germanium (SiGe) layer are provided. The methods include depositing a protective barrier (e.g., liner) layer over the semiconductor structure, forming a flowable dielectric layer over the liner layer, and exposing the flowable dielectric layer to high pressure steam. A cluster system includes a first deposition chamber configured to form a semiconductor structure, a second deposition chamber configured to perform a liner deposition process to form a liner layer, a third deposition chamber configured to form a flowable dielectric layer over the liner layer, an annealing chamber configured to expose the flowable oxide layer to high pressure steam.
    Type: Application
    Filed: September 11, 2018
    Publication date: December 10, 2020
    Inventors: Pramit MANNA, Abhijit Basu MALLICK, Kurtis LESCHKIES, Steven VERHAVERBEKE, Shishi JIANG
  • Publication number: 20200385865
    Abstract: PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 ?/min.
    Type: Application
    Filed: June 8, 2020
    Publication date: December 10, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shishi Jiang, Pramit Manna, Abhijit Basu Mallick
  • Patent number: 10851454
    Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yong Wu, Srinivas Gandikota, Abhijit Basu Mallick
  • Patent number: 10854511
    Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yihong Chen, Yong Wu, Chia Cheng Chin, Xinliang Lu, Srinivas Gandikota, Ziqing Duan, Abhijit Basu Mallick
  • Patent number: 10840186
    Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Ziqing Duan, Abhijit Basu Mallick, Praburam Gopalraja
  • Patent number: 10840088
    Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Eswaranand Venkatasubramanian, Samuel E. Gottheim, Pramit Manna, Abhijit Basu Mallick