Patents by Inventor Abhijit Basu Mallick
Abhijit Basu Mallick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220375750Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.Type: ApplicationFiled: May 19, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Abhijit Basu Mallick
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Patent number: 11495454Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about ?500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.Type: GrantFiled: August 7, 2020Date of Patent: November 8, 2022Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Patent number: 11488856Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).Type: GrantFiled: October 13, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
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Publication number: 20220336212Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.Type: ApplicationFiled: April 20, 2021Publication date: October 20, 2022Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick
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Patent number: 11469097Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.Type: GrantFiled: April 8, 2019Date of Patent: October 11, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Eswaranand Venkatasubramanian, Yang Yang, Pramit Manna, Kartik Ramaswamy, Takehito Koshizawa, Abhijit Basu Mallick
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Publication number: 20220319841Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.Type: ApplicationFiled: June 23, 2022Publication date: October 6, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Patent number: 11462630Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In some embodiments, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film include halogen atoms. The film may be subsequently annealed to diffuse the dopants into the 3D structures.Type: GrantFiled: August 28, 2018Date of Patent: October 4, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Rui Cheng, Yi Yang, Karthik Janakiraman, Abhijit Basu Mallick
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Patent number: 11462438Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.Type: GrantFiled: September 14, 2018Date of Patent: October 4, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Susmit Singha Roy, Srinivas Gandikota, Abhijit Basu Mallick, Amrita B. Mullick
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Publication number: 20220310448Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.Type: ApplicationFiled: June 13, 2022Publication date: September 29, 2022Inventors: Xin LIU, Fei WANG, Rui CHENG, Abhijit Basu MALLICK, Robert Jan VISSER
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Patent number: 11430655Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.Type: GrantFiled: October 13, 2020Date of Patent: August 30, 2022Assignee: Applied Materials, Inc.Inventors: Eswaranand Venkatasubramanian, Samuel E. Gottheim, Pramit Manna, Abhijit Basu Mallick
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Patent number: 11414751Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.Type: GrantFiled: August 28, 2018Date of Patent: August 16, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Srinivas Gandikota, Susmit Singha Roy, Abhijit Basu Mallick
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Publication number: 20220246432Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.Type: ApplicationFiled: April 20, 2022Publication date: August 4, 2022Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Abhijit Basu Mallick, Swaminathan Srinivasan, Rui Cheng, Susmit Singha Roy, Gaurav Thareja, Mukund Srinivasan, Sanjay Natarajan
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Patent number: 11404263Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.Type: GrantFiled: August 7, 2020Date of Patent: August 2, 2022Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Publication number: 20220238531Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.Type: ApplicationFiled: April 14, 2022Publication date: July 28, 2022Applicant: Applied Materials, Inc.Inventors: Tejinder Singh, Takehito Koshizawa, Abhijit Basu Mallick, Pramit Manna, Nancy Fung, Eswaranand Venkatasubramanian, Ho-Yung David Hwang, Samuel E. Gottheim
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Publication number: 20220223409Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.Type: ApplicationFiled: January 8, 2021Publication date: July 14, 2022Applicant: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20220216058Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.Type: ApplicationFiled: January 6, 2021Publication date: July 7, 2022Applicant: Applied Materials, Inc.Inventors: Jialiang Wang, Susmit Singha Roy, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20220186365Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.Type: ApplicationFiled: December 11, 2020Publication date: June 16, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
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Publication number: 20220189824Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.Type: ApplicationFiled: December 11, 2020Publication date: June 16, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
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Patent number: 11361991Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.Type: GrantFiled: March 7, 2019Date of Patent: June 14, 2022Assignee: Applied Materials, Inc.Inventors: Xin Liu, Fei Wang, Rui Cheng, Abhijit Basu Mallick, Robert Jan Visser
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Patent number: 11355354Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the silicon-containing precursor, the oxygen-containing precursor, and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a silicon-and-oxygen-and-carbon-containing layer on the substrate.Type: GrantFiled: January 25, 2021Date of Patent: June 7, 2022Assignee: Applied Materials, Inc.Inventors: Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle