Abstract: A memory circuit includes a wordline, memory cells connected to the wordline and a wordline driver circuit. The memory circuit further includes a read assist circuit including an n-channel pull-down transistor having a source-drain path connected between the wordline and a ground node. A bias circuit applies a biasing voltage to the gate terminal of the n-channel pull-down transistor that is modulated responsive to process, voltage and temperature conditions in order to provide controlled word line underdrive.

Abstract: A memory array has word lines and bit lines. A row decoder is operable to decode a row address and select a corresponding word line. A read-write clock generator is operable to generate a hold clock signal. An address clock generator receives a read address, a write address, a dual port mode control signal, a read chip select signal, and a write chip select signal. When operating in dual port mode, and when operating in a read mode, the address clock generator applies a read delay to the read address and outputs the read address, as delayed, to the row pre-decoder as the address in response to the hold clock signal.

Abstract: A memory circuit includes a wordline, memory cells connected to the wordline and a wordline driver circuit. The memory circuit further includes a read assist circuit including an n-channel pull-down transistor having a source-drain path connected between the wordline and a ground node. A bias circuit applies a biasing voltage to the gate terminal of the n-channel pull-down transistor that is modulated responsive to process, voltage and temperature conditions in order to provide controlled word line underdrive.

Abstract: Disclosed herein is an electronic device including a bit line and a complementary bit line, first and second cross coupled inverters, a first pass gate coupled between the complementary bit line and the first inverter, and a second pass gate coupled between the bit line and the second inverter. The electronic device also includes third and fourth cross coupled inverters, a third pass gate coupled between the complementary bit line and the third inverter, and a fourth pass gate coupled between the bit line and the fourth inverter. The first, second, and fourth inverters are powered between a supply node and a reference node, and the third inverter is powered between a floating node and the reference node. The first pass gate and third pass gate are coupled in parallel.