Abstract: One embodiment of the invention is based on the recognition that by keeping the encryption key (DEK) in a key device, and using the key device to perform all encryption and decryption, where the DEK is not supplied to the computing system, the above noted security problems can be overcome. The encrypted information is stored in the computing system and not in the key device. However, without the key device, it is not possible to access the encrypted information stored in the computing system. Thus, the function of the key device is similar to that of a physical key used in daily life for unlocking a door or drawer, except that the user gains access to protected information instead of access to a building, drawer or car.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: Various embodiments for determining parameters for wafer inspection and/or metrology are provided.

Abstract: Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.

Abstract: Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe are provided. One method includes separating defects into bins based on regions in which the defects are located, defect types, and values of the defects for parameter(s) of a detection algorithm. The method also includes determining a number of the defects to be selected from each bin by distributing a user-specified target number of defects across the bins. In addition, the method includes selecting defects from the bins based on the determined numbers thereby creating a defect sample for use in selecting values of parameter(s) of the detection algorithm for use in the inspection recipe.

Abstract: Various embodiments for determining dynamic care areas are provided.

Abstract: The present invention relates to reactive purge compound for cleaning polymer processing equipment wherein the reactive purge compound that includes i) at least about 50 wt.% of a polymeric carrier component based on the total weight of the reactive purge compound; and ii) a chain scission catalyst component dispersed in the polymeric carrier component; wherein a) the chain scission catalyst component includes a chain scission catalyst selected from the group consisting of at least one alkali metal hydroxide, at least one alkaline earth metal hydroxide, and any combination thereof; b) the reactive purge compound further comprises a water generating component; or c) both (a) and (b); wherein the reactive purge compound is a feedstock material in the form of a plurality of pellets, granules, rods, powder or other particles.

Abstract: Methods and systems for generating information to be used for selecting values for parameter(s) of a detection algorithm are provided. One method includes without user intervention performing a scan of an area of a wafer using an inspection system and default values for parameter(s) of a detection algorithm to detect defects on the wafer. The method also includes selecting a portion of the defects from results of the scan based on a predetermined maximum number of total defects to be used for selecting values for the parameter(s) of the detection algorithm. The method further includes storing information, which includes values for the parameter(s) of the detection algorithm determined for the defects in the portion. The information can be used to select the values for the parameter(s) of the detection algorithm to be used for the inspection recipe without performing an additional scan of the wafer subsequent to the scan.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods are provided. One method for identifying array areas in dies formed on a wafer includes comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer. The method also includes determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparing step. In addition, the method includes identifying the array areas in the dies formed on the wafer based on results of the determining step.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: The present invention relates to reactive purge compound for cleaning polymer processing equipment wherein the reactive purge compound that includes i) at least about 50 wt.% of a polymeric carrier component based on the total weight of the reactive purge compound; and ii) a chain scission catalyst component dispersed in the polymeric carrier component; wherein a) the chain scission catalyst component includes a chain scission catalyst selected from the group consisting of at least one alkali metal hydroxide, at least one alkaline earth metal hydroxide, and any combination thereof; b) the reactive purge compound further comprises a water generating component; or c) both (a) and (b); wherein the reactive purge compound is a feedstock material in the form of a plurality of pellets, granules, rods, powder or other particles.

Abstract: Methods and systems for generating information to be used for selecting values for parameter(s) of a detection algorithm are provided. One method includes without user intervention performing a scan of an area of a wafer using an inspection system and default values for parameter(s) of a detection algorithm to detect defects on the wafer. The method also includes selecting a portion of the defects from results of the scan based on a predetermined maximum number of total defects to be used for selecting values for the parameter(s) of the detection algorithm. The method further includes storing information, which includes values for the parameter(s) of the detection algorithm determined for the defects in the portion. The information can be used to select the values for the parameter(s) of the detection algorithm to be used for the inspection recipe without performing an additional scan of the wafer subsequent to the scan.

Abstract: Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.

Abstract: Various methods, carrier media, and systems for monitoring a characteristic of a specimen are provided. One computer-implemented method for monitoring a characteristic of a specimen includes determining a property of individual pixels on the specimen using output generated by inspecting the specimen with an inspection system. The method also includes determining a characteristic of individual regions on the specimen using the properties of the individual pixels in the individual regions. The method further includes monitoring the characteristic of the specimen based on the characteristics of the individual regions.

Abstract: Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods are provided. One method for identifying array areas in dies formed on a wafer includes comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer. The method also includes determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparing step. In addition, the method includes identifying the array areas in the dies formed on the wafer based on results of the determining step.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: A system is described for obtaining intraoral radiographic images using an anatomically conforming sensor and a method is described for correcting the projective distortions caused by the inclination of the plane of the imaging sensor relative to the x-ray beam. The purpose of the described sensor system is to reduce patient discomfort as compared to conventional planar intra-oral x-ray sensors, which tend to impinge on sensitive tissues within the oral cavity. An additional purpose of the described system is to allow for better coverage of the subject by allowing the sensor to fit closer against the surrounding tissues.

Abstract: A system is described for obtaining intraoral radiographic images using an anatomically conforming sensor and a method is described for correcting the projective distortions caused by the inclination of the plane of the imaging sensor relative to the x-ray beam. The purpose of the described sensor system is to reduce patient discomfort as compared to conventional planar intra-oral x-ray sensors, which tend to impinge on sensitive tissues within the oral cavity. An additional purpose of the described system is to allow for better coverage of the subject by allowing the sensor to fit closer against the surrounding tissues.