Abstract: The present invention relates, in general, to the purification of boron trichloride (BCl3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl4) formation in BCl3 production and/or the removal of SiCl4 in BCl3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl4 present to SiH4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl4 from BCl3 that has been partially purified to remove light boilers.

Abstract: The present invention relates, in general, to the purification of boron trichloride (BCl3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl4) formation in BCl3 production and/or the removal of SiCl4 in BCl3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl4 present to SiH4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl4 from BCl3 that has been partially purified to remove light boilers.

Abstract: The present invention relates, in general, to the purification of boron trichloride (BCl3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl4) formation in BCl3 production and/or the removal of SiCl4 in BCl3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl4 present to SiH4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl4 from BCl3 that has been partially purified to remove light boilers.

Abstract: The present invention relates, in general, to the purification of boron trichloride (BCl3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl4) formation in BCl3 production and/or the removal of SiCl4 in BCl3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl4 present to SiH4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl4 from BCl3 that has been partially purified to remove light boilers.

Abstract: Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.

Abstract: Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal3. The Gal3 is removed using the exhaust system of the chamber by raising the temperature of the desorbing surface. Other volatile gallium-containing by-products may also be formed and removed from the exhaust system.

Abstract: Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.

Abstract: Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C4F6, C5F8 and C2F3I, among others. The substrate processing system may be configured to allow creation of a plasma useful for accelerating ions created in the plasma toward the substrate. The substrate may have regions of exposed silicon oxide and an overlying patterned photoresist layer which exposes narrow regions of silicon oxide. The etch process may remove the silicon oxide to a significant depth while maintaining a relatively constant width down the trench.

Abstract: A system (10) for laminating a plurality of veneer layers (14, 18) is disclosed. The system (10) comprises a base veneer layer roll (12) carrying a base veneer layer (14) and at least one additional roll (16) carrying at least one additional veneer layer (18) that is to be laminated to the base veneer layer (14). Guiding means (24, 28) is provided for guiding the two layers (14, 18) towards each other, with a pair of adjacent laminating rollers (30, 32) being arranged to receive the base veneer layer (14) and the additional veneer layer (18) therebetween, so as to continuously laminate the two layers (14, 18) as they move through the laminating rollers (30, 32). Preferably, the additional veneer layer (18) is impregnated with heat-activatable glue, with the system (10) further including a bank of heating elements (40) arranged to activate the glue on the additional veneer layer (18).