Patents by Inventor Adam Wehner
Adam Wehner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11953765Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: GrantFiled: April 10, 2023Date of Patent: April 9, 2024Assignee: RAYTHEON COMPANYInventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Publication number: 20240055466Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Applicant: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Patent number: 11886095Abstract: A scalable independent unit cell device architecture may include a phase-shifting element and a phase shift driver both integrated within the unit cell device. The phase shift driver may be coupled to the phase-shifting element and the phase shift driver may independently control the phase-shifting element to produce an optical beam having a desired phase. The unit cell device may further include an optical antenna that outputs the beam having the desired phase. The unit cell device may be formed as an opto-electronic hybrid optimized to leverage direct bond hybridization (DBH) to attach an electronic integrated circuit wafer to a side of a photonic integrated circuit wafer. The resulting unit cell device (i.e., 24 microns) may tightly integrate individual element-level phase control, which may be implemented within large-scale two-dimensional photonic arrays with hemispherical beam steering.Type: GrantFiled: April 15, 2022Date of Patent: January 30, 2024Assignee: Raytheon CompanyInventors: Christopher Casimir Brough, Sean P. Kilcoyne, Richard Wahl, Thomas Yengst, Justin Gordon Adams Wehner
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Patent number: 11837623Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: GrantFiled: October 12, 2020Date of Patent: December 5, 2023Assignee: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Publication number: 20230333442Abstract: A scalable independent unit cell device architecture may include a phase-shifting element and a phase shift driver both integrated within the unit cell device. The phase shift driver may be coupled to the phase-shifting element and the phase shift driver may independently control the phase-shifting element to produce an optical beam having a desired phase. The unit cell device may further include an optical antenna that outputs the beam having the desired phase. The unit cell device may be formed as an opto-electronic hybrid optimized to leverage direct bond hybridization (DBH) to attach an electronic integrated circuit wafer to a side of a photonic integrated circuit wafer. The resulting unit cell device (i.e., 24 microns) may tightly integrate individual element-level phase control, which may be implemented within large-scale two-dimensional photonic arrays with hemispherical beam steering.Type: ApplicationFiled: April 15, 2022Publication date: October 19, 2023Inventors: Christopher Casimir Brough, Sean P. Kilcoyne, Richard Wahl, Thomas Yengst, Justin Gordon Adams Wehner
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Publication number: 20230244096Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Patent number: 11650438Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: GrantFiled: August 2, 2019Date of Patent: May 16, 2023Assignee: RAYTHEON COMPANYInventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Publication number: 20220268570Abstract: Apparatus and associated methods relate to passive ranging of objects by using relative positional relation of the object to a coded aperture ranged object. A first range to a first object is determined via a coded-aperture ranging system based on a point spread function optimization of an image of the first object. The terrain surface between the first object and a second object is mapped via a 3D polarimetry system. A second range to the second object is then calculated via a range calculator based on the first range and the terrain surface between the first object and the second object.Type: ApplicationFiled: February 19, 2021Publication date: August 25, 2022Inventors: Justin Gordon Adams Wehner, Jamal Ibrahim Mustafa
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Publication number: 20220115423Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: ApplicationFiled: October 12, 2020Publication date: April 14, 2022Applicant: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Patent number: 10971538Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: GrantFiled: September 19, 2018Date of Patent: April 6, 2021Assignee: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Publication number: 20210033893Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: ApplicationFiled: August 2, 2019Publication date: February 4, 2021Inventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Patent number: 10267997Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.Type: GrantFiled: November 11, 2015Date of Patent: April 23, 2019Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Duane D. Smith, Edward Peter Gordon Smith, Adam M. Kennedy
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Publication number: 20190019836Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Applicant: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Patent number: 10128297Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: GrantFiled: November 20, 2015Date of Patent: November 13, 2018Assignee: RAYTHEON COMPANYInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Patent number: 9929291Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.Type: GrantFiled: February 6, 2014Date of Patent: March 27, 2018Assignee: RAYTHEON COMPANYInventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
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Patent number: 9919664Abstract: A vehicle fuel mileage determining system includes a fuel consumption measuring device, a distance measuring device, a display configured to display fuel mileage data and a controller. The controller is coupled to the fuel consumption measuring device, the distance measuring device and the display. The controller is configured to calculate fuel mileage data using baseline data, data from the fuel consumption measuring device and data from the distance measuring device. The controller further shows the fuel mileage data calculated on the display. The controller is further configured to determine the baseline data as follows: in response to a reset condition being detected, the controller defines the baseline data as being equal to initial factory settings; and in response to the reset condition not being detected, the controller defines the baseline data as being equal to previously determined fuel and distance data.Type: GrantFiled: June 27, 2016Date of Patent: March 20, 2018Assignee: Nissan North America, Inc.Inventors: Petar Vucelic, Roger Bredernitz, Adam Wehner, Ronald S. Eisenhour
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Publication number: 20170369009Abstract: A vehicle fuel mileage determining system includes a fuel consumption measuring device, a distance measuring device, a display configured to display fuel mileage data and a controller. The controller is coupled to the fuel consumption measuring device, the distance measuring device and the display. The controller is configured to calculate fuel mileage data using baseline data, data from the fuel consumption measuring device and data from the distance measuring device. The controller further shows the fuel mileage data calculated on the display. The controller is further configured to determine the baseline data as follows: in response to a reset condition being detected, the controller defines the baseline data as being equal to initial factory settings; and in response to the reset condition not being detected, the controller defines the baseline data as being equal to previously determined fuel and distance data.Type: ApplicationFiled: June 27, 2016Publication date: December 28, 2017Inventors: Petar VUCELIC, Roger BREDERNITZ, Adam WEHNER, Ronald S. EISENHOUR
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Patent number: 9721449Abstract: A vehicle keyfob locator system includes a keyfob locator control panel, a display, a plurality of keyfob locator antennas and a controller. The keyfob locator control panel and the display are located within a passenger compartment of a vehicle. The plurality of keyfob locator antennas are installed at predetermined positions of a vehicle body structure of the vehicle. The controller is operably connected to the keyfob locator control panel and each of the keyfob locator antennas. The controller is configured to operate the keyfob locator antennas and determine a location of a keyfob within the vehicle body structure in response to activation of the keyfob locator control panel and further configured to display an approximate location of the keyfob on the display in response to determining the location of the keyfob within the vehicle body structure.Type: GrantFiled: September 29, 2015Date of Patent: August 1, 2017Assignee: Nissan North America, Inc.Inventors: Adam Wehner, Balkishan Malay Gupta
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Patent number: 9702988Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.Type: GrantFiled: January 6, 2016Date of Patent: July 11, 2017Assignee: Raytheon CompanyInventors: David R Rhiger, Justin Gordon Adams Wehner, Kelly Jones, Siddhartha Ghosh
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Publication number: 20170192113Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.Type: ApplicationFiled: January 6, 2016Publication date: July 6, 2017Applicant: Raytheon CompanyInventors: David R. Rhiger, Justin Gordon Adams Wehner, Kelly Jones, Siddhartha Ghosh