Abstract: A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

Abstract: Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 ?m. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 ?m.

Abstract: One particular implementation of the present invention may take the form of a method and system for adding an intermediate color to a computer-rendered object or scene to provide a more dynamic quality to the graphic. The method may add an additional, or tertiary, color to a computer graphic object or scene such that the tertiary color may be blended with a light source color based on calculated surface normals of the pixels of the object in relation to the location of the light source. The blending of the intermediary color with the color of the inserted light source may provide the graphic with a more painterly look giving the graphic or scene a more dynamic feel to a viewer. Another implementation may allow the amount of intermediate color blended into each pixel to be adjusted manually by a graphic designer to achieve a desired look to the object or scene.

Abstract: The present invention provides an antibody comprising an antigen binding domain which binds to human IL-12 and human IL-23. The antibody binds human IL-12p40 existing as a monomer (human IL-12p40) and as a homodimer (human IL-12p80) and the antibody inhibits the binding of human IL-12 to human IL-12R ?2 and human IL-23 to human IL-23R but does not inhibit the binding of human IL-12 or human IL-23 or human IL-12p40 or human IL-12p80 to human IL-12R?1.

Abstract: A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed.

Abstract: Methods, systems, and devices are described for updating resource access permissions in a virtual computing environment. In these methods, systems, and devices, a host computer system determines that a user associated with an existing session has moved from a first location to a second location, identifies at least one pre-access rule based on the second location, applies the at least one pre-access rule to the existing session before authenticating the user for access to the existing session in response to the determination that the user has moved to the second location, and authenticates the user at the second location for access to the existing session after the at least one pre-access rule has been applied to the existing session.

Abstract: A semiconductor device may include a doped semiconductor region wherein a dopant concentration of the semiconductor region is modulated over a plurality of intervals. Each interval may include at least one portion having a relatively low dopant concentration and at least one portion having a relatively high dopant concentration. A plurality of delta doped layers may be included in the plurality of intervals. Related methods are also discussed.

Abstract: Methods, systems, and devices are described for dynamically multiplexing user sessions among multiple terminal devices. A switch device establishes a session with a host device on behalf of a user logged in to a first terminal device communicatively coupled with the switch device. The switch device forwards packets received from the host device to the first terminal device, the packets associated with the session. The switch device may receive a selection of a second terminal for association with the session while maintaining the session with the host device on behalf of the user. The switch device forwards at least a portion of the packets associated with the session from the host device to the second terminal device responsive to receiving the selection of the second terminal device.

Abstract: A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

Abstract: A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.

Abstract: Methods, systems, and devices are described for dynamically multiplexing user sessions among multiple terminal devices. A switch device establishes a session with a host device on behalf of a user logged in to a first terminal device communicatively coupled with the switch device. The switch device forwards packets received from the host device to the first terminal device, the packets associated with the session. The switch device may receive a selection of a second terminal for association with the session while maintaining the session with the host device on behalf of the user. The switch device forwards at least a portion of the packets associated with the session from the host device to the second terminal device responsive to receiving the selection of the second terminal device.

Abstract: Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on the second Group III nitride layer in-situ in the reactor. The substrate including the first Group III nitride layer, the second group III nitride layer and the silicon nitride layer is removed from the reactor, and the silicon nitride layer is patterned to form a first contact hole that exposes a first contact region of the second Group III nitride layer. A metal contact is formed on the first contact region of the second Group III nitride layer.

Abstract: An actuator (1) for a hand-held aerosol container fitted centrally at its top with a dispensing valve, said actuator comprising: (i) a cup-shaped over-cap (3) attachable to the container and comprising a top wall defining a gap through which a spray channel passes, said gap restricting lateral movement of the spray channel; (ii) a spray channel (4) in fluid connection with the valve; (iii) an actuator button (5) comprising a finger pad from which a keel depends; the keel dependent from the finger pad of the button (5) being able to press down onto the spray channel (4) and the spray channel (4) on to the valve after the first slide movement of the button (5), but not before; whereby the actuator button (5) has a distinct first slide movement that puts it into an orientation in which a second depression movement causes release of the contents of the associated dispenser and in that the force required for the first slide movement of the actuator button (5) is at least 5N.

Abstract: Embodiments of an oil pump for an engine have an increased pump capacity while maintaining or marginally increasing the overall physical size of the pump. In some embodiments, this increased capacity is reflected in a pump length efficiency ratio, which compares an effective gear length (LG) of first and second pump gears used in the oil pump, to an effective housing length (LH). The effective housing length (LH) is a longitudinal distance between surfaces on opposite ends of the oil pump that must be maintained for the oil pump to fit into an available space. Accordingly, the pump length efficiency ratio indicates how much of the effective housing length (LH) can be occupied by the gears. Alternatively, the pump capacity is measured using an output flow efficiency ratio, which compares a theoretical pump flow (FP) at a given gear speed (SG) to the effective housing length (LH) of the pump.

Abstract: The present disclosure provides an isolated or recombinant IL-23-binding protein comprising an antigen binding domain of an antibody, wherein the antigen binding domain specifically binds to IL-23 but does not significantly bind to an IL-12p40 subunit and does not significantly bind to an IL-23p19 subunit when they are not components of IL-23. The present disclosure also provides uses of the IL-23-binding protein.

Abstract: A method of increasing oil pressure in a heavy duty truck engine lubricating system is provided. The lubricating system comprises an oil pressure regulating assembly mounted in an oil filter base and having a main spring to regulate oil pressure, and a high pressure relief valve assembly mounted in the oil filter base and having a peak clipping spring to relieve oil pressure when the pressure exceeds a specified limit. The method includes the steps of replacing the main spring with a replacement main spring having a higher spring constant and replacing the peak clipping spring with a replacement peak clipping spring having a higher spring constant. A replacement kit for increasing oil pressure is also provided.

Abstract: A method for manufacturing an engine block includes removing material from the top deck of the engine block surrounding a first opening to create a first recessed area, positioning a first insert within the first recessed area, removing material from the top deck of the engine block surrounding a second opening to create a second recessed area that at least partially overlaps the first recessed area, and positioning a second insert within the second recessed area.

Abstract: A method for providing fog or fading due to atmospheric effects during computer animation of an image. The method includes determining a lighting value for a scene's or an image's pixels based on the positions of the pixels relative to a light source. The method includes, for each of the pixels, setting a fade in start distance for each pixel measured from a camera location so as to define when fog is added, e.g., when to fade a pixel's color by blending this color with a fog color. The fade in start distances are set based on each pixel's lighting value, whereby pixels with smaller lighting values or shadowed pixels begin to fade first while highlighted pixels fade with greater distances. The method includes adding fog to the image starting at the fade in start distances for each of the pixels and then rendering the image.

Abstract: A tool for use in adjusting the relative position of one gear to another is provided. The tool may be used to set and adjust the backlash between a camshaft gear and an adjustable idler gear in an internal combustion engine.

Abstract: A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 ?m.