Abstract: Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 ?m. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 ?m.

Abstract: Polyester polyols made from thermoplastic polyesters are disclosed. The polyols can be made by heating a thermoplastic polyester such as virgin PET, recycled PET, or mixtures thereof, with a glycol to give a digested intermediate, which is then condensed with a dimer fatty acid to give the polyol. The invention includes a polyester polyol comprising recurring units of a glycol-digested thermoplastic polyester and a dimer fatty acid. The polyester polyol can also be made in a single step by reacting the thermoplastic polyester, glycol, and dimer acid under conditions effective to produce the polyol. High-recycle-content polyols having desirable properties and attributes for formulating polyurethane products, including aqueous polyurethane dispersions, can be made. The polyols provide a sustainable alternative to bio- or petrochemical-based polyols.

Abstract: Various embodiments are described that relate to a loop with a constant phase. The loop can function as an antenna and be used in object detection. A current source can be used to power the loop such that the loop produces a magnetic field and electric field. The magnetic field can be powerful enough to detect a dielectric while the electric field is so small that it does not interfere with nearby communication equipment. Thus, detection can occur without disruption of other important devices.

Abstract: High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.

Abstract: A panel attachment system comprises a panel, a hanger, a plurality of anchors and a casing. Each anchor comprises an elongate post portion superimposed by a planar cap portion with each anchor having a second ‘T’-shaped cross sectional area. The hanger is removably secured to the casing by a plurality of fastening elements with each fastening element passing through a corresponding hole in the casing and being accommodated in a respective one of the plurality of bosses. The plurality of anchors is spaced along a first surface of the panel with each post portion being secured to and protruding from the first surface of the panel, the spacing between adjacent anchors corresponding to the spacing between adjacent slots in the second edge of the hanger plate, with each slot receivably accommodating a respective one of the anchors to secure the panel to the casing.

Abstract: A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

Abstract: The present disclosure provides an isolated or recombinant IL-23-binding protein comprising an antigen binding domain of an antibody, wherein the antigen binding domain specifically binds to IL-23 but does not significantly bind to an IL-12p40 subunit and does not significantly bind to an IL-23p19 subunit when they are not components of IL-23. The present disclosure also provides uses of the IL-23-binding protein.

Abstract: Techniques are described for sharing service management on a computing system. The computing system includes a display device and one or more processors. The processors are configured to determine, based on a context associated with an object, a plurality of weighted probabilities including a respective weighted probability for each sharing service from a plurality of sharing services, wherein the context includes at least one of a characteristic of the object and a respective characteristic of at least a portion of sharing services from the plurality of sharing services, select, based on the respective weighted probabilities, a subset of sharing services, output, for display at the display device, an indication of each sharing service from the subset of sharing services, receive an indication of a user input corresponding to a selection of one of the subset of sharing services, and transmit, using the selected sharing service, an indication of the object.

Abstract: Embodiments of medical carts and associated apparatuses and methods are disclosed herein. A medical cart configured in accordance with one embodiment includes a cart base assembly, a work platform, and a height adjustment assembly carrying the work platform above the cart base assembly. The cart base assembly includes an upper portion and a touch-sensitive foot panel generally below the upper portion. The touch-sensitive foot panel includes a resilient cover having a contact surface and a contact switch underlying the resilient cover. The contact switch is operably coupled to the height adjustment assembly, and the contact switch is configured to detect for operator foot contact at the contact surface and to raise or lower the work platform via the height adjustment assembly when the operator foot contact is detected.

Abstract: A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 ?m.

Abstract: Methods of forming semiconductor devices are provided by forming a semiconductor layer on a semiconductor substrate. A mask is formed on the semiconductor layer. Ions having a first conductivity type are implanted into the semiconductor layer according to the mask to form implanted regions on the semiconductor layer. Metal layers are formed on the implanted regions according to the mask. The implanted regions and the metal layers are annealed in a single step to respectively activate the implanted ions in the implanted regions and provide ohmic contacts on the implanted regions. Related devices are also provided.

Abstract: In one example, a method includes receiving an indication of an input gesture detected at a presence-sensitive input device, where the input gesture includes one or more input points and each input point is detected at a respective location of the presence-sensitive input device. The method may also include determining a focal point of the input gesture, and determining a radius length. The method may also include determining a shape centered at the focal point and having a size determined based on the radius length. The method may also include responding to a change in a geometric property of the shape by scaling information included in a graphical user interface, where the scaling of the information being centered at the focal point.

Abstract: A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.

Abstract: An upright surface treating appliance includes a main body, a surface treating head connected to a yoke, and a stand. To provide a compact appliance the yoke and the stand are pivotable independently relative to the main body about a common pivot axis. This can also enable the yoke and the stand to be rotatably connected to the main body using one or more common connectors or bearings.

Abstract: Methods, systems, and devices are described for using a central server computer system disposed to dynamically manage collaboration between terminal devices and peripheral devices during a virtual session. The central server computer system may associate a peripheral device with a virtual session hosted by a host device. The virtual session may be further associated with a terminal device communicatively coupled with the central server computer system. The central server computer system may establish a connection between the central server computer system and the peripheral device; forward peripheral data between the peripheral device and the host device such that the virtual session perceives the peripheral device as locally connected to the host device; and forward user interface data associated with the virtual session between the host device and the terminal device.

Abstract: An actuator (1) for a hand-held aerosol container fitted centrally at its top with a dispensing valve, the actuator having: (i) a cup-shaped over-cap (3) attachable to the container and having a top wall defining a gap through which a spray channel passes, the gap restricting lateral movement of the spray channel; (ii) a spray channel (4) in fluid connection with the valve; (iii) an actuator button (5) having a finger pad from which a keel depends; the keel dependent from the finger pad of the button (5) being able to press down onto the spray channel (4) and the spray channel (4) on to the valve after the first slide movement of the button (5), but not before; whereby the actuator button (5) has a distinct first slide movement that puts it into an orientation in which a second depression movement causes release of the contents of the associated dispenser and in that the force required for the first slide movement of the actuator button (5) is at least 5N.

Abstract: A computing device can receive an indication of a change in the proximity state of a first structure of an attachment mechanism and a second structure of the attachment mechanism. Responsive to receiving the indication, the computing device can be operable to change, based at least in part on the indication, a current access mode provided by the computing device. In some examples, both the computing device and the attachment mechanism may be part of a wearable computing device. In other examples, the computing device may be or be part of a physically separate device from the attachment mechanism.

Abstract: A computing device can receive an indication of a change in the proximity state of a first structure of an attachment mechanism and a second structure of the attachment mechanism. Responsive to receiving the indication, the computing device can be operable to change, based at least in part on the indication, a current access mode provided by the computing device. In some examples, both the computing device and the attachment mechanism may be part of a wearable computing device. In other examples, the computing device may be or be part of a physically separate device from the attachment mechanism.

Abstract: High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.

Abstract: A method of increasing oil pressure in a heavy duty truck engine lubricating system is provided. The lubricating system comprises an oil pressure regulating assembly mounted in an oil filter base and having a main spring to regulate oil pressure, and a high pressure relief valve assembly mounted in the oil filter base and having a peak clipping spring to relieve oil pressure when the pressure exceeds a specified limit. The method includes the steps of replacing the main spring with a replacement main spring having a higher spring constant and replacing the peak clipping spring with a replacement peak clipping spring having a higher spring constant. A replacement kit for increasing oil pressure is also provided.