Patents by Inventor Adib Khan
Adib Khan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11756803Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: GrantFiled: November 29, 2022Date of Patent: September 12, 2023Assignee: Applied Materials, Inc.Inventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
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Patent number: 11725274Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: GrantFiled: June 6, 2019Date of Patent: August 15, 2023Assignee: Applied Materials, Inc.Inventors: Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet, Qiwei Liang, Adib Khan
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Publication number: 20230093374Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: ApplicationFiled: November 29, 2022Publication date: March 23, 2023Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
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Patent number: 11527421Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: GrantFiled: July 20, 2020Date of Patent: December 13, 2022Assignee: Micromaterials, LLCInventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
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Publication number: 20220341042Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Adib KHAN, Shankar VENKATARAMAN, Jay D. PINSON, II, Jang-Gyoo YANG, Nitin K. INGLE, Qiwei LIANG
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Patent number: 11408075Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.Type: GrantFiled: October 18, 2018Date of Patent: August 9, 2022Assignee: Applied Materials, Inc.Inventors: Adib Khan, Shankar Venkataraman, Jay D. Pinson, II, Jang-Gyoo Yang, Nitin Krishnarao Ingle, Qiwei Liang
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Patent number: 11110383Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: GrantFiled: June 9, 2020Date of Patent: September 7, 2021Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Sultan Malik, Srinivas Nemani, Rafika Smati, Joseph Ng, John O'Hehir
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Patent number: 11066747Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.Type: GrantFiled: March 24, 2017Date of Patent: July 20, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Qiwei Liang, Adib Khan, Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet
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Patent number: 10947621Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.Type: GrantFiled: September 10, 2018Date of Patent: March 16, 2021Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Srinivas D. Nemani, Tobin Kaufman-Osborn
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Publication number: 20200368666Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: ApplicationFiled: June 9, 2020Publication date: November 26, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas NEMANI, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20200350183Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: ApplicationFiled: July 20, 2020Publication date: November 5, 2020Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
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Patent number: 10720341Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: GrantFiled: November 7, 2018Date of Patent: July 21, 2020Assignee: Micromaterials, LLCInventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
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Patent number: 10704141Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.Type: GrantFiled: April 12, 2019Date of Patent: July 7, 2020Assignee: Applied Materials, Inc.Inventors: Sultan Malik, Srinivas D. Nemani, Qiwei Liang, Adib Khan, Maximillian Clemons
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Patent number: 10675581Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: GrantFiled: August 6, 2018Date of Patent: June 9, 2020Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Sultan Malik, Srinivas Nemani, Rafika Smati, Joseph Ng, John O'Hehir
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Publication number: 20200038797Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.Type: ApplicationFiled: August 6, 2018Publication date: February 6, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas NEMANI, Rafika Smati, Joseph Ng, John O'Hehir
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Patent number: 10550472Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: GrantFiled: September 9, 2014Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Publication number: 20200035513Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.Type: ApplicationFiled: July 12, 2019Publication date: January 30, 2020Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Srinivas D. NEMANI
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Publication number: 20190368035Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.Type: ApplicationFiled: April 12, 2019Publication date: December 5, 2019Inventors: Sultan MALIK, Srinivas D. NEMANI, Qiwei LIANG, Adib KHAN, Maximillian CLEMONS
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Publication number: 20190301009Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: ApplicationFiled: June 6, 2019Publication date: October 3, 2019Inventors: Tobin KAUFMAN-OSBORN, Srinivas D. NEMANI, Ludovic GODET, Qiwei LIANG, Adib KHAN
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Patent number: 10358715Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: GrantFiled: June 3, 2016Date of Patent: July 23, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet, Qiwei Liang, Adib Khan