Patents by Inventor Adib Khan
Adib Khan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190148178Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.Type: ApplicationFiled: November 7, 2018Publication date: May 16, 2019Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
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Publication number: 20190119813Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.Type: ApplicationFiled: September 10, 2018Publication date: April 25, 2019Inventors: Adib KHAN, Qiwei LIANG, Srinivas D. NEMANI, Tobin KAUFMAN-OSBORN
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Publication number: 20190119769Abstract: A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.Type: ApplicationFiled: December 21, 2018Publication date: April 25, 2019Inventors: Adib KHAN, Qiwei LIANG, Sultan MALIK, Keith Tatseun WONG, Srinivas D. NEMANI
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Patent number: 10224224Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: GrantFiled: December 7, 2017Date of Patent: March 5, 2019Assignee: Micromaterials, LLCInventors: Qiwei Liang, Srinivas D. Nemani, Adib Khan, Venkata Ravishankar Kasibhotla, Sultan Malik, Sean S. Kang, Keith Tatseun Wong
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Publication number: 20190048470Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.Type: ApplicationFiled: October 18, 2018Publication date: February 14, 2019Inventors: Adib KHAN, Shankar VENKATARAMAN, Jay D. PINSON, II, Jang-Gyoo YANG, Nitin Krishnarao INGLE, Qiwei LIANG
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Patent number: 10113236Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.Type: GrantFiled: December 19, 2014Date of Patent: October 30, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Adib Khan, Shankar Venkataraman, Jay D. Pinson, II, Jang-Gyoo Yang, Nitin Krishnarao Ingle, Qiwei Liang
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Publication number: 20180261480Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: ApplicationFiled: March 9, 2018Publication date: September 13, 2018Inventors: Qiwei LIANG, Srinivas D. NEMANI, Adib KHAN, Venkata Ravishankar KASIBHOTLA, Sultan MALIK, Sean S. KANG, Keith Tatseun WONG
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Publication number: 20170350004Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: ApplicationFiled: June 3, 2016Publication date: December 7, 2017Inventors: Tobin KAUFMAN-OSBORN, Srinivas D. NEMANI, Ludovic GODET, Qiwei LIANG, Adib KHAN
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Publication number: 20170306491Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.Type: ApplicationFiled: March 24, 2017Publication date: October 26, 2017Inventors: Qiwei LIANG, Adib KHAN, Tobin KAUFMAN-OSBORN, Srinivas D. NEMANI, Ludovic GODET
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Patent number: 9285168Abstract: A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.Type: GrantFiled: September 28, 2011Date of Patent: March 15, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Dmitry Lubomirsky, Jay D. Pinson, II, Kirby H. Floyd, Adib Khan, Shankar Venkataraman
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Publication number: 20150329970Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.Type: ApplicationFiled: December 19, 2014Publication date: November 19, 2015Inventors: Adib KHAN, Shankar VENKATARAMAN, Jay D. PINSON, II, Jang-Gyoo YANG, Nitin Krishnarao INGLE, Qiwei LIANG
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Publication number: 20150013793Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: September 9, 2014Publication date: January 15, 2015Inventors: Kien N. CHUC, Qiwei LIANG, Hanh D. NGUYEN, Xinglong CHEN, Matthew MILLER, Soonam PARK, Toan Q. TRAN, Adib KHAN, Jang-Gyoo YANG, Dmitry LUBOMIRSKY, Shankar VENKATARAMAN
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Patent number: 8894767Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: GrantFiled: July 15, 2010Date of Patent: November 25, 2014Assignee: Applied Materials, Inc.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Patent number: 8524004Abstract: A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.Type: GrantFiled: June 15, 2011Date of Patent: September 3, 2013Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Jay D. Pinson, II, Kirby H. Floyd, Adib Khan, Shankar Venkataraman
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Publication number: 20120145079Abstract: A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.Type: ApplicationFiled: June 15, 2011Publication date: June 14, 2012Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Jay D. Pinson, II, Kirby H. Floyd, Adib Khan, Shankar Venkataraman
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Publication number: 20120079982Abstract: A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.Type: ApplicationFiled: September 28, 2011Publication date: April 5, 2012Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Jay D. Pinson, II, Kirby H. Floyd, Adib Khan, Shankar Venkataraman
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Publication number: 20110011338Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: July 15, 2010Publication date: January 20, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman