Abstract: A memory controller includes an encoder, a modulator, and a demodulator. A nonvolatile memory includes memory cells, each programmable to one of three or more levels. According to first encoded data, the modulator programs a first subset of the memory cells to a first of the levels and a second subset of the memory cells to a second of the levels. Measurable values of the first subset are characterized by a first probability density function having a first width. Measurable values of the second subset are characterized by a second probability density function having a second width. The first width is greater than the second width. The encoder generates the first encoded data based on input data such that the first subset is smaller than the second subset. The demodulator is configured to output second encoded data in response to measurable values of the memory cells.

Abstract: An apparatus includes a circuit configured to at least one of (i) encode first data to produce encoded data or (ii) decode second data to produce decoded data. The circuit is configured to operate according to a predetermined matrix. The predetermined matrix is represented by a two-dimensional grid of elements. Each element of the predetermined matrix labeled with a hyphen corresponds to a zero matrix. Each element of the predetermined matrix labeled with a number corresponds to a respective cyclic-permutation matrix.

Abstract: A memory controller includes an encoder, a modulator, and a demodulator. A nonvolatile memory includes memory cells, each programmable to one of three or more levels. According to first encoded data, the modulator programs a first subset of the memory cells to a first of the levels and a second subset of the memory cells to a second of the levels. Measurable values of the first subset are characterized by a first probability density function having a first width. Measurable values of the second subset are characterized by a second probability density function having a second width. The first width is greater than the second width. The encoder generates the first encoded data based on input data such that the first subset is smaller than the second subset. The demodulator is configured to output second encoded data in response to measurable values of the memory cells.

Abstract: Embodiments of the present invention provide multi-level signal memory with LDPC and interleaving. Thus, various embodiments of the present invention provide a memory apparatus that includes a memory block comprising a plurality of memory cells, each memory cell adapted to operate with multi-level signals. Such a memory apparatus also includes a low density parity check (LDPC) coder to LDPC code data values to be written into the memory cells and an interleaver adapted to apply bit interleaved code modulation (BICM) to the LDPC coded data values to generate BICM coded data values. Other embodiments may be described and claimed.

Abstract: A controller for a nonvolatile memory includes an encoder and a decoder. The memory includes memory cells that each store data using more than two levels. The encoder generates first data for storage in first memory cells. For first and second subsets of cells of the first memory cells, the first data is stored at first and second levels, respectively. Measurable values of the first subset of cells are characterized by a first probability density function having a first width. Measurable values of the second subset of cells are characterized by a second probability density function having a second width. The first width is greater than the second width. The encoder generates the first data such that a size of the first subset of cells is less than a size of the second subset of cells. The decoder decodes encoded data from the memory.

Abstract: A controller for a nonvolatile memory includes an encoder and a decoder. The memory includes memory cells that each store data using more than two levels. The encoder generates first data for storage in first memory cells. For first and second subsets of cells of the first memory cells, the first data is stored at first and second levels, respectively. Measurable values of the first subset of cells are characterized by a first probability density function having a first width. Measurable values of the second subset of cells are characterized by a second probability density function having a second width. The first width is greater than the second width. The encoder generates the first data such that a size of the first subset of cells is less than a size of the second subset of cells. The decoder decodes encoded data from the memory.

Abstract: An apparatus includes a circuit configured to at least one of (i) encode first data to produce encoded data or (ii) decode second data to produce decoded data. The circuit is configured to operate according to a predetermined matrix. Each element of the predetermined matrix labeled with a hyphen corresponds to a zero matrix. Each element of the predetermined matrix labeled with a number corresponds to a respective cyclic-permutation matrix.

Abstract: A memory arrangement including a memory block and a controller. The memory block comprises a plurality of memory cells, wherein each memory cell operable to store one of a plurality of different levels of charge. The controller is configured to write (i) a first reference signal threshold into a first memory cell and (ii) a second reference signal threshold into a second memory cell. The first reference signal threshold corresponds to a first level of charge of the plurality of different levels of charge, and the second reference signal threshold corresponds to a second level of charge of the plurality of different levels of charge. Each of the first level of charge and the second level of charge is used to calibrate a read back of any of the one of the plurality of different levels of charge stored among the plurality of memory cells in the memory block.

Abstract: A controller is described for a multi-level, solid state, non-volatile memory array having memory cells. The memory cells are configured to store data using a first number of digital levels. The controller is configured to encode multiple data bits to generate multiple encoded data bits, convert the multiple encoded data bits into multiple data symbols, and send the multiple data symbols for storage in a memory cell of the multi-level, solid state, non-volatile memory array. The controller is further configured to generate an output signal, using a second number of digital levels, based on data associated with the multiple data symbols stored in the memory cell. The second number of digital levels is greater than the first number of digital levels used to store the multiple data symbols in the memory cell. The controller is further configured to output multiple output data symbols based on the output signal.

Abstract: Embodiments of the present invention provide high density, multi-level memory. Thus, various embodiments of the present invention provide a memory apparatus in accordance with various embodiments of the present invention includes a memory block comprising a plurality of cells, each cell adapted to operate with multi-level signal. Such a memory apparatus also includes a channel block adapted to code data values in accordance with a coding scheme that favorably effects a distribution of the multi-levels of the multi-level signals, and to output the corresponding multi-level signals of the coded data values to the memory block. Other embodiments may be described and claimed.

Abstract: A controller is described for a multi-level, solid state, non-volatile memory array having memory cells. The memory cells are configured to store data using a first number of digital levels. The controller is configured to encode multiple data bits to generate multiple encoded data bits, convert the multiple encoded data bits into multiple data symbols, and send the multiple data symbols for storage in a memory cell of the multi-level, solid state, non-volatile memory array. The controller is further configured to generate an output signal, using a second number of digital levels, based on data associated with the multiple data symbols stored in the memory cell. The second number of digital levels is greater than the first number of digital levels used to store the multiple data symbols in the memory cell. The controller is further configured to output multiple output data symbols based on the output signal.

Abstract: A memory arrangement including a memory block and a controller. The memory block comprises a plurality of memory cells, wherein each memory cell operable to store one of a plurality of different levels of charge. The controller is configured to write (i) a first reference signal threshold into a first memory cell and (ii) a second reference signal threshold into a second memory cell. The first reference signal threshold corresponds to a first level of charge of the plurality of different levels of charge, and the second reference signal threshold corresponds to a second level of charge of the plurality of different levels of charge. Each of the first level of charge and the second level of charge is used to calibrate a read back of any of the one of the plurality of different levels of charge stored among the plurality of memory cells in the memory block.

Abstract: A communications device including a low-density parity check (LDPC) encoder and a transmitter. The LDPC encoder is configured to (i) receive data, and (ii) in response to the received data, generate encoded data using a predetermined LDPC matrix, in which the predetermined LDPC matrix is specified by a predetermined base matrix. The transmitter is configured to transmit the encoded data over a communications channel.

Abstract: A multi-level solid state non-volatile memory array has memory cells that store data using a first number of digital levels. A controller of the memory array encodes a series of data bits to generate a series of encoded data bits, and converts the series of encoded data bits into a series of data symbols. The controller sends, to the memory array, a stored series of data symbols based on the series of data symbols for storage in a memory cell of the multi-level solid state non-volatile memory array. The controller generates an output signal based on data associated with the stored series of data symbols. The output signal is characterized by a second number of digital levels greater than the first number of digital levels. The controller outputs a series of output data symbols based on the output signal.

Abstract: A memory arrangement including a memory block and a controller. The memory block comprises a plurality of memory cells, wherein each memory cell operable to store one of a plurality of different levels of charge. The controller is configured to write (i) a first reference signal threshold into a first memory cell and (ii) a second reference signal threshold into a second memory cell. The first reference signal threshold corresponds to a first level of charge of the plurality of different levels of charge, and the second reference signal threshold corresponds to a second level of charge of the plurality of different levels of charge. Each of the first level of charge and the second level of charge is used to calibrate a read back of any of the one of the plurality of different levels of charge stored among the plurality of memory cells in the memory block.

Abstract: A multiple-input multiple-output (MIMO) transmitter including a scrambler and a forward error correction encoder. The scrambler is configured to receive user data and generate scrambled data in response to the user data. The forward error correction encoder is configured to generate encoded data, in response to the scrambled data, using a low density parity check (LDPC) matrix, wherein the LDPC matrix is derived from a specified base matrix.

Abstract: Embodiments of the present invention provide high density, multi-level memory. Thus, various embodiments of the present invention provide a memory apparatus in accordance with various embodiments of the present invention includes a memory block comprising a plurality of cells, each cell adapted to operate with multi-level signal. Such a memory apparatus also includes a channel block adapted to code data values in accordance with a coding scheme that favorably effects a distribution of the multi-levels of the multi-level signals, and to output the corresponding multi-level signals of the coded data values to the memory block. Other embodiments may be described and claimed.

Abstract: Embodiments of the present invention provide multi-level signal memory with LDPC and interleaving. Thus, various embodiments of the present invention provide a memory apparatus that includes a memory block comprising a plurality of memory cells, each memory cell adapted to operate with multi-level signals. Such a memory apparatus also includes a low density parity check (LDPC) coder to LDPC code data values to be written into the memory cells and an interleaver adapted to apply bit interleaved code modulation (BICM) to the LDPC coded data values to generate BICM coded data values.

Abstract: Embodiments of the present invention provide multi-level signal memory with LDPC and interleaving. Thus, various embodiments of the present invention provide a memory apparatus that includes a memory block comprising a plurality of memory cells, each memory cell adapted to operate with multi-level signals. Such a memory apparatus also includes a low density parity check (LDPC) coder to LDPC code data values to be written into the memory cells and an interleaver adapted to apply bit interleaved code modulation (BICM) to the LDPC coded data values to generate BICM coded data values. Other embodiments may be described and claimed.

Abstract: Embodiments of the present invention provide channel estimation for multi-level memories using pilot signals. A memory apparatus includes a memory block comprising a plurality of memory cells and adapted to operate with at least two levels of signals for writing data into and reading data from the memory cells. At least two memory cells are employed as reference cells to output a plurality of pilot signals. The memory apparatus also includes a channel block operatively coupled to the memory block, and adapted to facilitate the writing and reading of data into and from the memory cells. The channel block is also adapted to receive the pilot signals and determine one or more disturbance parameters based at least in part on the pilot signals and to compensate the read back signals based at least in part on the determined one or more disturbance parameters during said reading of data from the memory cells. Other embodiments may be described and claimed.