Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Abstract: A wafer, electronic component and method are disclosed. In one example, the wafer comprises an array of a plurality of electronic components. The separation frame separating neighboured electronic components, wherein the separation frame comprises a laser penetration affecting structure configured for locally affecting laser penetration when subjecting the separation frame to laser processing during stealth dicing.

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Abstract: An apparatus for expanding chips of a wafer, wherein the apparatus comprises an expansion mechanism configured for expanding a tape on which the chips of the wafer are arranged, and an inflation mechanism configured for inflating at least a part of an edge portion of the tape so that part of the edge portion approaches a frame.

Abstract: According to various embodiments, a method for processing a carrier may include: forming an arrangement of defects in the carrier, wherein a surface region of the carrier is disposed over the arrangement of defects at a first surface of the carrier, wherein the arrangement of defects is configured to generate a crack structure extending from the arrangement of defects into the surface region; partially removing the carrier to remove the arrangement of defects; and separating the surface region of the carrier into a plurality of surface region portions along the crack structure.

Abstract: A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Abstract: Various embodiments provide a method of detaching semiconductor material from a carrier, wherein the method comprises providing a carrier having attached thereto a layer of semiconductor material, wherein the layer comprises an edge portion; and guiding an air stream onto the edge portion of the layer of semiconductor material.

Abstract: An integrated circuit includes a leadframe, and a die having a top surface, a bottom surface, and a plurality of perimeter sides and including at least one magnetic field sensor element disposed proximate to the top surface, wherein the bottom surface is bonded to the leadframe. A molded magnetic material encapsulates the die and at least a portion of the leadframe, and provides a magnetic field substantially perpendicular to the top surface of the die. A non-magnetic material is disposed between the die and the molded magnetic material at least along perimeter sides of the die intersecting a lateral magnetic field component which is parallel to the top surface of the die.

Abstract: According to various embodiments, a method for processing a carrier may include: forming an arrangement of defects in the carrier, wherein a surface region of the carrier is disposed over the arrangement of defects at a first surface of the carrier, wherein the arrangement of defects is configured to generate a crack structure extending from the arrangement of defects into the surface region; partially removing the carrier to remove the arrangement of defects; and separating the surface region of the carrier into a plurality of surface region portions along the crack structure.

Abstract: A manufacturing method is provided which comprises forming recesses in a front side of a wafer, connecting a first temporary holding body to the front side of the recessed wafer, thereafter thinning the wafer from a back side, connecting a second temporary holding body to the back side, and thereafter removing the first temporary holding body.

Abstract: Methods and apparatuses are provided where a parting agent is applied to at least one portion of a substrate. The at least one portion of the substrate is removed from a carrier.

Abstract: A method of removing a reinforcement ring from a wafer is described. The method includes forming a ring-shaped recess in a first surface of the wafer and separating the reinforcement ring from an inner region of the wafer along the ring-shaped recess.

Abstract: A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Abstract: An apparatus for expanding chips of a wafer, wherein the apparatus comprises an expansion mechanism configured for expanding a tape on which the chips of the wafer are arranged, and an inflation mechanism configured for inflating at least a part of an edge portion of the tape so that part of the edge portion approaches a frame.

Abstract: A method of removing a reinforcement ring from a wafer is described. The method includes forming a ring-shaped recess in a first surface of the wafer and separating the reinforcement ring from an inner region of the wafer along the ring-shaped recess.

Abstract: Various embodiments provide a method of detaching semiconductor material from a carrier, wherein the method comprises providing a carrier having attached thereto a layer of semiconductor material, wherein the layer comprises an edge portion; and guiding an air stream onto the edge portion of the layer of semiconductor material.

Abstract: A device includes a semiconductor chip including a dicing edge. The device further includes an active structure arranged in a semiconductor material of the semiconductor chip, and a protection structure arranged between the dicing edge and the active structure.

Abstract: A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.