Abstract: Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.

Abstract: An apparatus for producing an object by additive manufacturing including a chamber for receiving a bath of material solidified by exposure to electromagnetic radiation, a support for positioning the object, and a solidifying device for solidifying a layer of the material. A registering device registers a characteristic of a calibration area related to the surface level of the bath of material and a control unit utilizes the characteristic to control the position of the emitted electromagnetic radiation.

Abstract: An apparatus for producing an object by additive manufacturing including a process chamber for receiving a bath of material configured to be solidified, wherein a surface level of the bath of material defines an object working area. A support positions an object to be produced in relation to the surface level. A plurality of solidifying devices are configured to solidify a selective part of the bath of material and operate in substantially the entire object working area. A controller individually controls each of the plurality of solidifying devices such that each device can operate on in a different part of the object working area. A method for producing an object using the apparatus.

Abstract: A correction mask for an optical beam homogenizer includes a lens array. The correction mask is configured to provide a shaped initial beam profile. A subset of a plurality of optical paths between the incoming light beam and the illumination plane is at least partially blocked by the correction mask to provide a further homogenized beam profile having a further reduced light intensity variance with respect to an initial homogenized beam profile. The mask includes a plurality of submasks arranged according to a mask grid layout matching the lens grid layout of the lens array. Each one of the submasks is designed with a specific submask pattern to shape the respective subarea of the initial beam profile passing a specific one of the lenslets.

Abstract: A correction mask for an optical beam homogenizer includes a lens array. The correction mask is configured to provide a shaped initial beam profile. A subset of a plurality of optical paths between the incoming light beam and the illumination plane is at least partially blocked by the correction mask to provide a further homogenized beam profile having a further reduced light intensity variance with respect to an initial homogenized beam profile. The mask includes a plurality of submasks arranged according to a mask grid layout matching the lens grid layout of the lens array. Each one of the submasks is designed with a specific submask pattern to shape the respective subarea of the initial beam profile passing a specific one of the lenslets.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: A lithographic apparatus (10) and method for preventing exposure of a peripheral portion (P) of a substrate (S). An edge mask (M) has a radial concave edge (E) that extends over less than half a circle arch. The edge mask (M) is connected to a mask carrier (4) that circumnavigates the projection system (2) to adjust a tangential coordinate (?) and a radial coordinate (R) of the edge mask (M) with respect to the optical axis (A) of the projection system (2) for inserting the edge mask (M) at a variable distance into the beam of radiation (B). The tangential and radial positions (?,R) of the edge mask (M) are coordinated with a changing position (X,Y) of the substrate (S) to prevent exposure of the peripheral portion (P) of the substrate (S) during exposure of the target region (T).

Abstract: A lithographic apparatus (10) and method for preventing exposure of a peripheral portion (P) of a substrate (S). An edge mask (M) has a radial concave edge (E) that extends over less than half a circle arch. The edge mask (M) is connected to a mask carrier (4) that circumnavigates the projection system (2) to adjust a tangential coordinate (?) and a radial coordinate (R) of the edge mask (M) with respect to the optical axis (A) of the projection system (2) for inserting the edge mask (M) at a variable distance into the beam of radiation (B). The tangential and radial positions (?,R) of the edge mask (M) are coordinated with a changing position (X,Y) of the substrate (S) to prevent exposure of the peripheral portion (P) of the substrate (S) during exposure of the target region (T).

Abstract: An apparatus for producing an object by additive manufacturing including a chamber for receiving a bath of material solidified by exposure to electromagnetic radiation, a support for positioning the object, and a solidifying device for solidifying a layer of the material. A registering device registers a characteristic of a calibration area related to the surface level of the bath of material and a control unit utilizes the characteristic to control the position of the emitted electromagnetic radiation.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; moving the substrate and the hovering processing head relative to each other; applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: An injector head for atomic layer deposition on a substrate, comprising a plurality of bars coupled to a connection unit. The bars have side walls with a spacer profile, respectively stacked against side walls of a neighbouring bar to form a plurality of stacked bars. The bars comprise slots extending over a length of the bar in communication with a respective slot in the connection unit. A flow path is defined through the bar with a relatively low friction factor to form a respective precursor drain; reactant drain or barrier gas drain. The spacer profiles define slits extending between adjacent bars in communication with a respective slot in the connection unit. A further flow path is formed along the bar with a relatively high friction factor, to form a respective precursor gas supply; reactant gas supply or flow barrier.

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.

Abstract: A stacked substrate is produced using an apparatus including an injector head device. Production includes the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas against opposite substrate surfaces, to balance the substrate without support in a conveying plane in the injector head device. The following steps are performed iteratively: contacting opposite substrate surfaces with a first precursor gas; and with a second precursor gas, first and second precursor gases supplied in first and second deposition spaces are arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane; and providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface.

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.