Patents by Inventor Adrien Gasse

Adrien Gasse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210391497
    Abstract: An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 16, 2021
    Inventors: Badhise BEN BAKIR, Adrien GASSE, Gilles LE BLEVENNEC, Nicolas OLIVIER
  • Patent number: 11165005
    Abstract: The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: November 2, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien Gasse, David Henry, Bertrand Chambion
  • Publication number: 20210313499
    Abstract: Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.
    Type: Application
    Filed: April 2, 2021
    Publication date: October 7, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien GASSE, Ludovic DUPRE, Marianne CONSONNI
  • Patent number: 11094742
    Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: August 17, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien Gasse, Ludovic Dupre, Marion Volpert
  • Patent number: 11049762
    Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electrically-insulating trenches. Each trench includes at least first and second insulating portions made of a first insulating material, extending from the first surface to the second surface, first and second intermediate portions, extending from the first surface to the second surface, made of a first filling material, and a third insulating portion extending from the first surface to the second surface, the first insulating portion being in contact with the first intermediate portion, the second insulating portion being in contact with the second intermediate portion, and the third insulating portion being interposed between the intermediate portions.
    Type: Grant
    Filed: November 23, 2017
    Date of Patent: June 29, 2021
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Adrien Gasse, Sylvie Jarjayes, Marion Volpert
  • Publication number: 20210184078
    Abstract: Method for producing a patterned layer of material, comprising; producing a first substrate having a patterned face; producing, against the patterned face of the first substrate, a stack of layers comprising an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate; removing the first substrate; anisotropic etching the intermediate layer from the first face of the intermediate layer, and etching at least part of the thickness of the layer to be patterned, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.
    Type: Application
    Filed: December 2, 2020
    Publication date: June 17, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien GASSE, Amélie DUSSAIGNE, François LEVY
  • Patent number: 10998559
    Abstract: An electrical power supply device in an aircraft, the device including an enclosure, the enclosure containing at least: a fuel cell; a dihydrogen generator; a gas feed circuit connecting the dihydrogen generator to the anode of the fuel cell; an oxygen feed device feeding the cathode of the fuel cell; and a cooling circuit of the fuel cell associated with at least one heat exchanger; wherein the enclosure is mounted on an actuator system, the actuator system being configured to move the enclosure from a first position in which the enclosure is housed inside an outer wall of the aircraft, to a second position in which the enclosure projects from the outer wall.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: May 4, 2021
    Assignee: SAFRAN POWER UNITS
    Inventors: Fabien Boudjemaa, Adrien Gasse, Matthieu Baron, Denis Real
  • Publication number: 20210028056
    Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electric insulation trenches. Each trench separates first and second portions of the substrate and includes electrically-insulating walls made of a first electrically-insulating material, extending from the first surface to the second surface, and a core made of a filling material, separated from the substrate by the walls. For at least one of the trenches, the trench walls include electrically-insulating portions made of the first electrically-insulating material protruding from the first or second surface outside of the substrate and/or the trench includes an electrically-insulating wall made of the first electrical-insulating material protruding from the first or second surface outside of the substrate and coupling the trench walls.
    Type: Application
    Filed: September 12, 2018
    Publication date: January 28, 2021
    Applicants: Commissariat à I'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Adrien Gasse, Vincent Beix, Sylvie Jaryayes, Brigitte Soulier, Marion Volpert
  • Publication number: 20200343296
    Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.
    Type: Application
    Filed: April 17, 2020
    Publication date: October 29, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien GASSE, Ludovic DUPRE, Marion VOLPERT
  • Publication number: 20200058837
    Abstract: The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.
    Type: Application
    Filed: October 16, 2017
    Publication date: February 20, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien GASSE, David HENRY, Bertrand CHAMBION
  • Publication number: 20200035864
    Abstract: The invention relates to a light-emitting device (100) comprising: at least one light-emitting structure (110) comprising a first side and a second side that are essentially parallel; a first electrode (160, 170) making contact, via a contact area, with either one of the first and second sides, the device being characterized in that the first electrode (160, 170) is shaped so as to cause a decrease in, from a first region and in the direction of at least one second region of the contact area, a current density that is liable to flow through the light-emitting structure (110).
    Type: Application
    Filed: December 18, 2017
    Publication date: January 30, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Bertrand CHAMBION, Adrien GASSE, Marion VOLPERT
  • Publication number: 20190393075
    Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electrically-insulating trenches. Each trench includes at least first and second insulating portions made of a first insulating material, extending from the first surface to the second surface, first and second intermediate portions, extending from the first surface to the second surface, made of a first filling material, and a third insulating portion extending from the first surface to the second surface, the first insulating portion being in contact with the first intermediate portion, the second insulating portion being in contact with the second intermediate portion, and the third insulating portion being interposed between the intermediate portions.
    Type: Application
    Filed: November 23, 2017
    Publication date: December 26, 2019
    Applicant: Commissariat a I'Énergie Atomique et aux Énergies Alternatives
    Inventors: Adrien Gasse, Sylvie Jarjayes, Marion Volpert
  • Publication number: 20190252696
    Abstract: An electrical power supply device in an aircraft, the device including an enclosure, the enclosure containing at least: a fuel cell; a dihydrogen generator; a gas feed circuit connecting the dihydrogen generator to the anode of the fuel cell; an oxygen feed device feeding the cathode of the fuel cell; and a cooling circuit of the fuel cell associated with at least one heat exchanger; wherein the enclosure is mounted on an actuator system, the actuator system being configured to move the enclosure from a first position in which the enclosure is housed inside an outer wall of the aircraft, to a second position in which the enclosure projects from the outer wall.
    Type: Application
    Filed: September 12, 2017
    Publication date: August 15, 2019
    Applicant: SAFRAN POWER UNITS
    Inventors: Fabien BOUDJEMAA, Adrien GASSE, Matthieu BARON, Denis REAL
  • Patent number: 10115864
    Abstract: An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: October 30, 2018
    Assignees: Commissariat à l'Éneergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Adrien Gasse, Bernard Andre, Hubert Bono, Xavier Hugon
  • Patent number: 9622382
    Abstract: A heat-sink device intended for at least one electronic component (12), includes: a heat-sink; a substrate (11) for the at least one electronic component (12), said substrate covering the heat-sink; and thermal coupling provided between the substrate and the heat-sink and made from a material different from that of the heat-sink. The heat-sink comprises of a set of independent fins (10), and the thermal-coupling (13) is made from a heat-conductive polymer material and also serve as mechanical coupling between the substrate (11) and the fins (10).
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: April 11, 2017
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Adrien Gasse, Pascal Revirand
  • Publication number: 20170033264
    Abstract: An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.
    Type: Application
    Filed: March 27, 2015
    Publication date: February 2, 2017
    Applicants: Commissariat à I'Énergie Atomique et aux Énergies Alternatives, Aledia
    Inventors: Adrien Gasse, Bernard Andre, Hubert Bono, Xavier Hugon
  • Patent number: 9444010
    Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallizations.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: September 13, 2016
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Bono, Bernard Andre, Adrien Gasse
  • Publication number: 20160155900
    Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallisations.
    Type: Application
    Filed: March 14, 2014
    Publication date: June 2, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Bono, Bernard Andre, Adrien Gasse
  • Patent number: 8921881
    Abstract: A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: December 30, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Adrien Gasse, Francois Levy
  • Patent number: 8866375
    Abstract: A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: October 21, 2014
    Assignee: Commissariat a l' Energie Atomique et aux Energies Alternatives
    Inventors: Adrien Gasse, Yohan Desieres, Francois Levy