Abstract: A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.

Abstract: A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.

Abstract: A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarizing material; the formation, on the planarizing material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarizing material, stopped so as to preserve planarizing material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarizing material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

Abstract: The present invention relates to a heat-sink device intended for at least one electronic component (12), including: heat-sink means; a substrate (11) for the at least one electronic component (12), said substrate covering the heat-sink means; and thermal coupling means provided between the substrate and the heat-sink means and made from a material different from that of the heat-sink means. According to the invention, the heat-sink means consist of a set of independent fins (10), and the thermal-coupling means (13) are made from a heat-conductive polymer material and also serve as mechanical coupling means between the substrate (11) and the fins (10).

Abstract: A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.

Abstract: A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarising material; the formation, on the planarising material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarising material, stopped so as to preserve planarising material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarising material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

Abstract: The invention relates to a composite polymer material comprising an adhesive resin matrix and an electrically-conductive filler that consists of an oligoaniline in an electrically-conductive form comprising from 4 to 30 repeat units and present in an amount ranging from 15 to 40% by weight relative to the total weight of the material, said material having a resistivity ranging from 105 to 107 ?.cm.

Abstract: This device for detecting electromagnetic radiation, in particular X-ray or ?-rays, includes: a sensing layer consisting of at least one material capable of interacting with said electromagnetic radiation to be detected, in order to liberate mobile charge carriers, whereof the movement generates an electric current; a substrate provided with a plurality of elementary collectors of the charge carriers thus liberated, said elementary collectors being distributed discretely; a transfer layer suitable for transferring the charge carriers liberated by the sensing layer at the elementary collectors, said layer being connected to the sensing layer; and an insulating adhesive mating layer, suitable for mating the plurality of elementary collectors and the transfer layer.

Abstract: The arrays of independently-addressable resistors are commonly used to control miniature elements. The invention proposes solving the problem caused by the loss of power dissipated in the addressed resistor by choosing, for this resistor, a material with a negative thermal coefficient resistance, which enables the addressing output of this resistor to be increased.

Abstract: This device for detecting electromagnetic radiation, in particular X-ray or ?-rays, includes: a sensing layer consisting of at least one material capable of interacting with said electromagnetic radiation to be detected, in order to liberate mobile charge carriers, whereof the movement generates an electric current; a substrate provided with a plurality of elementary collectors of the charge carriers thus liberated, said elementary collectors being distributed discretely; a transfer layer suitable for transferring the charge carriers liberated by the sensing layer at the elementary collectors, said layer being connected to the sensing layer; and an insulating adhesive mating layer, suitable for mating the plurality of elementary collectors and the transfer layer.

Abstract: The invention relates to a composite polymer material comprising an adhesive resin matrix and an electrically-conductive filler that consists of an oligoaniline in an electrically-conductive form comprising from 4 to 30 repeat units and present in an amount ranging from 15 to 40% by weight relative to the total weight of the material, said material having a resistivity ranging from 105 to 107 ?.cm.

Abstract: Method for assembling at least two pieces of silicon carbide based materials by non reactive refractory brazing, wherein these pieces are put into contact with a non reactive brazing solder composition and the assembly formed by the pieces and the brazing solder composition is heated to a brazing temperature sufficient to fuse the brazing solder composition in order to form a refractory joint, in which the non reactive brazing solder composition is constituted, in atomic percentages, of from 40 to 97% silicon and of from 60 to 3% of another element chosen in the group consisting of chromium, rhenium, vanadium, ruthenium, iridium, rhodium, palladium, cobalt, platinum, cerium and zirconium and wherein, before brazing, a strengthening agent of SiC and/or C is added. Brazing solder composition, composition for refractory brazing. Refractory joint and assembly obtained by the method.

Abstract: The arrays of independently-addressable resistors are commonly used to control miniature elements. The invention proposes solving the problem caused by the loss of power dissipated in the addressed resistor by choosing, for this resistor, a material with a negative thermal coefficient resistance, which enables the addressing output of this resistor to be increased. A production method is also described.

Abstract: A protective layer (7) formed of a metal or metal alloy capable of absorbing considerable thermomechanical deformations without causing fissures to appear is described for energy storage systems. In particular, the metal or the metal alloy has an expansion coefficient less than 6.10?6 ° C.?1. The protective layer may be associated with a second layer (6) in insulating ceramic. A deposition method is described. Said protection is principally advantageous for microbatteries (10), the constituents of which are reactive to air.

Abstract: A refractory braze composition and process for assembling alumina-containing parts to another alumina-based material, metal or a metal alloy by reactive or non-reactive refractory brazing using a braze composition provide assemblies entirely of alumina or containing alumina and a metal or metal alloy. The braze composition is non-reactive with alumina or a reactive composition, whose reactivity with alumina is controlled, and it is formed of aluminium, of titanium, and of a matrix made up either of palladium, or of nickel, or of a nickel and palladium alloy.

Abstract: Method for assembling at least two pieces of silicon carbide based materials by non reactive refractory brazing, wherein these pieces are put into contact with a non reactive brazing solder composition and the assembly formed by the pieces and the brazing solder composition is heated to a brazing temperature sufficient to fuse the brazing solder composition in order to form a refractory joint, in which the non reactive brazing solder composition is constituted, in atomic percentages, of from 40 to 97% silicon and of from 60 to 3% of another element chosen in the group consisting of chromium, rhenium, vanadium, ruthenium, iridium, rhodium, palladium, cobalt, platinum, cerium and zirconium and wherein, before brazing, a strengthening agent of SiC and/or C is added.

Abstract: A method for covering a part made of silicon carbide material, wherein a coating compound is applied to at least one surface of said part and the assembly formed by the part and the coating compound is heated to a temperature sufficient to cause the surface of the coating compound to melt in order to coat said piece with a deposit of silicon carbide material and, wherein the coating compound is a non-reactive composition comprised of, in atomic percentages, from 40 to 97% silicon and 60 to 3% of another element selected from among chrome, rhenium, titanium, vanadium, ruthenium, iridium, rhodium, palladium, cobalt, platinum, cerium and zirconium and, wherein prior to heating, a SiC and/or C reinforcement is added.

Abstract: The present invention relates to a method of joining at least two parts of silicon carbide based material by refractory brazing in which these parts are brought into contact with an intermetallic braze alloy and said parts and braze alloy are heated to a braze temperature equivalent to the melting temperature of the braze alloy in order to form a refractory joint characterized in that the intermetallic braze alloy comprises 1 to 18% by weight of cobalt and from 82 to 99% by weight of silicon, and in that the joint obtained is a thick joint, that is to say with a thickness of generally from 0.1 to 0.5 mm. The invention also relates to a thick, refractory joint obtained by this method. Bonds of silicon carbide parts with thick joints prepared using the method of the invention allow the production with great precision of structures, apparatus and components with complex shapes having high temperatures of use reaching as high as 1000° C. and even higher.

Abstract: A method of joining at least two parts in silicon carbide based material by refractory brazing in which these parts are brought into contact with an intermetallic braze alloy and said parts and braze alloy are heated to a braze temperature equivalent to the melting temperature of the braze alloy in order to form a refractory joint characterized in that the intermetallic braze alloy comprises 1 to 18% by weight of cobalt and from 82 to 99% by weight of silicon, and in that the joint obtained is a thick joint, that is to say with a thickness of generally from 0.1 to 0.5 mm, and a thick refractory joint obtained by this method, wherein bonds of silicon carbide parts with thick joints prepared using the method of the invention allow the production with great precision of structures, apparatus and components with complex shapes having high temperatures of use reaching as high as 1000.degree. C. and even higher.