Patents by Inventor Aidi ZHANG

Aidi ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220392929
    Abstract: Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.
    Type: Application
    Filed: May 7, 2021
    Publication date: December 8, 2022
    Inventor: Aidi ZHANG
  • Publication number: 20220384758
    Abstract: A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.
    Type: Application
    Filed: March 30, 2020
    Publication date: December 1, 2022
    Inventors: Wenhai MEI, Zhenqi ZHANG, Aidi ZHANG
  • Publication number: 20220344605
    Abstract: The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method.
    Type: Application
    Filed: May 12, 2021
    Publication date: October 27, 2022
    Inventor: Aidi ZHANG
  • Publication number: 20220310983
    Abstract: Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.
    Type: Application
    Filed: March 18, 2020
    Publication date: September 29, 2022
    Applicant: BOE Technology Group Co., Ltd.
    Inventors: Wenhai Mei, Zhenqi Zhang, Aidi Zhang, Xiaoyuan Zhang, Haowei Wang
  • Publication number: 20220278291
    Abstract: Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.
    Type: Application
    Filed: February 2, 2021
    Publication date: September 1, 2022
    Inventors: Aidi ZHANG, Yichi ZHANG, Jinglu BAI
  • Patent number: 11316140
    Abstract: A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: April 26, 2022
    Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Aidi Zhang, Zhenqi Zhang
  • Publication number: 20220098051
    Abstract: Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.
    Type: Application
    Filed: September 17, 2021
    Publication date: March 31, 2022
    Inventors: Aidi ZHANG, Yichi ZHANG
  • Publication number: 20220085312
    Abstract: The present disclosure provides a quantum dot light emitting device, a method for preparing the same, and a quantum dot display device. The quantum dot light emitting device includes a first electrode layer, a first functional layer, a light emitting layer, a second functional layer, and a second electrode layer, and the light emitting layer being located on a surface of the first functional layer away from the first electrode layer and including perovskite quantum dots and ligands bonded to the quantum dots. The ligands in the quantum dot light emitting device can form into a network to wrap the quantum dots, which is conducive to keeping the light emitting layer with a better morphology, and reducing damage to the quantum dot structure caused by the solvent in the adjacent functional layers, thereby improving the stability of the light emitting layer and the lifetime of the device.
    Type: Application
    Filed: September 7, 2021
    Publication date: March 17, 2022
    Inventor: Aidi ZHANG
  • Patent number: 11268020
    Abstract: The invention provides a quantum dot particle and a preparation method thereof. The quantum dot particle includes at least one quantum dot core, a first protective layer covering the quantum dot core, and a second protective layer covering the first protective layer, wherein at least one hybrid nanoparticle is dispersed in the second protective layer, and the hybrid nanoparticle is configured to generate a near-field plasmon effect under irradiation of excitation light. The quantum dot particle has a higher fluorescence quantum yield. The invention also provides a photoluminescence device containing the quantum dot particle.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: March 8, 2022
    Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Aidi Zhang
  • Publication number: 20220064523
    Abstract: The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.
    Type: Application
    Filed: March 26, 2021
    Publication date: March 3, 2022
    Inventor: Aidi ZHANG
  • Patent number: 11258028
    Abstract: The present disclosure provides a quantum dot device baseplate, a manufacture method therefor and a quantum dot device. The quantum dot device baseplate comprises: a substrate; a cathode disposed on the substrate; an electron transport layer disposed on a surface of the cathode away from the substrate; a linking layer disposed on a surface of the electron transport layer away from the substrate and bonded to the electron transport layer via a chemical bond; and a quantum dot layer disposed on a surface of the linking layer away from the substrate and bonded to the linking layer via a chemical bond.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: February 22, 2022
    Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Aidi Zhang
  • Publication number: 20220025253
    Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.
    Type: Application
    Filed: May 28, 2019
    Publication date: January 27, 2022
    Inventor: Aidi ZHANG
  • Publication number: 20210388259
    Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.
    Type: Application
    Filed: September 11, 2020
    Publication date: December 16, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wenhai MEI, Zhenqi ZHANG, Aidi ZHANG, Xiaoyuan ZHANG, Haowei WANG
  • Publication number: 20210348051
    Abstract: The invention provides a quantum dot particle and a preparation method thereof. The quantum dot particle includes at least one quantum dot core, a first protective layer covering the quantum dot core, and a second protective layer covering the first protective layer, wherein at least one hybrid nanoparticle is dispersed in the second protective layer, and the hybrid nanoparticle is configured to generate a near-field plasmon effect under irradiation of excitation light. The quantum dot particle has a higher fluorescence quantum yield. The invention also provides a photoluminescence device containing the quantum dot particle.
    Type: Application
    Filed: November 19, 2019
    Publication date: November 11, 2021
    Inventor: Aidi ZHANG
  • Publication number: 20210222064
    Abstract: A quantum dot structure and a manufacturing method thereof, an optical film and a manufacturing method thereof, and a display device. The quantum dot structure includes: a quantum dot including a quantum dot body and a quantum dot surface layer; and an oxide layer on a surface of the quantum dot to partly cover the surface of the quantum dot. The quantum dot surface layer includes a negative ion, and the oxide layer is combined with the negative ion through a coordinate bond.
    Type: Application
    Filed: January 18, 2019
    Publication date: July 22, 2021
    Inventor: Aidi ZHANG
  • Publication number: 20210210706
    Abstract: A quantum dot and a manufacturing method thereof, a quantum dot light emitting diode and a display panel are provided. The quantum dot includes: a quantum dot core, a charge transition layer coating at an outer side of the quantum dot core, and a quantum dot shell coating at an outer side of the charge transition layer. The charge transition layer includes a host material and metal ions doped in the host material, the metal ions are metal ions with variable charge valence states, and the charge valence states of the metal ions include a charge valence state of a cation in the quantum dot core and a charge valence state of a cation in the quantum dot shell.
    Type: Application
    Filed: March 11, 2020
    Publication date: July 8, 2021
    Applicants: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Gang YU, Aidi ZHANG
  • Publication number: 20210130683
    Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.
    Type: Application
    Filed: May 28, 2019
    Publication date: May 6, 2021
    Inventor: Aidi ZHANG
  • Publication number: 20210098726
    Abstract: The present disclosure provides a quantum dot device baseplate, a manufacture method therefor and a quantum dot device. The quantum dot device baseplate comprises: a substrate; a cathode disposed on the substrate; an electron transport layer disposed on a surface of the cathode away from the substrate; a linking layer disposed on a surface of the electron transport layer away from the substrate and bonded to the electron transport layer via a chemical bond; and a quantum dot layer disposed on a surface of the linking layer away from the substrate and bonded to the linking layer via a chemical bond.
    Type: Application
    Filed: March 13, 2020
    Publication date: April 1, 2021
    Inventor: Aidi Zhang
  • Publication number: 20210066673
    Abstract: A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.
    Type: Application
    Filed: March 20, 2020
    Publication date: March 4, 2021
    Applicants: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Aidi ZHANG, Zhenqi ZHANG
  • Publication number: 20210057663
    Abstract: The disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes a base substrate; first electrodes on the base substrate; an electron transport layer on a side of the first electrodes away from the base substrate, wherein the electron transport layer is provided with a plurality of pore structures; quantum dot light emitting layers on the side of the electron transport layer away from the base substrate, wherein the electron transport layer is in direct contact with the quantum dot light emitting layers; and a second electrode on the side of the quantum dot light emitting layers away from the base substrate.
    Type: Application
    Filed: March 21, 2020
    Publication date: February 25, 2021
    Inventor: Aidi ZHANG