Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Abstract: A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Abstract: A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Abstract: The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.

Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

Abstract: The embodiments of the present disclosure provides a quantum dot light emitting device, a light emitting layer and a manufacturing method thereof, and a display device. The device includes a perovskite quantum dot layer containing a second halogen element; a siloxane polymer film layer which is provided on a side of the perovskite quantum dot layer containing the second halogen element. The perovskite quantum dot layer containing the second halogen element and the siloxane polymer film layer are connected by a chemical bond.

Abstract: A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

Abstract: A light-emitting substrate, comprising a base, a pixel defining layer arranged on the base, and a plurality of light-emitting devices. The pixel defining layer is provided with a plurality of openings, and each light-emitting device comprises a quantum dot light-emitting pattern arranged in an opening, wherein each opening has a side wall, the side wall comprises a first portion and a second portion, the first portion is the portion of the side wall that is in contact with the quantum dot light-emitting pattern, and the second portion is the portion of the side wall that is away from the base relative to the first portion. The light-emitting substrate further comprises at least one blocking unit, each blocking unit comprises at least one siloxane chain segment, and each siloxane chain segment comprises at least one silicon oxygen bond; and each blocking unit is located in an opening, and at least one siloxane chain segment in each blocking unit is grafted to the second portion of a corresponding side wall.

Abstract: Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.

Abstract: A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Abstract: The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method.

Abstract: Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Abstract: Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.

Abstract: A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.

Abstract: Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.

Abstract: The present disclosure provides a quantum dot light emitting device, a method for preparing the same, and a quantum dot display device. The quantum dot light emitting device includes a first electrode layer, a first functional layer, a light emitting layer, a second functional layer, and a second electrode layer, and the light emitting layer being located on a surface of the first functional layer away from the first electrode layer and including perovskite quantum dots and ligands bonded to the quantum dots. The ligands in the quantum dot light emitting device can form into a network to wrap the quantum dots, which is conducive to keeping the light emitting layer with a better morphology, and reducing damage to the quantum dot structure caused by the solvent in the adjacent functional layers, thereby improving the stability of the light emitting layer and the lifetime of the device.

Abstract: The invention provides a quantum dot particle and a preparation method thereof. The quantum dot particle includes at least one quantum dot core, a first protective layer covering the quantum dot core, and a second protective layer covering the first protective layer, wherein at least one hybrid nanoparticle is dispersed in the second protective layer, and the hybrid nanoparticle is configured to generate a near-field plasmon effect under irradiation of excitation light. The quantum dot particle has a higher fluorescence quantum yield. The invention also provides a photoluminescence device containing the quantum dot particle.

Abstract: The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.

Abstract: The present disclosure provides a quantum dot device baseplate, a manufacture method therefor and a quantum dot device. The quantum dot device baseplate comprises: a substrate; a cathode disposed on the substrate; an electron transport layer disposed on a surface of the cathode away from the substrate; a linking layer disposed on a surface of the electron transport layer away from the substrate and bonded to the electron transport layer via a chemical bond; and a quantum dot layer disposed on a surface of the linking layer away from the substrate and bonded to the linking layer via a chemical bond.

Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.