Abstract: The present disclosure provides a quantum dot light emitting device, a method for preparing the same, and a quantum dot display device. The quantum dot light emitting device includes a first electrode layer, a first functional layer, a light emitting layer, a second functional layer, and a second electrode layer, and the light emitting layer being located on a surface of the first functional layer away from the first electrode layer and including perovskite quantum dots and ligands bonded to the quantum dots. The ligands in the quantum dot light emitting device can form into a network to wrap the quantum dots, which is conducive to keeping the light emitting layer with a better morphology, and reducing damage to the quantum dot structure caused by the solvent in the adjacent functional layers, thereby improving the stability of the light emitting layer and the lifetime of the device.

Abstract: The invention provides a quantum dot particle and a preparation method thereof. The quantum dot particle includes at least one quantum dot core, a first protective layer covering the quantum dot core, and a second protective layer covering the first protective layer, wherein at least one hybrid nanoparticle is dispersed in the second protective layer, and the hybrid nanoparticle is configured to generate a near-field plasmon effect under irradiation of excitation light. The quantum dot particle has a higher fluorescence quantum yield. The invention also provides a photoluminescence device containing the quantum dot particle.

Abstract: The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.

Abstract: The present disclosure provides a quantum dot device baseplate, a manufacture method therefor and a quantum dot device. The quantum dot device baseplate comprises: a substrate; a cathode disposed on the substrate; an electron transport layer disposed on a surface of the cathode away from the substrate; a linking layer disposed on a surface of the electron transport layer away from the substrate and bonded to the electron transport layer via a chemical bond; and a quantum dot layer disposed on a surface of the linking layer away from the substrate and bonded to the linking layer via a chemical bond.

Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Abstract: The invention provides a quantum dot particle and a preparation method thereof. The quantum dot particle includes at least one quantum dot core, a first protective layer covering the quantum dot core, and a second protective layer covering the first protective layer, wherein at least one hybrid nanoparticle is dispersed in the second protective layer, and the hybrid nanoparticle is configured to generate a near-field plasmon effect under irradiation of excitation light. The quantum dot particle has a higher fluorescence quantum yield. The invention also provides a photoluminescence device containing the quantum dot particle.

Abstract: A quantum dot structure and a manufacturing method thereof, an optical film and a manufacturing method thereof, and a display device. The quantum dot structure includes: a quantum dot including a quantum dot body and a quantum dot surface layer; and an oxide layer on a surface of the quantum dot to partly cover the surface of the quantum dot. The quantum dot surface layer includes a negative ion, and the oxide layer is combined with the negative ion through a coordinate bond.

Abstract: A quantum dot and a manufacturing method thereof, a quantum dot light emitting diode and a display panel are provided. The quantum dot includes: a quantum dot core, a charge transition layer coating at an outer side of the quantum dot core, and a quantum dot shell coating at an outer side of the charge transition layer. The charge transition layer includes a host material and metal ions doped in the host material, the metal ions are metal ions with variable charge valence states, and the charge valence states of the metal ions include a charge valence state of a cation in the quantum dot core and a charge valence state of a cation in the quantum dot shell.

Abstract: The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

Abstract: The present disclosure provides a quantum dot device baseplate, a manufacture method therefor and a quantum dot device. The quantum dot device baseplate comprises: a substrate; a cathode disposed on the substrate; an electron transport layer disposed on a surface of the cathode away from the substrate; a linking layer disposed on a surface of the electron transport layer away from the substrate and bonded to the electron transport layer via a chemical bond; and a quantum dot layer disposed on a surface of the linking layer away from the substrate and bonded to the linking layer via a chemical bond.

Abstract: A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.

Abstract: The disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes a base substrate; first electrodes on the base substrate; an electron transport layer on a side of the first electrodes away from the base substrate, wherein the electron transport layer is provided with a plurality of pore structures; quantum dot light emitting layers on the side of the electron transport layer away from the base substrate, wherein the electron transport layer is in direct contact with the quantum dot light emitting layers; and a second electrode on the side of the quantum dot light emitting layers away from the base substrate.