Patents by Inventor Akhlesh Gupta

Akhlesh Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOVOLTAIC DEVICE AND METHODS OF FORMING THE SAME
    Publication number: 20150000733
    Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 1, 2015
    Inventors: Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, Zhibo Zhao
  • Dopant-containing contact material
    Patent number: 8766088
    Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
    Type: Grant
    Filed: June 3, 2010
    Date of Patent: July 1, 2014
    Assignee: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • APPARATUS AND METHOD FOR IMPROVING EFFICIENCY OF THIN-FILM PHOTOVOLTAIC DEVICES
    Publication number: 20130327391
    Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
    Type: Application
    Filed: May 21, 2013
    Publication date: December 12, 2013
    Applicant: FIRST SOLAR, INC
    Inventors: Markus Gloeckler, Akhlesh Gupta, Xilin Peng, Rick C. Powell, Jigish Trivedi, Jianjun Wang, Zhibo Zhao
  • METAL BARRIER-DOPED METAL CONTACT LAYER
    Publication number: 20130005075
    Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 3, 2013
    Inventors: Long Chen, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Photovoltaic devices including Mg-doped semiconductor films
    Patent number: 8334455
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: December 18, 2012
    Assignee: First Solar, Inc.
    Inventors: Akhlesh Gupta, Rick C. Powell, David Eaglesham
  • PHOTOVOLTAIC DEVICE CONDUCTING LAYER
    Publication number: 20110277812
    Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.
    Type: Application
    Filed: May 13, 2011
    Publication date: November 17, 2011
    Inventors: Benyamin Buller, Akhlesh Gupta
  • Photovoltaic device back contact
    Publication number: 20110030776
    Abstract: A photovoltaic device back contact is disclosed. The back contact can include an indium nitride.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 10, 2011
    Inventors: Benyamin Buller, Akhlesh Gupta, Syed Zafar
  • DOPANT-CONTAINING CONTACT MATERIAL
    Publication number: 20100326491
    Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 30, 2010
    Applicant: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • DOPED METAL CONTACT
    Publication number: 20100307561
    Abstract: A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 9, 2010
    Applicant: First Solar, Inc.
    Inventors: Benyamin Buller, Long Cheng, Akhlesh Gupta, Anke Abken
  • METAL BARRIER-DOPED METAL CONTACT LAYER
    Publication number: 20100307568
    Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 9, 2010
    Applicant: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Photovoltaic Devices Including an Interfacial Layer
    Publication number: 20100282320
    Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.
    Type: Application
    Filed: July 23, 2010
    Publication date: November 11, 2010
    Applicant: First Solar, Inc.
    Inventors: Peter Meyers, Akhlesh Gupta, David Eaglesham
  • Photovoltaic Devices Including Mg-Doped Semiconductor Films
    Publication number: 20100059112
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: July 22, 2009
    Publication date: March 11, 2010
    Applicant: First Solar, Inc.
    Inventors: Akhlesh Gupta, Rick C. Powell, David Eaglesham
  • PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS
    Publication number: 20090194166
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: October 31, 2008
    Publication date: August 6, 2009
    Applicant: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Photovoltaic Devices Including An Interfacial Layer
    Publication number: 20090078318
    Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.
    Type: Application
    Filed: September 24, 2008
    Publication date: March 26, 2009
    Applicant: First Solar, Inc.
    Inventors: Peter Meyers, Akhlesh Gupta, David Eaglesham
  • Method of making diode structures
    Patent number: 7141863
    Abstract: A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: November 28, 2006
    Assignee: University of Toledo
    Inventors: Alvin D. Compaan, Akhlesh Gupta